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    HFE 4046 Search Results

    HFE 4046 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8A34046E-000NLG# Renesas Electronics Corporation SETS for SyncE and OTN Visit Renesas Electronics Corporation
    8A34046E-000NLG Renesas Electronics Corporation SETS for SyncE and OTN Visit Renesas Electronics Corporation
    8A34046E-000NLG8 Renesas Electronics Corporation SETS for SyncE and OTN Visit Renesas Electronics Corporation
    77317-404-62LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right angle Header, Through Hole, Double Row, 62 Positions ,2.54mm (0.100in) Pitch, Visit Amphenol Communications Solutions
    86840-466HLF Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Double Row, 66 Positions, 2.54 mm Pitch, Right Angle, 8.08 mm (0.318in) Mating, 5.84 mm (0.23in) Tail. Visit Amphenol Communications Solutions

    HFE 4046 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HFE4046BP Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF

    HFE 4046 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5455

    Abstract: 40636 2SK960 2Sk955 hfe max 200 2SK989 A5T2907 40361 40538 A8T4061
    Text: STI Type: 2N3389 Notes: Polarity: NPN Power Dissipation: .80 VCBO: 195 VCER: 160 ICBO: 140 ICBO A: 2.0 hFE: 60 hFE A: 7.0 VCE: .80 VBE: .90 IC: 10 COB: 10 fT: 30 Case Style: TO-205AD/TO-39 Industry Type: 2N3389 STI Type: 2N3410 Notes: Polarity: NPN Power Dissipation: .50


    Original     		PDF 2N3389 O-205AD/TO-39 2N3410 2N3413 O-205AD/TO-39: 2N3411 AD815 2N5455 40636 2SK960 2Sk955 hfe max 200 2SK989 A5T2907 40361 40538 A8T4061

    2SD1681

    Abstract: ITR09018
    Text: 2SD1681 Ordering number : EN2020B SANYO Semiconductors DATA SHEET 2SD1681 NPN Epitaxial Planar Silicon Transistor 18V/1.2A Switching Applications Applications • Converters, relay drivers, low-voltage and high power AF Amplifier. Features • • Low saturation voltage and excellent linearity of hFE.


    Original     		PDF 2SD1681 EN2020B 2SD1681 ITR09018

    LOW-POWER SILICON NPN

    Abstract: 40478 2SC382 40481 BF166 2SC674 bsx92 2sc237 BSV77 98ya
    Text: RF LOW-POWER SILICON NPN Item Number Part Number Manufacturer Y BR CEO fT (V) (Hz) hFE Ic Max (A) Cobo Max (F) ICBO Max (A) t, Max (8) tf Max (8) Po Max (W) Toper Max eC) Package Style Additional Transistors, (Cont'd) 5 10 BSV90 BSV91 BSV91 BSV77 2SC237 2SC237


    Original     		PDF BSV90 BSV91 BSV77 2SC237 2SC239 BF187 BF306 BF166 LOW-POWER SILICON NPN 40478 2SC382 40481 2SC674 bsx92 98ya

    power bjt advantages and disadvantages

    Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
    Text: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number


    Original     		PDF HBFP-0405 HBFP-0420 5968-2387E. 5988-6173EN power bjt advantages and disadvantages HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405

    2sd1681

    Abstract: 2sb1141
    Text: Ordering number:ENN2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions • Converters, relay drivers, low-voltage and high power AF Amplifier. unit:mm 2042B [2SB1141/2SD1681] Features


    Original     		PDF ENN2020A 2SB1141/2SD1681 2042B 2SB1141/2SD1681] 2sd1681 2sb1141

    2SD1681

    Abstract: 2SB1141
    Text: Ordering number:ENN2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions • Converters, relay drivers, low-voltage and high power AF Amplifier. unit:mm 2042B [2SB1141/2SD1681] Features


    Original     		PDF ENN2020A 2SB1141/2SD1681 2042B 2SB1141/2SD1681] 2SB1141 O-126ML 2SD1681 2SB1141

    2SB1141

    Abstract: 2020-3
    Text: Ordering number:2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions • Converters, relay drivers, low-voltage and high power AF Amplifier. unit:mm 2042A [2SB1141/2SD1681] Features


    Original     		PDF 2SB1141/2SD1681 2SB1141/2SD1681] 2SB1141 O-126ML 2SB1141 2020-3

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    2SC631

    Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC631 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B

    transistor a640

    Abstract: transistor A608 A608 transistor pnp 2SC634 A641 NPN transistor A607 A643S A608 transistor FV918 A642 transistor pnp
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V FT4023 transistor a640 transistor A608 A608 transistor pnp 2SC634 A641 NPN transistor A607 A643S A608 transistor FV918 A642 transistor pnp

    2SK19GR

    Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V 2SK19GR X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001

    FV918

    Abstract: MA7809 a608 L17D
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    2N3406

    Abstract: ma7805 Transistor 2n2307 BSX34 2n2213 BSX31 2N2570 BSV58B 2N2307 ME214
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. 2N3406 ma7805 Transistor 2n2307 BSX34 2n2213 BSX31 2N2570 BSV58B 2N2307 ME214

    ma7805

    Abstract: BSX34 2N3406 NS6208 NS3041 BSX85 sc-1625 T072 UC340 UC801
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; ma7805 BSX34 2N3406 NS6208 NS3041 BSX85 sc-1625 T072 UC340 UC801

    ma7805

    Abstract: 2n2213 2N2569 2N3406 2N2307 2N2570 BC199B NS6210 NS7630 TF251
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    ma7805

    Abstract: No abstract text available
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    MA7805

    Abstract: 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. MA7805 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78

    ma7805

    Abstract: BFR14 AT344 GI3793 GME3001 PET3001 T018 2N3082 BSV56 Ro-270
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. ma7805 BFR14 AT344 GI3793 GME3001 PET3001 T018 2N3082 BSV56 Ro-270

    ma7805

    Abstract: Transistor 2n2307 2N2709 2N4411 u13106 2n2213 ME214 2Sa567 NS6210 400M
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. ma7805 Transistor 2n2307 2N2709 2N4411 u13106 2n2213 ME214 2Sa567 NS6210 400M

    MA7805

    Abstract: ME214 OC740
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    ma7805

    Abstract: 2N3406 BC412 KIS434 NS435 NS436 NS437 NS438 SA1000 T018
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. ma7805 2N3406 BC412 KIS434 NS435 NS436 NS437 NS438 SA1000 T018

    MA7805

    Abstract: Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD EFFECT TR A N SIST O R S 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; MA7805 Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A