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Catalog Datasheet	MFG & Type	Document Tags	PDF
HFU3N80 Abstract: No abstract text available Text: BVDSS = 800 V RDS on typ = 4.0 Ω HFD3N80/HFU3N80 ID = 2.5 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD3N80  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU3N80 1.Gate 2. Drain 3. Source	Original	HFD3N80/HFU3N80 HFD3N80 HFU3N80 O-252 O-251 HFU3N80	PDF

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HFU3N80

Abstract: No abstract text available
Text: BVDSS = 800 V RDS on typ = 4.0 Ω HFD3N80/HFU3N80 ID = 2.5 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD3N80  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU3N80 1.Gate 2. Drain 3. Source

Original

HFD3N80/HFU3N80 HFD3N80 HFU3N80 O-252 O-251 HFU3N80

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