HEWLETTPACKARD RF TRANSISTOR Search Results

HEWLETTPACKARD RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

HEWLETTPACKARD RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original	PDF
ATF-10736 Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05 Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t	Original	PDF	ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Untitled Abstract: No abstract text available Text: Silicon Bipolar Transistors Reliability Data HBFP-0405 HBFP-0420 HBFP-0450 Description The following cumulative test results have been obtained by Hewlett-Packard from process and product qualification, reliability monitor, and engineering evaluation tests. For the purpose	Original	PDF	HBFP-0405 HBFP-0420 HBFP-0450 5968-1409E JESD22-A113-A
high frequency transistor ga as fet Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .	Original	PDF	ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Hewlett-Packard LED Abstract: HP MMIC optocouplers* hp Text: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has	Original	PDF
Untitled Abstract: No abstract text available Text: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has	Original	PDF
transistor s11 s12 s21 s22 Abstract: No abstract text available Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22
AT-41511 Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411 Text: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular	Original	PDF	AT-41511 5964-3853E AT-41511 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
a1270* transistor Abstract: 1689c hp plotter Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2	Original	PDF	5091-6489E 5968-1410E a1270* transistor 1689c hp plotter
transistor k 4212 fet Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212 Text: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips	Original	PDF	5091-8802E 5968-3242E transistor k 4212 fet Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
mmic a08 Abstract: MSA-0885 HP MMIC 101 A08 monolithic amplifier A08 mmic Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.	Original	PDF	MSA-0885 MSA-0885 5965-9545E mmic a08 HP MMIC 101 A08 monolithic amplifier A08 mmic
Bipolar Junction Transistor Abstract: 414 rf transistor AT-420 Text: RF and Microwave Silicon Bipolar␣ Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology both in the understanding of the device physics and	Original	PDF	AT-640 AT-414/415 AT-420 Bipolar Junction Transistor 414 rf transistor
Untitled Abstract: No abstract text available Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial	Original	PDF	MSA-0870 MSA-0870 5965-9544E 5968-0528E
HP MMIC INA Abstract: AN-A005 chip die hp transistor mmic ina an-s012 Text: INA Bonding Configurations Application Bulletin 0007 Introduction RF INPUT This Application Bulletin provides assembly information for the INA family of MagICTM MMIC low noise amplifiers. Three chip geometries are covered: INA-01100, INA-02100, and INA-03100.	Original	PDF	INA-01100, INA-02100, INA-03100. INA-02100 AN-S012: INA-03100 5091-9056E HP MMIC INA AN-A005 chip die hp transistor mmic ina an-s012

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	PDF	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
915 MHz RFID Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz	Original	PDF	OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A 5965-8838E 5966-4282E 915 MHz RFID METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
marking code H.5 Sot 23-5 Abstract: FR4 substrate fiberglass HSMS-286C Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz	Original	PDF	OT-323 SC-70) HSMS-285A HSMS-286A OT-323 5965-8838E 5966-4282E marking code H.5 Sot 23-5 FR4 substrate fiberglass HSMS-286C
AT64020 Abstract: AT-64020 Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64020 AT-64020 5965-8915E AT64020
Waveform Clipping With Schottky Abstract: hsms-2802 hp d sOT23 diode for clippers schottky diode cross reference HSMS-2802 HSMS-28X2 HSMS2822 Text: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to	Original	PDF	HSMS-2802 HSMS-2822 5962-9465E Waveform Clipping With Schottky hsms-2802 hp d sOT23 diode for clippers schottky diode cross reference HSMS-28X2 HSMS2822
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Untitled Abstract: No abstract text available Text: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic	OCR Scan	PDF	AT-64023 AT-64023 5965-8916E 0017fc
AT-420 Abstract: No abstract text available Text: H EW LETT' mLlíM PA CK A R D RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature	OCR Scan	PDF	AT-414/415 AT-420
HSMS2851 Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X Text: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/\|iW at 2.45 GHz 22 mV/\|uW at 5.80 GHz	OCR Scan	PDF	HSMS-285X OT-23/ OT-143 5SOT-23 OT-23 OT143 5963-0917E 5963-2333E HSMS2851 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850

HEWLETTPACKARD RF TRANSISTOR Search Results

HEWLETTPACKARD RF TRANSISTOR Result Highlights (5)

HEWLETTPACKARD RF TRANSISTOR Datasheets Context Search

HMXR-5001

ATF-10736

Untitled

high frequency transistor ga as fet

Hewlett-Packard LED

Untitled

transistor s11 s12 s21 s22

AT-41511

a1270* transistor

transistor k 4212 fet

mmic a08

Bipolar Junction Transistor

Untitled

HP MMIC INA

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

915 MHz RFID

marking code H.5 Sot 23-5

AT64020

Waveform Clipping With Schottky

RF transistors with s-parameters

transistor s11 s12 s21 s22

Untitled

AT-420

HSMS2851