HF TRANSISTORS TABLE Search Results

HF TRANSISTORS TABLE Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

HF TRANSISTORS TABLE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SOT123 Package Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the	Original	SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note	PDF
TPV3100 Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE	Original	twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A	PDF
741 datasheet motorola Abstract: MOTOROLA 934 motorola MOSFET 935 905 motorola MRF182 MRF182S Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz	Original	MRF182/D MRF182 MRF182S MRF182) MRF182S) 741 datasheet motorola MOTOROLA 934 motorola MOSFET 935 905 motorola MRF182 MRF182S	PDF
TH430 Abstract: SD1728 M177 Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and	Original	SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177	PDF
A1727 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz	Original	MRF182/D MRF182 MRF182S MRF182/D* A1727	PDF
MRF182 Abstract: MRF182S Rite-274301944 MRF1825 Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz	Original	MRF182/D MRF182 MRF182S MRF182) MRF182S) MRF182/D* MRF182 MRF182S Rite-274301944 MRF1825	PDF
Product Selector Guide Abstract: NI-400S-2S Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high	Original	MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S	PDF
TH430 Abstract: M177 JESD97 SD1728 TH430 marking Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and	Original	SD1728 TH430) 56MHz SD1728 TH430 TH430 M177 JESD97 TH430 marking	PDF
STAC4932 Abstract: STAC4932F st marking code STAC244F 1715 Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%	Original	STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932 st marking code STAC244F 1715	PDF
Untitled Abstract: No abstract text available Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description	Original	SD3932 2002/95/EC SD3932	PDF
SD2931-11 Abstract: Bead 220 ohm 2.5A SD2931 VK200 17329 Text: SD2931-11 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures	Original	SD2931-11 SD2931-11 SD2931 SD2931 Bead 220 ohm 2.5A VK200 17329	PDF
MEC 1300 Abstract: 2x100mA STAC244F Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%	Original	STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B MEC 1300 2x100mA	PDF
SD2941-10 Abstract: SD2931-10 VK200 Power Transformer EE-19 Text: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR	Original	SD2941-10 175MHz SD2941-10 SD2931-10. SD2931-10 VK200 Power Transformer EE-19	PDF
SD2942 Abstract: RG316-25 SD2942 equivalent 200B 700B RG316 SD2932 ST40 SD2932 reference Fair-Rite bead Text: SD2942 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION, PUSH PULL ■ POUT = 350W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on M244 Epoxy sealed Pin Connection	Original	SD2942 175MHz SD2942 SD2932. RG316-25 SD2942 equivalent 200B 700B RG316 SD2932 ST40 SD2932 reference Fair-Rite bead	PDF

RG316-25 Abstract: No abstract text available Text: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description	Original	STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932 RG316-25	PDF
SD2941-10 Abstract: EE-19 transformer SD2931-10 VK200 Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower	Original	SD2941-10 175MHz SD2941-10 SD2931-10. EE-19 transformer SD2931-10 VK200	PDF
STAC3932F Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v Text: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European	Original	STAC3932F 2002/95/EC STAC244F STAC3932F RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v	PDF
100C Abstract: 700B SD3932 Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description	Original	SD3932 2002/95/EC SD3932 100C 700B	PDF
smd npn 2n2222 Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.	OCR Scan	2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200	PDF
1N5411 Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal	OCR Scan	CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756	PDF
Fair-Rite ATC Abstract: B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 SD2923 f-30MHz Text: SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz . THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS	OCR Scan	SD2923 SD2923 sc1421d SC14220 008706A L0G1101 Fair-Rite ATC B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 f-30MHz	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing common	OCR Scan	IS22I MRF183	PDF
zt12-9 Abstract: zt129 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common	OCR Scan	MRF182 MRF182S ts22l RF182S zt12-9 zt129	PDF
L13T Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing com mon	OCR Scan	IS22I MRF182 L13T	PDF

HF TRANSISTORS TABLE Search Results

HF TRANSISTORS TABLE Result Highlights (5)

HF TRANSISTORS TABLE Datasheets Context Search

SOT123 Package

TPV3100

741 datasheet motorola

TH430

A1727

MRF182

Product Selector Guide

TH430

STAC4932

Untitled

SD2931-11

MEC 1300

SD2941-10

SD2942

RG316-25

SD2941-10

STAC3932F

100C

smd npn 2n2222

1N5411

Fair-Rite ATC

Untitled

zt12-9

L13T