IRF5NJ9540
Abstract: No abstract text available
Text: PD - 94038A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4038A
IRF5NJ9540
-100V
-100V,
IRF5NJ9540
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IRF5Y9540CM
Abstract: 4.5v to 100v input regulator
Text: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4027A
O-257AA)
IRF5Y9540CM
-100V
high-energy52-7105
IRF5Y9540CM
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4027A
O-257AA)
IRF5Y9540CM
-100V
high-e252-7105
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Untitled
Abstract: No abstract text available
Text: PD - 94038 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ9540
-100V
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Untitled
Abstract: No abstract text available
Text: PD - 94449 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF7Y1405CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF7Y1405CM 55V RDS(on) ID 0.0153Ω 18A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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O-257AA)
IRF7Y1405CM
5M-1994.
O-257AA.
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IRL5NJ7404
Abstract: No abstract text available
Text: PD - 94052 LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ7404 20V, P-CHANNEL Product Summary Part Number BVDSS IRL5NJ7404 -20V RDS(on) 0.04Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRL5NJ7404
IRL5NJ7404
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DM t 96 10a 250v
Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4167A
O-257AA)
IRFY11N50CMA
O-257AA
DM t 96 10a 250v
IRFY11N50CMA
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD - 94033 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ5305 -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ5305
high-en252-7105
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IRF5NJ5305
Abstract: IRF (10A) 55V
Text: PD - 94033 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ5305 -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ5305
IRF5NJ5305
IRF (10A) 55V
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IRF7NA2907
Abstract: No abstract text available
Text: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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94337B
IRF7NA2907
IRF7NA2907
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Untitled
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
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IRF5NJ6215
Abstract: 75vds p mosfet
Text: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ6215
-150V
-150V,
IRF5NJ6215
75vds p mosfet
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IRF (10A) 55V
Abstract: IRF7Y1405CM
Text: PD - 94449 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF7Y1405CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF7Y1405CM 55V RDS(on) ID 0.0153Ω 18A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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O-257AA)
IRF7Y1405CM
5M-1994.
O-257AA.
IRF (10A) 55V
IRF7Y1405CM
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Untitled
Abstract: No abstract text available
Text: PD - 94038A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4038A
IRF5NJ9540
-100V
-100V,
|
|
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Untitled
Abstract: No abstract text available
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4167A
O-257AA)
IRFY11N50CMA
O-257AA
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Untitled
Abstract: No abstract text available
Text: PD - 94027 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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O-257AA)
IRF5Y9540CM
-100V
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IRF5NJ6215
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
IRF5NJ6215
|
Untitled
Abstract: No abstract text available
Text: PD - 94337A HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4337A
IRF7NA2907
|
Untitled
Abstract: No abstract text available
Text: PD - 94449A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF7Y1405CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF7Y1405CM 55V RDS(on) ID 0.0153Ω 18A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4449A
O-257AA)
IRF7Y1405CM
5M-1994.
O-257AA.
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IRF7NJZ44V
Abstract: voltage regulator 10V smd
Text: PD - 94433 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF7NJZ44V 60V, N-CHANNEL Product Summary Part Number BVDSS IRF7NJZ44V 60V RDS(on) 0.0165Ω ID 22A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF7NJZ44V
IRF7NJZ44V
voltage regulator 10V smd
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Untitled
Abstract: No abstract text available
Text: PD - 94433 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF7NJZ44V 60V, N-CHANNEL Product Summary Part Number BVDSS IRF7NJZ44V 60V RDS(on) 0.0165Ω ID 22A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF7NJZ44V
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IRF7E3704
Abstract: LCC-18
Text: PD - 94678 HEXFET POWER MOSFET SURFACE MOUNT LCC-18 IRF7E3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7E3704 20V RDS(on) 0.05Ω ID 12A* LCC-18 ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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LCC-18)
IRF7E3704
LCC-18
IRF7E3704
LCC-18
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Malouyans
Abstract: RF830 Spice 2 computer models for hexfets HEXFETs FETs HEXFET SPICE VQE 22 AN-975B
Text: APPLICATIO N NOTE 975B SPICE Computer Models for HEXFET Power MOSFETs HEXFET is a trademark of International Rectifier by S. Malouyans Introduction an accurate m ethod o f representing the variation in C g j. However, this m ust be achieved w ithout m aking excessive
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IRF530
IRF830
AN-975B
Malouyans
RF830
Spice 2 computer models for hexfets
HEXFETs FETs
HEXFET SPICE
VQE 22
AN-975B
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C312 diode
Abstract: diode C309 diode C315 9311J AN975 power MOSFET IRF830 IRF830 IRF831 IRF833 IF83
Text: Data Sheet No. PD-9.311J IN T E R N A T IO N A L R E C T IF IE R I« R REPETITIVE AVALANCHE AND dv/dt RATED" IRF830 IRF831 IRF83S IRF833 HEXFET TRANSISTORS IM -C H A IM IM E L 500 Volt, 1.5 Ohm HEXFET TO-220AB Plastic Package Product Summary The HEXFET technology is the key to International
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IRF831
O-220AB
C-315
IRF830,
IRF831,
IRF832,
IRF833
C-316
C312 diode
diode C309
diode C315
9311J
AN975
power MOSFET IRF830
IRF830
IF83
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