HF30C120ACE Search Results

HF30C120ACE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
HF30C120ACE		International Rectifier	Hexfred Die in Wafer Form		Original	PDF

HF30C120ACE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)	Original	PDF	PD-20502 HF30C120ACE 150mm, HFA08PB120
HF30C120ACE Abstract: HFA08PB120 PD-20502 Text: Preliminary Data Sheet PD-20502 rev. A 11/98 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)	Original	PDF	PD-20502 HF30C120ACE 125mm, HFA08PB120 HF30C120ACE HFA08PB120
HF30C120ACE Abstract: HFA08PB120 Text: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)	Original	PDF	PD-20502 HF30C120ACE 12-Mar-07 HF30C120ACE HFA08PB120
HF30C120ACE Abstract: HFA08PB120 Text: PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.	Original	PDF	HF30C120ACE HF30C120ACE HFA08PB120
HF30C120ACE Abstract: HFA08PB120 Text: Previous Datasheet Index Next Data Sheet PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current	Original	PDF	HF30C120ACE HF30C120ACE HFA08PB120
IN1190A diode Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120 Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series	Original	PDF	1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 IN1190A diode an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 DT93-1 HFA16PB120
SCR gate drive circuit Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03 Text: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series	Original	PDF	1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 SCR gate drive circuit an 80771 IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Hexfred Die in Wafer Form Abstract: No abstract text available Text: Preliminary D a ta sh e e t PD-20502 rev. A 11/98 International IQR Rectifier HF30C120ACE Hexfred Die in W afer Form 1200 V Size 30 5" W afer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) Test Conditions V fm Forw ard Voltage	OCR Scan	PDF	PD-20502 HF30C120ACE 125mm, HFA08PB120 635TOLERANCE Hexfred Die in Wafer Form