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    HFS10N60S

    Abstract: HFS10N
    Text: BVDSS = 600 V RDS on typ = 0.83 Ω HFS10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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    PDF HFS10N60S O-220F 47max 54typ HFS10N60S HFS10N