2SA1312
Abstract: No abstract text available
Text: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)
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MMBTSC3324LT1
OT-23
2SA1312
100Hz,
2SA1312
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lowest noise audio NPN
Abstract: 2SA1312 hFE is transistor
Text: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)
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MMBTSC3324LT1
OT-23
2SA1312
100Hz,
lowest noise audio NPN
2SA1312
hFE is transistor
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TRANSISTOR tip41c schematic diagram
Abstract: TRANSISTOR tip41c schematic 0104S TIP41C TIP41CN TIP42C TIP42CN
Text: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n Figure 1: Package COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER
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TIP41CN
TIP42CN
O-220
TIP41CN
O-220
TIP41C
TRANSISTOR tip41c schematic diagram
TRANSISTOR tip41c schematic
0104S
TIP42C
TIP42CN
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TRANSISTOR tip41c schematic diagram
Abstract: TRANSISTOR tip41c schematic tip41c tip42c TIP41C TIP41CN TIP42C TIP42CN 18MAR2005
Text: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY Figure 1: Package APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER
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TIP41CN
TIP42CN
TIP41CN
O-220
TIP41C
TIP42CN.
O-220
TRANSISTOR tip41c schematic diagram
TRANSISTOR tip41c schematic
tip41c tip42c
TIP42C
TIP42CN
18MAR2005
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Untitled
Abstract: No abstract text available
Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA
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MMBTSA1505LT1
-400mA
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA
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MMBTSA1505LT1
-400mA
OT-23
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TIP41CY
Abstract: TIP42CY TIP42C TRANSISTOR tip41c schematic diagram TIP41C tip41c tip42c amplifier TRANSISTOR tip41c schematic TIP42C DIAGRAM tip41c amplifier tip42c amplifier
Text: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching
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TIP41C
TIP42C
O-220
TIP41C
O-220
TIP41CY
TIP42CY
TIP42C
TRANSISTOR tip41c schematic diagram
tip41c tip42c amplifier
TRANSISTOR tip41c schematic
TIP42C DIAGRAM
tip41c amplifier
tip42c amplifier
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TIP41C
Abstract: tip42c tip41c tip42c amplifier tip41c tip42c TRANSISTOR tip41c schematic diagram TÄ°P41C
Text: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching
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TIP41C
TIP42C
O-220
TIP41C
O-220
tip42c
tip41c tip42c amplifier
tip41c tip42c
TRANSISTOR tip41c schematic diagram
TÄ°P41C
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Untitled
Abstract: No abstract text available
Text: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA
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MMBTSA1505
-400mA
OT-23
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TIP31C
Abstract: TIP31c PNP Transistor tip31c application TIP31C1 TIP31CO Part Marking TO-220 STMicroelectronics JESD97 TIP32C tip31c3 tip31c transistor
Text: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN
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TIP31C
O-220
TIP31C
O-220
TIP32C.
TIP31c PNP Transistor
tip31c application
TIP31C1
TIP31CO
Part Marking TO-220 STMicroelectronics
JESD97
TIP32C
tip31c3
tip31c transistor
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Untitled
Abstract: No abstract text available
Text: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN
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TIP31C
O-220
TIP31C
O-220
TIP32C.
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TIP41CY
Abstract: TIP41C tip41c tip42c TRANSISTOR tip41c schematic diagram TRANSISTOR tip41c schematic tip42c TIP42CY TRANSISTOR tip41c TIP42C DIAGRAM STMicroelectronics to-220 amplifier date code
Text: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching
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TIP41C
TIP42C
O-220
TIP41C
O-220
TIP41CY
tip41c tip42c
TRANSISTOR tip41c schematic diagram
TRANSISTOR tip41c schematic
tip42c
TIP42CY
TRANSISTOR tip41c
TIP42C DIAGRAM
STMicroelectronics to-220 amplifier date code
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Untitled
Abstract: No abstract text available
Text: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA
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MMBTSA1505
-400mA
OT-23
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TIP41C
Abstract: TIP42C TIP41CY TIP42CY TRANSISTOR tip41c schematic diagram tip41c tip42c amplifier TRANSISTOR tip41c schematic TRANSISTOR tip41c TIP42C DIAGRAM JESD97
Text: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching
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TIP41C
TIP42C
O-220
TIP41C
O-220
TIP42C
TIP41CY
TIP42CY
TRANSISTOR tip41c schematic diagram
tip41c tip42c amplifier
TRANSISTOR tip41c schematic
TRANSISTOR tip41c
TIP42C DIAGRAM
JESD97
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transistor mj11032 equivalent
Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
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TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2N6490
transistor mj11032 equivalent
transistor mj11028 equivalent
MJ11032 equivalent
MJ11028-29 Transistor
3296 Variable Resistor 1k ohm
2SC493
AMPLIFIER 2SD718 2sb688 schematic
2sd717
MJ11030 equivalent
BU326
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419B-02
Abstract: SMD310
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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200X400
SC-88
419B-02
SMD310
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HN1B01FDW1T1
Abstract: 318F SMD310
Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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HN1B01FDW1T1
200X400
HN1B01FDW1T1/D
HN1B01FDW1T1
318F
SMD310
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Untitled
Abstract: No abstract text available
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A
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200X400
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Untitled
Abstract: No abstract text available
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A
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200X400
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SMD310
Abstract: SC-88 package
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A
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200X400
SC-88
SMD310
SC-88 package
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CW-5790
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitor/HFE Discontinued Radial lead type Series: HFE • Features Type : A Endurance :105°C 1000 to 2000h ■Specification Operating temp. range Rated W.V. range -55 to + 105°C 6.3 to 100 V .DC Nominal cap. range Capacitance 3.3 to 15000 µ F
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2000h
120Hz/
120Hz)
120Hz
RCR-2367
CW-5790
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
O-251
KSA1242YTU
KSA1242OTU
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Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitor/HFE Discontinued Radial lead type Series: HFE • Features Type : A Endurance :105°C 1000 to 2000h ■Specification Operating temp. range Rated W.V. range -55 to + 105°C 6.3 to 100 V .DC Nominal cap. range Capacitance 3.3 to 15000 µ F
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2000h
120Hz/
120Hz)
120Hz
RCR-2367
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PDF
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
KSA1242OTU
KSA1242YTU
O-251
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