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    HIGH CURRENT POWER SWITCH Search Results

    HIGH CURRENT POWER SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH CURRENT POWER SWITCH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV21 BUV21/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV22 BUV22/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV21 BUV21/D PDF

    BUV22G

    Abstract: BUV22
    Text: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV22 BUV22/D BUV22G BUV22 PDF

    BUV21

    Abstract: BUV21G
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV21 BUV21/D BUV21 BUV21G PDF

    TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED

    Abstract: 2SD1049 SC-65 HIGH CURRENT HIGH SPEED SWITCHING
    Text: 2SD1049 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High current,High speed switching High reliability Applications Switching regulators Motor controls High frequency inverters General purpose power amplifiers


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    2SD1049 TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED 2SD1049 SC-65 HIGH CURRENT HIGH SPEED SWITCHING PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1049 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High current,High speed switching High reliability Applications Switching regulators Motor controls High frequency inverters General purpose power amplifiers


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    2SD1049 SC-65 PDF

    variable power supply circuit

    Abstract: VARIABLE POWER SUPPLY. 0 - 30V a1694
    Text: Data Sheet High Current Switching DC Power Supplies Models 1693 & 1694 High Current at a Low Price B&K Precision models 1693 and 1694 switching mode DC power supplies provide high current output in a lightweight and compact form factor. These 900W power supplies provide a variable


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    v041211 variable power supply circuit VARIABLE POWER SUPPLY. 0 - 30V a1694 PDF

    Untitled

    Abstract: No abstract text available
    Text: HER301 - HER305 VISHAY 3.0A HIGH EFFICIENCY RECTIFIER u t e m ît I/POWER SEHCONNJCTOR/ Features Low Power Loss, High Efficiency Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching High Surge Current Rating High Reliability


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    HER301 HER305 DO-201 MIL-STD-202, DS25003 HER301-HER305 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


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    BUV21 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF

    BU108

    Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A


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    BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent PDF

    AQI-657

    Abstract: C02551 MPF960 IN40P MPF930 MPF990 10m50c
    Text: 1 Advance Information I 2.0 AMPERE N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed speed power switching applications plies, CMOS logic, microprocessor for high-current, such as switching high- power or TTL to high current


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    MPF930 MPF960 MPF990 C02551 AQI-657 C02551 MPF960 IN40P MPF930 MPF990 10m50c PDF

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


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    BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 PDF

    BUV21

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


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    BUV21 r14525 BUV21/D BUV21 PDF

    2N4922

    Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A


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    BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482 PDF

    BUV22 equivalent

    Abstract: BUV22
    Text: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A


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    BUV22 r14525 BUV22/D BUV22 equivalent BUV22 PDF

    BUV11

    Abstract: No abstract text available
    Text: ON Semiconductort BUV11 SWITCHMODEt Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE • • min. = 20 at IC = 6 A


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    BUV11 r14525 BUV11/D BUV11 PDF

    buv22

    Abstract: No abstract text available
    Text: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A


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    BUV22 buv22 PDF

    Untitled

    Abstract: No abstract text available
    Text: HER301 - HER305 3.0A HIGH EFFICIENCY RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Low Power Loss, High Efficiency Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching High Surge Current Rating High Reliability


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    HER301 HER305 MIL-STD-202, DO-201AD DS25003 HER301-HER305 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Current, High Frequency, Power Inductors FLAT-PAC FP1308 Series Applications • Voltage regulator modules VRMs for servers and microprocessors • Multi-phase buck inductors • High frequency, high current switching power supplies Environmental Data


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    FP1308 BU-SB07329 PDF

    2N5672

    Abstract: 2N5671 81TI
    Text: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A


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    2N5671 2N5672 2N5671, 81TI PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power TVansistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hpE min = 20 at lc “ 25 A


    OCR Scan
    BUV20 87A-05 O-204AE PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Ttanslstor 40 AMPERES NPN 8ILICON POWER METAL TRANSISTOR 200 VOLTS 260 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hpE nnin. = 20 at lc » 12 A


    OCR Scan
    BUV21 07A-O6 O-204AE PDF