Untitled
Abstract: No abstract text available
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
24GHz
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2SC945
Abstract: 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage:
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2SC945
2SC945
150mA
2SA733
2SC945L
2SC945G
2SC945-x-T92-B
2SC945-x-T92-K
2SC945L-x-T92-B
2SC945L-x-T92-K
2SC945L
2SC945G
transistor 2sc945
2SC945 transistor
2SC945 DATASHEET
2Sc945 equivalent
2sC945 npn transistor
2SC945 Q equivalent
2SC945 R
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mmbt945
Abstract: MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage:
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MMBT945
MMBT945
150mA
MMBT733
MMBT945L
MMBT945G
MMBT945-x-AE3-R
MMBT945-x-AL3-R
MMBT945L-x-AE3-R
MMBT945G-x-AE3-R
MMBT733
audio output TRANSISTOR NPN
BVCBO-50V
Amplifier Transistor NPN 40V 100mA
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FPD7612P70
Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
24GHz
11GHz)
0805-X7R
HEMT marking P
1005FHL
InP HBT transistor low noise
pseudomorphic HEMT
rogers 4003
InP transistor HEMT
DS090629
ATC0805X7R
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2SC945
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage:
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2SC945
2SC945
150mA
2SA733
2SC945L-x-T92-B
2SC945G-x-T92-B
2SC945L-x-T92-K
2SC945G-x-T92-K
QW-R201-005
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mmbt945
Abstract: MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter Voltage:
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MMBT945
MMBT945
150mA
MMBT733
MMBT945G-x-AE3-R
MMBT945G-x-AL3-R
OT-23
OT-323
QW-R206-094
MMBT733
audio output TRANSISTOR NPN
094B
BVCBO-50V
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FPD6836P70
Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.
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FPD6836P70
FPD6836P70
22dBm
18GHz
11GHz)
18GHz)
FPD6836P70-AG
FPD6836P70-AJ
FPD6836P70SQ
FPD6836P70SR
mrs 317
36P7
LL1005FHL
0805X7R
BC 945 transistor
PHEMT marking code B
fpd6836p
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FPD6836P70
Abstract: No abstract text available
Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.
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FPD6836P70
FPD6836P70
22dBm
18GHz
FPD6836P70-AG
FPD6836P70-AJ
FPD6836P70SQ
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2sc945
Abstract: 2SC945L 2SC945 R
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:
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2SC945
2SC945
150mA
2SA733
2SC945L
2SC945-x-T92-B
2SC945L-x-T92-B
2SC945-x-T92-K
2SC945L-x-T92-K
2SC945L
2SC945 R
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2SK709
Abstract: No abstract text available
Text: 2SK709 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK709 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)
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2SK709
2SK709
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2SK711
Abstract: No abstract text available
Text: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)
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2SK711
O-236MOD
SC-59
2SK711
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TRANSISTOR BL 100
Abstract: 2SK710
Text: 2SK710 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK710 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)
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2SK710
TRANSISTOR BL 100
2SK710
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2SK710
Abstract: No abstract text available
Text: 2SK710 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK710 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)
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2SK710
2SK710
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2SK709
Abstract: high frequency amplifier BL1020 2SK70
Text: 2SK709 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK709 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)
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2SK709
2SK709
high frequency amplifier
BL1020
2SK70
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Untitled
Abstract: No abstract text available
Text: 2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)
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2SK1875
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BL1020
Abstract: 2SK711
Text: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)
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2SK711
O-236MOD
SC-59
BL1020
2SK711
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Untitled
Abstract: No abstract text available
Text: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)
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2SK711
O-236MOD
SC-59
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2SK711
Abstract: No abstract text available
Text: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)
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2SK711
O-236MOD
2SK711
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.
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2SK709
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1J27
Abstract: 2SK70 2SK709
Text: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.
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2SK709
SC-43
1J27
2SK70
2SK709
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2SK709
Abstract: No abstract text available
Text: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.
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2SK709
SC-43
2SK709
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2SK710
Abstract: No abstract text available
Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK710 U nit HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • High |Yfs| : |Yfs| = 25mS Typ. Low Ciss : Ciss = 7.5pF (Typ.)
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2SK710
2SK710
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SMD M1A
Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Text: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun
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OT-23
OT-23
BF536
BF550
BF569
BF579
BF660
BF747
BF767
BF824
SMD M1A
marking g3p
marking L2 SOT23 6
m1a smd
smd marking code m1a
L2 SOT23
smd transistors
smd code marking sot23
smd transistors code
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK711 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL JUNCTION TYPE <; K 7m mm • 1 m 1m HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. High |YfJ : IYfg| = 25mS Typ.
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2SK711
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