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    HIGH CURRENT SOT-363 P-CHANNEL MOSFET Search Results

    HIGH CURRENT SOT-363 P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH CURRENT SOT-363 P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package PDF

    NTJS3151P

    Abstract: NTJS3151PT1 NTJS3151PT1G
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		NTJS3151P SC-88 SC-88 SC70-6 NTJS3151P/D NTJS3151P NTJS3151PT1 NTJS3151PT1G PDF

    NTJS4151P

    Abstract: NTJS4151PT1 NTJS4151PT1G
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		NTJS4151P SC-88 SC-88 SC-70-6 NTJS4151P/D NTJS4151P NTJS4151PT1 NTJS4151PT1G PDF

    NTJD1155LT1

    Abstract: NTJD1155L NTJD1155LT1G
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		NTJD1155L SC-88 NTJD1155L NTJD1155L/D NTJD1155LT1 NTJD1155LT1G PDF

    NTJD1155L

    Abstract: NTJD1155LT1 NTJD1155LT1G
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		NTJD1155L SC-88 NTJD1155L NTJD1155L/D NTJD1155LT1 NTJD1155LT1G PDF

    NTJD1155LT1G

    Abstract: NTJD1155L NTJD1155LT1
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		NTJD1155L SC-88 NTJD1155L/D NTJD1155LT1G NTJD1155LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		NTJD1155L NTJD1155L NTJD1155L/D PDF

    Load Switch SOT-363

    Abstract: sot-363 n-channel mosfet MOSFET ESD Rated P CHANNEL POWER MOSFET NTJD1155L NTJD1155LT1G marking 52N sot363 TE SC88 NTJD1155LT1 p mosfet
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		NTJD1155L SC-88 NTJD1155L NTJD1155L/D Load Switch SOT-363 sot-363 n-channel mosfet MOSFET ESD Rated P CHANNEL POWER MOSFET NTJD1155LT1G marking 52N sot363 TE SC88 NTJD1155LT1 p mosfet PDF

    NTJD1155L

    Abstract: No abstract text available
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		NTJD1155L SC-88 NTJD1155L/D PDF

    F 5M 365 R

    Abstract: 5M 365 R SOT23 MARKING N02 n02 mosfet 948S
    Text: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits


    Original     		NTUD01N02 88/SOTU F 5M 365 R 5M 365 R SOT23 MARKING N02 n02 mosfet 948S PDF

    sot-363 702

    Abstract: No abstract text available
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		NTJS3151P SC-88 SC-88 SC70-6 sot-363 702 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		NTJS4151P SC-88 SC-88 SC-70-6 PDF

    c6067

    Abstract: NTJS3151PT1G NTJS3151P NTJS3151PT1 NTJS3151PT2 NTJS3151PT2G P-Channel mosfet sot-363 102 marking
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		NTJS3151P SC-88 SC-88 SC70-6 OT-363) NTJS3151P/D c6067 NTJS3151PT1G NTJS3151P NTJS3151PT1 NTJS3151PT2 NTJS3151PT2G P-Channel mosfet sot-363 102 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		NTJS3151P SC-88 SC-88 SC70-6 NTJS3151P/D PDF

    NTJS4151P

    Abstract: NTJS4151PT1 NTJS4151PT1G
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 • Gate Diodes for ESD Protection


    Original     		NTJS4151P SC-88 SC-88 SC-70-6 OT-363) NTJS4151P/D NTJS4151P NTJS4151PT1 NTJS4151PT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 http://onsemi.com


    Original     		NTJS4151P NTJS4151P/D PDF

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F PDF

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.3 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board http://onsemi.com Utilization, Same as SC−70−6


    Original     		NVJS4151P NVJS4151P/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		NTJS4151P NTJFS4151P/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		NVJS4151P NVJS4151P/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P, NVJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		NTJS4151P, NVJS4151P NTJFS4151P/D PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM PDF

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494 PDF