Untitled
Abstract: No abstract text available
Text: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON
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2N5943
50dBmVI
40dBmVI
50dBmV)
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BUJ105AB
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
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BUJ105AB
OT404
BUJ105AB
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4619V
Abstract: NPN transistor Electronic ballast to92
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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BUJ100B
4619V
NPN transistor Electronic ballast to92
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BUT11AI
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
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BUT11AI
O220AB
BUT11AI
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2N3019CSM
Abstract: No abstract text available
Text: SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2
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2N3019CSM
2N3019CSM
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LCC1
Abstract: No abstract text available
Text: SEME 2N2857CSM LAB HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT
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2N2857CSM
2N2857CSM"
2N2857CSM
2N2857CSM-JQR-B
LCC1
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2n2857 data sheet
Abstract: vebo 15v sot23 2N2857 2N2857CSM
Text: SEME 2N2857CSM LAB HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT
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2N2857CSM
450MHz
2n2857 data sheet
vebo 15v sot23
2N2857
2N2857CSM
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5962F0721805VXC
Abstract: No abstract text available
Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of
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ISL73096RH,
ISL73127RH,
ISL73128RH,
ISL73096EH,
ISL73127EH,
ISL73128EH
ISL73096,
ISL73127
ISL73128
ISL73096
5962F0721805VXC
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ksc3114
Abstract: No abstract text available
Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor
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KSC3114
300MHz
ksc3114
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KSC3114
Abstract: No abstract text available
Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor
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KSC3114
300MHz
KSC3114
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IC 7476
Abstract: features of ic 7476 applications IC 7476 of Ic 7476 transistor 076 7476 ic
Text: 2N2857XCSM HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.02 ± 0.10 (0.04 ± 0.004) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON NPN TRANSISTOR
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2N2857XCSM
IC 7476
features of ic 7476
applications IC 7476
of Ic 7476
transistor 076
7476 ic
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KSC3114
Abstract: No abstract text available
Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor
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KSC3114
300MHz
KSC3114
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KSC3114
Abstract: No abstract text available
Text: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor
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KSC3114
300MHz
KSC3114
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IRGBC40U
Abstract: D-12
Text: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC40U
O-220AB
C-668
IRGBC40U
D-12
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c613 TRANSISTOR
Abstract: transistor c616 transistor c611 IRGP450U transistor c613
Text: Previous Datasheet Index Next Data Sheet PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGP450U
O-247AC
C-616
c613 TRANSISTOR
transistor c616
transistor c611
IRGP450U
transistor c613
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c679 transistor
Abstract: C 679 IRGPC30U
Text: Previous Datasheet Index Next Data Sheet PD - 9.1032 IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC30U
O-247AC
C-680
c679 transistor
C 679
IRGPC30U
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D-12
Abstract: IRGB430U
Text: Previous Datasheet Index Next Data Sheet PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB430U
O-220AB
C-586
D-12
IRGB430U
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C-671
Abstract: C673 IRGPC20U transistor C670
Text: Previous Datasheet Index Next Data Sheet PD - 9.1031 IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC20U
O-247AC
C-674
C-671
C673
IRGPC20U
transistor C670
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IRGB440U
Abstract: D-12 C588 C590 transistor irgb440
Text: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB440U
O-220AB
O-220
C-592
IRGB440U
D-12
C588
C590 transistor
irgb440
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IRGBC30U
Abstract: D-12
Text: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC30U
O-220AB
C-662
IRGBC30U
D-12
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IRGPC40U
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC40U
O-247AC
C-686
IRGPC40U
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C578
Abstract: C576 C-580 D-12 IRGB420U c575
Text: Previous Datasheet Index Next Data Sheet PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB420U
O-220AB
C-580
C578
C576
C-580
D-12
IRGB420U
c575
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4733 PNP
Abstract: No abstract text available
Text: HFA3046, HFA3096, HFA3127, HFA3128 Semiconductor Datasheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
1-800-4-HARRIS
4733 PNP
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CD 1691 CB
Abstract: NEC 7924 NEC D 986 IC - 7434
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •
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2SC5013
2SC5013-T1
2SC5013-T2
CD 1691 CB
NEC 7924
NEC D 986
IC - 7434
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