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    hfp3n80

    Abstract: No abstract text available
    Text: BVDSS = 800 V RDS on typ = 4.0 Ω HFP3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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    PDF HFP3N80 O-220 54typ hfp3n80