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    HIGH CONDUCTANCE LOW LEAKAGE DIODE Search Results

    HIGH CONDUCTANCE LOW LEAKAGE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    HIGH CONDUCTANCE LOW LEAKAGE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N3595 High Conductance Low Leakage Diode. Working Inverse Voltage 125 V. 2.53 D. Page 1 of 1 Enter Your Part # Home Part Number: 1N3595 Online Store 1N3595 Diodes High Conductance Low Leakage Diode. Working Inverse Transistors Voltage 125 V. Integrated Circuits


    Original     		PDF 1N3595 1N3595 DO-35 com/1n3595

    DO-35 PACKAGE

    Abstract: Fairchild 1N3595 1n6099
    Text: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance


    Original     		PDF 1N3595/6099 DO-35 11-MAR-97 DO-35 PACKAGE Fairchild 1N3595 1n6099

    FAIRCHILD DIODE

    Abstract: No abstract text available
    Text: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the


    Original     		PDF FDLL485B LL-34 FAIRCHILD DIODE

    FAIRCHILD DIODE

    Abstract: No abstract text available
    Text: FDLL3595 High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the


    Original     		PDF FDLL3595 LL-34 FAIRCHILD DIODE

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1505A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A15 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit


    Original     		PDF OT-23 OT-23 MMBD1505A 100mA 300mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1501A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A11 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit


    Original     		PDF OT-23 OT-23 MMBD1501A 100mA 300mA 200mA

    CMHD3595

    Abstract: No abstract text available
    Text: Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage.


    Original     		PDF CMHD3595 OD-123 100mA 200mA 31-October CMHD3595

    silicon diode

    Abstract: CLL3595 SOD-80 Marking Code
    Text: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    Original     		PDF CLL3595 OD-80 100mA 200mA 22-August silicon diode CLL3595 SOD-80 Marking Code

    silicon diode

    Abstract: CLL3595
    Text: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    Original     		PDF CLL3595 OD-80 100mA 200mA 25-September silicon diode CLL3595

    CMHD3595

    Abstract: No abstract text available
    Text: Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage.


    Original     		PDF CMHD3595 OD-123 OD-123 CMHD3595

    CLL3595

    Abstract: No abstract text available
    Text: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    Original     		PDF CLL3595 OD-80 100mA 200mA 13-November CLL3595

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1504A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A14 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit


    Original     		PDF OT-23 OT-23 MMBD1504A 100mA 300mA 200mA

    1N3595

    Abstract: diode 1N3595
    Text: 1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: TA=25°C


    Original     		PDF 1N3595 DO-35 1N3595 100mA 200mA DO-35 C1N3595 diode 1N3595

    MMBD1503A

    Abstract: MMBD1503 MMBD1501 MMBD1501A MMBD1504 MMBD1504A MMBD1505 MMBD1505A a14 sot-23 marking a14 sot marking
    Text: MMBD1501 A THRU MMBD1505(A) Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features High Conductance l Low Leakage l Surface Mount Package Ideally Suited for Automatic Insertion Low Leakage Diode o l 150 C Junction Temperature


    Original     		PDF MMBD1501 MMBD1505 350mW OT-23 OT-23, MIL-STD-202, MMBD1501 MMBD1503 MMBD1503A MMBD1503 MMBD1501A MMBD1504 MMBD1504A MMBD1505A a14 sot-23 marking a14 sot marking

    CLL3595

    Abstract: No abstract text available
    Text: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance


    Original     		PDF CLL3595 CLL3595 OD-80 100mA 200mA

    NTE591

    Abstract: NTE590
    Text: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original     		PDF NTE590 NTE591 NTE590) NTE591) 100mA NTE591 NTE590

    NTE590

    Abstract: NTE591 NTE59
    Text: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original     		PDF NTE590 NTE591 NTE590) NTE591) 100mA NTE590 NTE591 NTE59

    Untitled

    Abstract: No abstract text available
    Text: centrai CLL3595 LOW LEAKAGE SILICON DIODE Semiconductor corn. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    OCR Scan     		PDF CLL3595 OD-80 100fiA 100mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: Central" Sem iconductor Corp. CLL3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    OCR Scan     		PDF CLL3595 CLL3595 100mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: Central sem iconductor Corp. CLL3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    OCR Scan     		PDF CLL3595 OD-80 100mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: Central" Semiconductor Corp. C L L3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    OCR Scan     		PDF L3595 CLL3595 100mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: Central' CLL3595 LOW LEAKAGE SILICON DIODE % > Semiconductor Corp. DESCRIPTION: The CENTRAL SEM ICO NDUCTO R CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    OCR Scan     		PDF CLL3595 OD-80 100mA 200mA

    MARKING CODE diode sod123 FS

    Abstract: No abstract text available
    Text: Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance application s req uiring low leakage.


    OCR Scan     		PDF CMHD3595 OD-123 31-October CPD64 OD-123 MARKING CODE diode sod123 FS

    16T MARKING

    Abstract: MARKING J1A CLL3595 silicon diode
    Text: Central" Sem iconductor Corp. C LL3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.


    OCR Scan     		PDF CLL3595 Thermal125V, 100mA 200mA CLL3595 OD-80 16T MARKING MARKING J1A silicon diode