IRHNA7360SE
Abstract: No abstract text available
Text: PD - 91398A IRHNA7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifiers RADHardTM HEXFET® MOSFET
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1398A
IRHNA7360SE
MIL-STD-750,
MlL-STD-750,
IRHNA7360SE
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IRHNA7264SE
Abstract: RAD-HARD
Text: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91432C
IRHNA7264SE
MIL-STD-750,
MlL-STD-750,
IRHNA7264SE
RAD-HARD
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IRHNA7460SE
Abstract: HEXFET Power MOSFET SMD2
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
HEXFET Power MOSFET SMD2
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IRHNA7360SE
Abstract: No abstract text available
Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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PD-91398B
IRHNA7360SE
12volt
MIL-STD-750,
320volt
MlL-STD-750,
IRHNA7360SE
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IRHNA7460SE
Abstract: No abstract text available
Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifiers RADHardTM HEXFET® MOSFET
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1399A
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
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Untitled
Abstract: No abstract text available
Text: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91432C
IRHNA7264SE
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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PD-91398B
IRHNA7360SE
12volt
MIL-STD-750,
320volt
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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94337B
IRF7NA2907
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Untitled
Abstract: No abstract text available
Text: PD - 94337A HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4337A
IRF7NA2907
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IRF7NA2907
Abstract: No abstract text available
Text: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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94337B
IRF7NA2907
IRF7NA2907
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IRF igbt gate driver
Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Text: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns
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IRFP17N50LS
170ns
SMD-247
O-247AC.
SMD-247
P450S
IRFP450S
IRF igbt gate driver
MOSFET IRF 630
st smd diode marking code ET
MOSFET IRF 630 Datasheet
MOSFET IRF 570
MOSFET IRF 603
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smd 39a diode zener
Abstract: TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994 IRLBD59N04E
Text: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®
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-93910B
IRLBD59N04E
IRLBD59N04E
100pF,
AN-994.
smd 39a diode zener
TH 2190 mosfet
39A zener diode
th 2190
TH 2190 mosfet isolated
smd diode 39a
P Channel Power MOSFET IRF
TH 2190 Transistor
AN-994
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TH 2190 mosfet
Abstract: smd 39a diode zener TH 2190 mosfet isolated AN-994 IRLBD59N04E SMD-220 G10 zener diode 39A zener diode
Text: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®
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-93910B
IRLBD59N04E
IRLBD59N04E
100pF,
AN-994.
TH 2190 mosfet
smd 39a diode zener
TH 2190 mosfet isolated
AN-994
SMD-220
G10 zener diode
39A zener diode
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SMD 51A
Abstract: IRHNA3160 IRHNA4160 IRHNA7160 IRHNA8160 JANSR2N7432U
Text: PD - 91396C IRHNA7160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) RDS(on)
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91396C
IRHNA7160
MIL-PRF-19500/664
IRHNA7160
IRHNA3160
JANSR2N7432U
JANSF2N7432U
IRHNA4160
JANSG2N7432U
JANSH2N7432U
SMD 51A
IRHNA4160
IRHNA8160
JANSR2N7432U
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marking code V6 33 surface mount diode
Abstract: SMD Diode V6 marking code KOREAN SMD MARKING CODE marking v6 -98 diode irfs17n20d marking code V6 surface mount diode V6 19 marking code diode
Text: PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFB17N20DPbF
IRFS17N20DPbF
IRFSL17N20DPbF
AN1001)
O-220AB
IRFB17N20D
IRFS17N20D
O-262
IRFSL17N20D
marking code V6 33 surface mount diode
SMD Diode V6 marking code
KOREAN SMD MARKING CODE
marking v6 -98 diode
irfs17n20d
marking code V6 surface mount diode
V6 19 marking code diode
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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IRHNA3064
Abstract: IRHNA4064 IRHNA7064 IRHNA8064 JANSR2N7431U
Text: PD - 91416B IRHNA7064 JANSR2N7431U 60V, N-CHANNEL REF: MIL-PRF-19500/664 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7064 IRHNA3064 IRHNA4064 IRHNA8064 Radiation Level 100K Rads (Si)
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91416B
IRHNA7064
JANSR2N7431U
MIL-PRF-19500/664
IRHNA3064
IRHNA4064
IRHNA8064
1000K
IRHNA3064
IRHNA4064
IRHNA7064
IRHNA8064
JANSR2N7431U
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ak 957 1542 d
Abstract: AN-994 IRF530S IRFZ46NS SMD-220 DIODE smd marking Ak
Text: Previous Datasheet Index Next Data Sheet PD - _ IRFZ46NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω ID = 46A
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IRFZ46NS
SMD-220
ak 957 1542 d
AN-994
IRF530S
IRFZ46NS
DIODE smd marking Ak
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AN-994
Abstract: IRF1310S SMD-220 smd marking LD
Text: Previous Datasheet Index Next Data Sheet PD - 9.1221 IRF1310S HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature VDSS = 100V
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IRF1310S
SMD-220
AN-994
IRF1310S
smd marking LD
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AN-994
Abstract: IRF530S IRFZ44NS SMD-220 marking code EA SMD MOSFET smd diode code A
Text: Previous Datasheet Index Next Data Sheet PD - _ IRFZ44NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.024Ω ID = 41A
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IRFZ44NS
SMD-220
AN-994
IRF530S
IRFZ44NS
marking code EA SMD MOSFET
smd diode code A
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IRHNA9064
Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Text: PD - 91447B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si)
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91447B
IRHNA9064
JANSR2N7424U
MIL-PRF-19500/655
IRHNA93064
JANSF2N7424U
-150A/
MIL-STD-750,
IRHNA9064
JANSF2N7424U
JANSR2N7424U
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pj 68 SMD diode
Abstract: 1RF9620 IRF9620 DIODE marking CJSS ScansUX102 SMD 1DV 19
Text: International PôkIRectifier PD-9.351 F IRF9620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - -200V ^DS on = 1 lD = -3.5A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line
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OCR Scan
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IRF9620
-200V
O-220
T0-220
pj 68 SMD diode
1RF9620
DIODE marking CJSS
ScansUX102
SMD 1DV 19
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1rf9610
Abstract: IRF9610 IRF9610S ScansUX102 afra marking
Text: PD-9.350F International l»51 Rectifier IRF9610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = - 2 0 0 V ^DS on = 3 - 0 0 ln = -1.8A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line
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OCR Scan
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PDF
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IRF9610
-200V
O-220
1RF9610S
1rf9610
IRF9610S
ScansUX102
afra marking
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