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    HFE-120 NPN Search Results

    HFE-120 NPN Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    HFE-120 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TFSM

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.


    Original     		PDF KTC4074F KTA2013F. 100mA, TFSM

    KTC4074F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.


    Original     		PDF KTC4074F KTA2013F. KTC4074F

    2SC4738FV

    Abstract: MARKING LY toshiba 2SA1832FV
    Text: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV


    Original     		PDF 2SC4738FV 2SA1832FV 2SC4738FV MARKING LY toshiba 2SA1832FV

    HN1B26FS

    Abstract: No abstract text available
    Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 • High hFE : hFE = 120~400 0.35 0.35 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF HN1B26FS HN1B26FS

    2SC2713

    Abstract: 2SA1163
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC2713 2SA1163 2SC2713 2SA1163

    Untitled

    Abstract: No abstract text available
    Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 : hFE = 120~400 6 2 5 3 4 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE


    Original     		PDF HN1B26FS

    2SC2713

    Abstract: 2SA1163
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC2713 2SA1163 2SC2713 2SA1163

    2sc4117

    Abstract: 2SA1587
    Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 200~700


    Original     		PDF 2SC4117 2SA1587 2sc4117 2SA1587

    2Sc2713

    Abstract: 2SA1163
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 200~700


    Original     		PDF 2SC2713 2SA1163 2Sc2713 2SA1163

    Untitled

    Abstract: No abstract text available
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC2713 2SA1163

    KTA2013V

    Abstract: KTA2013 Transistor hFE CLASSIFICATION Marking CE KTC4074V
    Text: SEMICONDUCTOR KTC4074V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 3 K H Low Collector-to-Emitter Saturation Voltage. D 2 High hFE : hFE=120~400.


    Original     		PDF KTC4074V KTA2013V. KTA2013V KTA2013 Transistor hFE CLASSIFICATION Marking CE KTC4074V

    2SA1587

    Abstract: 2SC4117
    Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC4117 2SA1587 2SA1587 2SC4117

    2SC4117

    Abstract: No abstract text available
    Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700


    Original     		PDF 2SC4117 2SA1587 2SC4117

    2SC2713

    Abstract: 2SA1163
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC2713 2SA1163 2SC2713 2SA1163

    Untitled

    Abstract: No abstract text available
    Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC3324 2SA1312

    2SC3324

    Abstract: 2SA1312
    Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) · High hFE: hFE = 200~700


    Original     		PDF 2SC3324 2SA1312 2SC3324 2SA1312

    Untitled

    Abstract: No abstract text available
    Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700


    Original     		PDF 2SC2713 2SA1163

    Untitled

    Abstract: No abstract text available
    Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200 to 700


    Original     		PDF 2SC3324 2SA1312

    Untitled

    Abstract: No abstract text available
    Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC4117 2SA1587

    2SC3324

    Abstract: 2SA1312
    Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		PDF 2SC3324 2SA1312 2SC3324 2SA1312

    2sc4738ft

    Abstract: 2SA1832FT
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738FT 2SA1832FT 2sc4738ft 2SA1832FT

    2sc4738ft

    Abstract: 2SA1832FT IC5010
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738FT 2SA1832FT 2sc4738ft 2SA1832FT IC5010

    Untitled

    Abstract: No abstract text available
    Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC4738FT 2SA1832FT 961001EAA1

    2SA1049

    Abstract: 2SC2459 transistor 2sc2459
    Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF 2SC2459 2SA1049. 2SA1049 2SC2459 transistor 2sc2459