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    HF SSB APPLICATIONS RF 28 V Search Results

    HF SSB APPLICATIONS RF 28 V Result Highlights (1)

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    HF SSB APPLICATIONS RF 28 V Datasheets Context Search

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    MS1226

    Abstract: No abstract text available
    Text: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1226 MS1226

    Untitled

    Abstract: No abstract text available
    Text: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1226 MS1226 RTH00

    HF SSB APPLICATIONS RF 28 v

    Abstract: j192
    Text: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This


    Original     		PDF MS1076 MS1076 HF SSB APPLICATIONS RF 28 v j192

    7048

    Abstract: MS1076
    Text: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This


    Original     		PDF MS1076 MS1076 053-7048IC 7048

    SD1730

    Abstract: Planar choke TH560 choke C20 C24
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 35ise Planar choke TH560 choke C20 C24

    choke coil

    Abstract: SD1729 TH416
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 choke coil TH416

    SD1729

    Abstract: TH416 88nF
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 TH416 88nF

    Untitled

    Abstract: No abstract text available
    Text: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This


    Original     		PDF MS1076 MS1076

    SD1730

    Abstract: TH560 arco
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 TH560 arco

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization


    Original     		PDF MS1078 MS1078

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1077 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization


    Original     		PDF MS1077 MS1077

    HF SSB APPLICATIONS

    Abstract: MS1078
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization


    Original     		PDF MS1078 MS1078 HF SSB APPLICATIONS

    TH416

    Abstract: SD1729
    Text: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon


    Original     		PDF SD1729 TH416) SD1729 TH416

    SD1730

    Abstract: TH560 15 w RF POWER TRANSISTOR NPN
    Text: SD1730 TH560 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 12 dB GAIN


    Original     		PDF SD1730 TH560) SD1730 TH560 15 w RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION


    Original     		PDF MS1226 MS1226

    MS1226

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION


    Original     		PDF MS1226 MS1226 MSC0943

    SD1407

    Abstract: VK-200 arco 463
    Text: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 VK-200 arco 463

    SD1407

    Abstract: vk200 VK-200 m174 5004LFL
    Text: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 SD14thout vk200 VK-200 m174 5004LFL

    SD1407

    Abstract: vk200 VK-200 vk 200 SD140
    Text: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 vk200 VK-200 vk 200 SD140

    M113

    Abstract: SD1224-10
    Text: SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −28 dB COMMON EMITTER GOLD METALLIZATION P OUT = 30 W MIN. WITH 18 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1224-10 BRANDING 1224-10 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1224-10 SD1224-10 M113

    SD1224-10

    Abstract: M113
    Text: SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −28 dB COMMON EMITTER GOLD METALLIZATION POUT = 30 W MIN. WITH 18 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1224-10 BRANDING 1224-10 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1224-10 SD1224-10 M113

    SD1407

    Abstract: VK-200 vk200 vk 200
    Text: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    Original     		PDF SD1407 SD1407 VK-200 vk200 vk 200

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON SD1729 TH416 IILG RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . OPTIMIZED FOR SSB . 30 MHz . 28 VOLTS • IMD -3 0 dB . COMMON EMITTER . GOLD METALLIZATION ■ P o u t = 130 W P E P WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon


    OCR Scan     		PDF SD1729 TH416) SD1729 D070704

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON * 71. nn g^@l[LggirMnigi_SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ ■ . ■ 30 MHz 28 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION . P o u t = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar


    OCR Scan     		PDF SD1407 SD1407 DQ7G220