LC32020
Abstract: LC32016 power mosfet module n-channel 500w power mosfet
Text: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 51.0 57.0 7.0 28.0 10.0 TYP Ø 4.25 2 POSN FEATURES • P - CHANNEL POWER MOSFETS 6.35 TYP • N - CHANNEL POWER MOSFETS • HIGH SPEED SWITCHING
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LC32016
LC32020
LC32016
LC32020
power mosfet module
n-channel 500w power mosfet
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15A POWER TRANSISTOR FOR SMPS
Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
Text: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch
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FAN7031,
FAN7023,
FAN7005
FIN7216-01
FAN7556
FAN7601
FSA3357
QVE00033
Power247TM,
15A POWER TRANSISTOR FOR SMPS
list of n channel power mosfet
FQPF*10n20c
detailed vfd circuit diagram for motor
FAN7601 application data
list of P channel power mosfet
80a charger transformer
dual Phototransistor mouse
FQPF10N20C
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half bridge SMPS
Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET STE36N50-DK smps circuit diagram h bridge ups circuit schematic diagram welding equipment smps schematic transistor da 307 STE36N50-DA STTA2006P FRM 5 N 144 DS
Text: STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA V DSS R DS on ID 500 V < 0.14 Ω 36 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ ■ LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE
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STE36N50-DA
E81743)
half bridge SMPS
SWITCHING WELDING SCHEMATIC BY MOSFET
STE36N50-DK
smps circuit diagram
h bridge ups circuit schematic diagram
welding equipment smps schematic
transistor da 307
STE36N50-DA
STTA2006P
FRM 5 N 144 DS
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pt 4115 led driver
Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
KM4211-PB:
KM4211
FAN5231-PB:
pt 4115 led driver
AN-7527
an7527
an5043
AN-7501
AN-7502
AN42045
transistor k 4110
PC100 NPN
ML4425
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Untitled
Abstract: No abstract text available
Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
900MHz
1800MHz
900mV
MC33170
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ISL6258
Abstract: ISL6258A UC3842 smps design isl6266a schematic diagram 48v ac regulator uc3842 48v 2.5a charger using uc3842 24v dc power supply with uc3842 schematic diagram 48v dc motor speed controller schematic diagram 48v regulator uc3842 uc3842 half bridge
Text: INTERSIL SELECTION GUIDE POWER MANAGEMENT Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors
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1-888-INTERSIL
LC-043
ISL6258
ISL6258A
UC3842 smps design
isl6266a
schematic diagram 48v ac regulator uc3842
48v 2.5a charger using uc3842
24v dc power supply with uc3842
schematic diagram 48v dc motor speed controller
schematic diagram 48v regulator uc3842
uc3842 half bridge
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RF MOSFET MODULE
Abstract: RA30H4047 RA30H4047M RA30H4047M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RF MOSFET MODULE
RA30H4047
RA30H4047M-101
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SI-502A
Abstract: scientific imaging technologies SI-424 SI-502 scientific imaging technologies inc Scientific Imaging Technologies, Inc mpp schematic SI-424A ccd 512 x 512
Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 512 x 512 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV
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SI-502A
SI-502A,
scientific imaging technologies
SI-424
SI-502
scientific imaging technologies inc
Scientific Imaging Technologies, Inc
mpp schematic
SI-424A
ccd 512 x 512
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RA60H131
Abstract: RA60H1317M-101
Text: <Silicon RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the
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RA60H1317M
135-175MHz
RA60H1317M
60-watt
175-MHz
RA60H131
RA60H1317M-101
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the
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RA55H4452M
440-520MHz
RA55H4452M
55-watt
520-MHz
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ra55h3847m
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA55H3847M RoHS Compliance , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to 470-MHz range. The battery can be connected directly to the drain of the
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RA55H3847M
380-470MHz
RA55H3847M
55-watt
470-MHz
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RA30H4047M
