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    HFD2N60

    Abstract: No abstract text available
    Text: BVDSS = 600 V RDS on typ = 4.0 Ω HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N60  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N60 1.Gate 2. Drain 3. Source


    Original     		HFD2N60 HFU2N60 HFD2N60 O-252 O-251 PDF

    RG 702 Diode

    Abstract: hfu2n60s HFD2N60S HFU2N60 702 D-PAK
    Text: BVDSS = 600 V RDS on typ = 4.2 Ω HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source


    Original     		HFD2N60S HFU2N60S HFD2N60S O-252 O-251 RG 702 Diode hfu2n60s HFU2N60 702 D-PAK PDF