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    HF TRANSISTORS TABLE Search Results

    HF TRANSISTORS TABLE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    HF TRANSISTORS TABLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT123 Package

    Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the


    Original     		PDF SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


    Original     		PDF twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A

    741 datasheet motorola

    Abstract: MOTOROLA 934 motorola MOSFET 935 905 motorola MRF182 MRF182S
    Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz


    Original     		PDF MRF182/D MRF182 MRF182S MRF182) MRF182S) 741 datasheet motorola MOTOROLA 934 motorola MOSFET 935 905 motorola MRF182 MRF182S

    TH430

    Abstract: SD1728 M177
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		PDF SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177

    A1727

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz


    Original     		PDF MRF182/D MRF182 MRF182S MRF182/D* A1727

    MRF182

    Abstract: MRF182S Rite-274301944 MRF1825
    Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz


    Original     		PDF MRF182/D MRF182 MRF182S MRF182) MRF182S) MRF182/D* MRF182 MRF182S Rite-274301944 MRF1825

    Product Selector Guide

    Abstract: NI-400S-2S
    Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high


    Original     		PDF MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S

    TH430

    Abstract: M177 JESD97 SD1728 TH430 marking
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		PDF SD1728 TH430) 56MHz SD1728 TH430 TH430 M177 JESD97 TH430 marking

    STAC4932

    Abstract: STAC4932F st marking code STAC244F 1715
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932 st marking code STAC244F 1715

    Untitled

    Abstract: No abstract text available
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF SD3932 2002/95/EC SD3932

    SD2931-11

    Abstract: Bead 220 ohm 2.5A SD2931 VK200 17329
    Text: SD2931-11 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-11 SD2931-11 SD2931 SD2931 Bead 220 ohm 2.5A VK200 17329

    MEC 1300

    Abstract: 2x100mA STAC244F
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B MEC 1300 2x100mA

    SD2941-10

    Abstract: SD2931-10 VK200 Power Transformer EE-19
    Text: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR


    Original     		PDF SD2941-10 175MHz SD2941-10 SD2931-10. SD2931-10 VK200 Power Transformer EE-19

    SD2942

    Abstract: RG316-25 SD2942 equivalent 200B 700B RG316 SD2932 ST40 SD2932 reference Fair-Rite bead
    Text: SD2942 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION, PUSH PULL ■ POUT = 350W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on M244 Epoxy sealed Pin Connection


    Original     		PDF SD2942 175MHz SD2942 SD2932. RG316-25 SD2942 equivalent 200B 700B RG316 SD2932 ST40 SD2932 reference Fair-Rite bead

    RG316-25

    Abstract: No abstract text available
    Text: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932 RG316-25

    SD2941-10

    Abstract: EE-19 transformer SD2931-10 VK200
    Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower


    Original     		PDF SD2941-10 175MHz SD2941-10 SD2931-10. EE-19 transformer SD2931-10 VK200

    STAC3932F

    Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
    Text: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC3932F 2002/95/EC STAC244F STAC3932F RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v

    100C

    Abstract: 700B SD3932
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF SD3932 2002/95/EC SD3932 100C 700B

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    Fair-Rite ATC

    Abstract: B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 SD2923 f-30MHz
    Text: SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz . THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2923 SD2923 sc1421d SC14220 008706A L0G1101 Fair-Rite ATC B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 f-30MHz

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing common


    OCR Scan     		PDF IS22I MRF183

    zt12-9

    Abstract: zt129
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common


    OCR Scan     		PDF MRF182 MRF182S ts22l RF182S zt12-9 zt129

    L13T

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing com mon


    OCR Scan     		PDF IS22I MRF182 L13T