Abstract: RA30H4047M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RA30H4047M-101
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA55H3847M RoHS Compliance , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to 470-MHz range. The battery can be connected directly to the drain of the
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RA55H3847M
380-470MHz
RA55H3847M
55-watt
470-MHz
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA55H4047M RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the
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RA55H4047M
400-470MHz
RA55H4047M
55-watt
470-MHz
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schematic diagram UPS
Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Text: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS
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TSD180N1
TSD180N1OV
TSD180N10F/V
C045S0
T-91-20
O-240)
schematic diagram UPS
TSD180N10V
k 815 MOSFET
smps&ups
TSD180N10F
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Untitled
Abstract: No abstract text available
Text: June 1997 Micro Linear ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p f ° r processors such as the Pentium Pro and Pentium
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ML4902
100mV
L4902CT
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2MI50S-050
Abstract: No abstract text available
Text: 2M I50S-050 FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET MOS-FET MODULE • Features lOutline Drawings • Low on-resistance • High current • Insulated to elements and metal base • Separated two-elements ■Applications • High frequency power supplies
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2MI50S-050
2MI50S-050
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MG400H1FL1
Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
Text: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran sistors, voltage between terminals, power dissi pation, junction temperature, storage tempera ture, etc. These characteristics are all closely
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Untitled
Abstract: No abstract text available
Text: ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p for processors such as the Pentium Pro and Pentium II from Intel®.
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ML4902
ML4902
10OmV
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TSD200N05V
Abstract: schematic diagram UPS TSD200N05F smps&ups
Text: JIO E^ D • 7 ^ 2 3 7 J303QbQ0 ''T ^ S ■ TSD200N05F TSD200N05V SGS-THOMSON ItLIKglMKS s "15 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE G s-th o m so n ADVANCE DATA TYPE T S D 200N 05F /V V R dss 50 V d s o i I Id 0.006 n 200 A ■ VERY HIGH DENSITY POWER MOS
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m330bQG
TSD200N05F
TSD200N05V
TSD200N05F/V
T-91-20
O-240)
TSD200N05V
schematic diagram UPS
TSD200N05F
smps&ups
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TSD22N80V
Abstract: TSD22N80F transistor b 1185 STH8N80
Text: 3GE D • 7=12^537 QDBQSTM 3 TSD22N80F TSD22N80V SCS-THOMSON M G»Li D¥iiMa<gS s g s-thom son N _ CHANNEL ENHANCEMENT MODE _POWER MQS TRANSISTOR MODULE ADVANCE DATA TYPE V dss RDS(on Id T S D 22N 80F/V 800 V 0.4 n 22 A ■ HIGH VOLTAGE, HIGH CURRENT POWER
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TSD22N80F
TSD22N80V
TSD22N80F/V
STH8N80
T-91-20
O-240)
TSD22N80V
TSD22N80F
transistor b 1185
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TSD5MG40V
Abstract: STHV102 TSD5MG40F sthv QG30S
Text: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE
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TSD5MG40F
TSD5MG40V
TSD5MG40F/V
STHV102
TSD5MG40V
T-91-20
O-240)
TSD5MG40F
sthv
QG30S
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F7413
Abstract: No abstract text available
Text: June 1997 ^ÉL Micro Linear ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck control ler provides high efficiency DC/DC conversion to generate V c c p for processors such as the Pentium Pro and Pentium
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ML4902
ML4902
10OmV
CA951
F7413
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TSD4M350V
Abstract: T397 TSD4M350F IRFP350 L072A
Text: 3QE T> m 7^5^537 00305b5_l • SGS-THOMSON i L[iOT(s*S s g N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TY P E V d ss RDS(on Id TS D 4M 350F /V 400 V 0.075 n 50 A . . . ■ ■ . « . TSD4M350F TSD4M350V HIGH CURRENT POWER MOS MODULE
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TSD4M350F
TSD4M350V
TSD4M350F/V
IRFP350
TSD4M350V
t-91-20
O-240)
T397
TSD4M350F
L072A
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