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    HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

    HIGH FREQUENCY TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH FREQUENCY TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON


    Original     		PDF 2N5943 50dBmVI 40dBmVI 50dBmV)

    BUJ105AB

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching


    Original     		PDF BUJ105AB OT404 BUJ105AB

    4619V

    Abstract: NPN transistor Electronic ballast to92
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.


    Original     		PDF BUJ100B 4619V NPN transistor Electronic ballast to92

    BUT11AI

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control


    Original     		PDF BUT11AI O220AB BUT11AI

    2N3019CSM

    Abstract: No abstract text available
    Text: SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2


    Original     		PDF 2N3019CSM 2N3019CSM

    LCC1

    Abstract: No abstract text available
    Text: SEME 2N2857CSM LAB HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT


    Original     		PDF 2N2857CSM 2N2857CSM" 2N2857CSM 2N2857CSM-JQR-B LCC1

    2n2857 data sheet

    Abstract: vebo 15v sot23 2N2857 2N2857CSM
    Text: SEME 2N2857CSM LAB HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT


    Original     		PDF 2N2857CSM 450MHz 2n2857 data sheet vebo 15v sot23 2N2857 2N2857CSM

    5962F0721805VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC

    ksc3114

    Abstract: No abstract text available
    Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		PDF KSC3114 300MHz ksc3114

    KSC3114

    Abstract: No abstract text available
    Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		PDF KSC3114 300MHz KSC3114

    IC 7476

    Abstract: features of ic 7476 applications IC 7476 of Ic 7476 transistor 076 7476 ic
    Text: 2N2857XCSM HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.02 ± 0.10 (0.04 ± 0.004) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON NPN TRANSISTOR


    Original     		PDF 2N2857XCSM IC 7476 features of ic 7476 applications IC 7476 of Ic 7476 transistor 076 7476 ic

    KSC3114

    Abstract: No abstract text available
    Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		PDF KSC3114 300MHz KSC3114

    KSC3114

    Abstract: No abstract text available
    Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		PDF KSC3114 300MHz KSC3114

    IRGBC40U

    Abstract: D-12
    Text: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC40U O-220AB C-668 IRGBC40U D-12

    c613 TRANSISTOR

    Abstract: transistor c616 transistor c611 IRGP450U transistor c613
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGP450U O-247AC C-616 c613 TRANSISTOR transistor c616 transistor c611 IRGP450U transistor c613

    c679 transistor

    Abstract: C 679 IRGPC30U
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1032 IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGPC30U O-247AC C-680 c679 transistor C 679 IRGPC30U

    D-12

    Abstract: IRGB430U
    Text: Previous Datasheet Index Next Data Sheet PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGB430U O-220AB C-586 D-12 IRGB430U

    C-671

    Abstract: C673 IRGPC20U transistor C670
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1031 IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGPC20U O-247AC C-674 C-671 C673 IRGPC20U transistor C670

    IRGB440U

    Abstract: D-12 C588 C590 transistor irgb440
    Text: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGB440U O-220AB O-220 C-592 IRGB440U D-12 C588 C590 transistor irgb440

    IRGBC30U

    Abstract: D-12
    Text: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC30U O-220AB C-662 IRGBC30U D-12

    IRGPC40U

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGPC40U O-247AC C-686 IRGPC40U

    C578

    Abstract: C576 C-580 D-12 IRGB420U c575
    Text: Previous Datasheet Index Next Data Sheet PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGB420U O-220AB C-580 C578 C576 C-580 D-12 IRGB420U c575

    4733 PNP

    Abstract: No abstract text available
    Text: HFA3046, HFA3096, HFA3127, HFA3128 Semiconductor Datasheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 1-800-4-HARRIS 4733 PNP

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434