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    HFE 118 Search Results

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    HFE 118 Price and Stock

    Analog Devices Inc LTC3118HFE#PBF

    Switching Controllers 18V, 2A Buck-Boost DC/DC Conv w/ L-Loss
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    Mouser Electronics LTC3118HFE#PBF 50
    • 1 $18.27
    • 10 $12.81
    • 100 $11.21
    • 1000 $10.16
    • 10000 $10.16
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    Analog Devices Inc LTC3118HFE#TRPBF

    Switching Controllers 18V, 2A Buck-Boost DC/DC Conv w/ L-Loss
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LTC3118HFE#TRPBF
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    • 10000 $10.51
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    HFE 118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor mj11032 equivalent

    Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc


    Original     		PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326

    MTH13N50

    Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
    Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:


    Original     		PDF MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50

    STS9013

    Abstract: Transistor TRANSISTOR 246 F 9016 transistor 9016 transistor transistor 9016 npn 9016 STS9012 transistor 9016 kst9016
    Text: STS9013 Semiconductor NPN Silicon Transistor Descriptions • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking Package Code STS9013


    Original     		PDF STS9013 STS9012 KST-9016-000 100mA, STS9013 Transistor TRANSISTOR 246 F 9016 transistor 9016 transistor transistor 9016 npn 9016 STS9012 transistor 9016 kst9016

    STC9013N

    Abstract: ksd 202 marking EB 202 diode STA9012N STA9012
    Text: STA9012N Semiconductor PNP Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STC9013N Ordering Information Type NO. Marking Package Code STA9012N STA9012


    Original     		PDF STA9012N STC9013N STA9012 O-92N KSD-T0C021-001 STC9013N ksd 202 marking EB 202 diode STA9012N STA9012

    KTC9012

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity. ・Complementary to KTC9013. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC9012 KTC9013. -50mA -100mA, -10mA -20mA, 100MHz KTC9012

    ksd 202

    Abstract: marking EB 202 diode STA9012SF STC9013SF STA9012
    Text: STC9013SF Semiconductor Epitaxial planar NPN silicon transistor Descriptions • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STA9012SF Ordering Information Type NO. Marking Package Code


    Original     		PDF STC9013SF STA9012SF OT-23F KSD-T5C005-000 ksd 202 marking EB 202 diode STA9012SF STC9013SF STA9012

    STS9012

    Abstract: Transistor TRANSISTOR 246 9015 transistor STS9013 transistor 9015 c 9015 PNP transistor 9015 9015 9015 TO-92
    Text: STS9012 Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking STS9012 STS9012 Package Code


    Original     		PDF STS9012 STS9013 KST-9015-000 -50mA -100mA, -10mA -100mA STS9012 Transistor TRANSISTOR 246 9015 transistor STS9013 transistor 9015 c 9015 PNP transistor 9015 9015 9015 TO-92

    ksd 202

    Abstract: marking EB 202 diode STA9012N STC9013N
    Text: STC9013N Semiconductor Epitaxial planar NPN silicon transistor Descriptions • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STA9012N Ordering Information Type NO. Marking STC9013N Package Code


    Original     		PDF STC9013N STA9012N STC9013 O-92N KSD-T0C010-001 ksd 202 marking EB 202 diode STA9012N STC9013N

    ksd 202

    Abstract: marking EB 202 diode STA9012SF STC9013SF
    Text: STA9012SF Semiconductor PNP Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STC9013SF Ordering Information Type NO. Marking Package Code STA9012SF 9A□


    Original     		PDF STA9012SF STC9013SF OT-23F KSD-T5C002-000 ksd 202 marking EB 202 diode STA9012SF STC9013SF

    texas 2n3055

    Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100

    mj150* darlington mj15002

    Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284


    Original     		PDF 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100

    transistor K 3596

    Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc


    Original     		PDF MJE700 MJE800 T0220AB, MJE700T MJE800T MJE702 MJE703 MJE802 transistor K 3596 TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100

    2sa1046

    Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0


    Original     		PDF BDX33B, BDX33C, 33C/34B, 220AB BDX33B BDX33C* BDX34B BDX34C* TIP73B 2sa1046 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168

    bdx54c equivalent

    Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386

    Untitled

    Abstract: No abstract text available
    Text: NTE2682 NPN & NTE2683 (PNP) Silicon Complementary Darlington Transistors Audio Power Output TO3PL Type Package Features: D High Forward Current Transfer Ratio, hFE D Low Collector−Emitter Saturation Voltage, VCE(sat) D Optimum for 120W HiFi Output Applications


    Original     		PDF NTE2682 NTE2683 30MHz

    KTC9012S

    Abstract: KTC9013S
    Text: SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage


    Original     		PDF KTC9012S KTC9013S. 10x8x0 KTC9012S KTC9013S

    STS9013

    Abstract: STS9012
    Text: STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features C B E • Excellent hFE linearity. • Complementary pair with STS9012 E TO-92 Ordering Information Type NO. STS9013 Marking


    Original     		PDF STS9013 STS9012 KSD-T0A047-000 STS9013 STS9012

    KTC9012

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage


    Original     		PDF KTC9012 KTC9013. 625mW 400mW KTC9012

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage


    Original     		PDF KTC9013 KTC9012. 625mW 400mW

    KTC9013 transistor

    Abstract: k 246 transistor KTC9012 KTC9013
    Text: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity. ᴌComplementary to KTC9012. N E K G J D MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage


    Original     		PDF KTC9013 KTC9012. 100mA, 100MHz KTC9013 transistor k 246 transistor KTC9012 KTC9013

    Untitled

    Abstract: No abstract text available
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity


    OCR Scan     		PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 001470b

    2SA988

    Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
    Text: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )


    OCR Scan     		PDF 2SA988 SC-43B S24-S| 2SA988 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540

    transistor 2sa988

    Abstract: 2SA988 27-ti M5111 2sa988 transistor RUJ 17 33 PA33
    Text: is I Silicon Transisto r *$ # i i : mm ) i t O ffijfftig ils , Ì É ì S l t x 4 v & ' y ' T , 50 mA i X 6 0 # K 7 ï r f f l L x \ t m t o s b îœ , x $ t to ss hFE *> -?, m m m m v * i $ è x t o V , CEO : - 120 v hFE (Ic = - 1.0 mA) : 500 T Y P .


    OCR Scan     		PDF 2SA988 SC-43B MI886 26-tl! 27-tttfiS 29-maa 4S24-S| 484Sità transistor 2sa988 2SA988 27-ti M5111 2sa988 transistor RUJ 17 33 PA33

    Untitled

    Abstract: No abstract text available
    Text: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,


    OCR Scan     		PDF OT-89, SC-62) 2SB1188; 2SB1188 2SD1766