Untitled
Abstract: No abstract text available
Text: SN54AC563, SN74AC563 OCTAL DĆTYPE TRANSPARENT LATCHES WITH 3ĆSTATE OUTPUTS SCAS552C − NOVEMBER 1995 − REVISED OCTOBER 2003 D D SN54AC563 . . . J OR W PACKAGE SN74AC563 . . . DB, DW, N, NS, OR PW PACKAGE TOP VIEW 2-V to 6-V VCC Operation Inputs Accept Voltages to 6 V
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SN54AC563,
SN74AC563
SCAS552C
SN54AC563
SN74AC563
AC563
scyd013
sdyu001x
sgyc003d
scyb017a
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Untitled
Abstract: No abstract text available
Text: SN54AC533, SN74AC533 OCTAL TRANSPARENT DĆTYPE LATCHES WITH 3ĆSTATE OUTPUTS SCAS555C − NOVEMBER 1995 − REVISED OCTOBER 2003 D SN54AC533 . . . J OR W PACKAGE SN74AC533 . . . DB, DW, N, NS, OR PW PACKAGE TOP VIEW 2-V to 6-V VCC Operation Inputs Accept Voltages to 6 V
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SN54AC533,
SN74AC533
SCAS555C
SN54AC533
SN74AC533
AC533
scyd013
sdyu001x
sgyc003d
scyb017a
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Untitled
Abstract: No abstract text available
Text: C4D20120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 25.5 A Z-Rec Rectifier Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
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C4D20120A
O-220-2
C4D20120A
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Untitled
Abstract: No abstract text available
Text: ADS7810 ADS 781 12-Bit 800kHz Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION ● 1.25µs THROUGHPUT TIME ● STANDARD ±10V INPUT RANGE The ADS7810 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a complete 12-bit capacitor-based SAR A/D with inherent S/H, reference, clock, interface for microprocessor
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ADS7810
12-Bit
800kHz
250kHz
28-PIN
ADS7810
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teac FD-05hg
Abstract: sis 962 SIS 651 SIS651 FD-05hg Chroma 63030 SiS 651 chipset teac FD 3.5 fd-05hg ene1410 teac FD 5.25
Text: REVISION SHEET TITLE G550 Internal Spec. DCN No. Rev. Originator 000 黃志明 DOCUMENT NO.: 342-3-G550-01 REV.: 0 PAGE : 2 Details of Change Date Original release 5/6/02 Page Rev. Page Rev. 1 32 2 33 3 34 4 35 5 36 6 37 7 38 8 39 9 40 10 41 11 42 12 43 13
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342-3-G550-01
teac FD-05hg
sis 962
SIS 651
SIS651
FD-05hg
Chroma 63030
SiS 651 chipset
teac FD 3.5 fd-05hg
ene1410
teac FD 5.25
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circuit diagram digital blood gas analyzer
Abstract: circuit diagram blood gas analyzer D link schematic circuit diagram adsl modem board circuit diagram blood analyzer glucose monitor schematic MARKING 327 sot23-6 headset mtbf data and video recorder mtbf d link schematic circuit diagram adsl router board marking A75240
Text: YZB-4 DBV-6 www.ti.com PW-8 SN65220 SN65240 SN75240 P-8 SLLS266F − FEBRUARY 1997 − REVISED JULY 2004 USB PORT TRANSIENT SUPPRESSORS FEATURES D Design to Protect Submicron 3-V or 5-V Circuits from Noise Transients APPLICATIONS D USB 1.1 Host, Hub, or Peripheral Ports
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SN65220
SN65240
SN75240
SLLS266F
15-kV
SN65220DBV
SN65220YZB
circuit diagram digital blood gas analyzer
circuit diagram blood gas analyzer
D link schematic circuit diagram adsl modem board
circuit diagram blood analyzer
glucose monitor schematic
MARKING 327 sot23-6
headset mtbf
data and video recorder mtbf
d link schematic circuit diagram adsl router board
marking A75240
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C157C
Abstract: C154A C157 GE C156B sinewave inverter 5000 watt c157a C154 C158 CI57 C354
Text: INVERTER SCR's SELECTOR GUIDE 2000 190 0 1000 1700, 160 0 150 0 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S
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C48/C148
C49/C149
C157C
C154A
C157
GE C156B
sinewave inverter 5000 watt
c157a
C154
C158
CI57
C354
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C159M
Abstract: GE C158N scr 250 amps 2000 Volt C157C CI58 C-48S sine wave inverter pic diode c159t 49/C159N C154A
Text: INVERTER SCR's SELECTOR GUIDE 2 000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S
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C48/C148
C49/C149
C159M
GE C158N
scr 250 amps 2000 Volt
C157C
CI58
C-48S
sine wave inverter pic
diode c159t
49/C159N
C154A
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sine wave ups designing
Abstract: diode c445 SCR TN 22 1500 square wave UPS inverter GE SCR 1000 GE SCR 1000 AMP IC444 C358 C388 C395
Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500
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1100ARMS
SF1154,
G322L
sine wave ups designing
diode c445
SCR TN 22 1500
square wave UPS inverter
GE SCR 1000
GE SCR 1000 AMP
IC444
C358
C388
C395
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GE SCR 1000 AMP
Abstract: diode c648 C648T GE SCR 1000 C358 C385 C388 C395 C398 C648
Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * 300 IO fO o <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500
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SF1154,
G322L
GE SCR 1000 AMP
diode c648
C648T
GE SCR 1000
C358
C385
C388
C395
C398
C648
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scr prx
Abstract: lt742
Text: 74-C 0 1 6 7 1 POUEREX INC ^?4 DeT | T E m t B l D High Speed OQOlt.71 7 Silicon Controlled Rectifier 2 00 0 Volts T-25-20 C612 1150 Amps RMS AM PLIFYING GATE c The General Electric device type C612 is a new pressure mounted, high current SCR designed for power switching at high voltage and high frequen
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T-25-20
MAX/10
scr prx
lt742
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diode c648
Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S
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488BHIIMIÃ
SF1154,
G322L
diode c648
C648
GE SCR 1000 AMP
scr c385 GE
SCR C648
c358
C612
C613
C648E
25C312
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OJ31
Abstract: A4T SOT23 YT-45 MPQ6427
Text: MOTOROLA SC 12E D I tBb?s5M ooatoa? i I XSTRS/R F M A X I M U M R A T IN G S Rating Sym bol Collector-Emitter Voltage MPQ6426 MPQ6427 V cEO Collector-Base Voltage VcBO Vdc 30 40 C A SE 646-06, STYLE 1 TO-116 Vdc 40 50 MPQ6426 MPQ6427 Emitter-Base Voltage Collector Current— Continuous
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MPQ6426
MPQ6427
MPQ6427
O-116
Y14XM,
OJ31
A4T SOT23
YT-45
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1N4564
Abstract: 1N3340 1N2804 1N2846 1N3305 1N3350 1N4549 1N4550 1N4556 1N4557
Text: DE~|b3b7a5S 007Ô0G7 7 MOTOROLA SC -CDIODES/OPTO} T -//- / ? 1N2804 thru 1N2846 MOTOROLA 6.8V thru 200V Case 54-05 SEM ICO NDUCTOR 1N3305 thru 1N3350 TECHNICAL DATA 6.8V thru 200V (Case 58-01) 1N4549thru 1N4556 3.9V thru 7.5V (Case 58-01) 1N4557thru 1N4564
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DIODES/0PT03-
resist15
1N4564
1N3340
1N2804
1N2846
1N3305
1N3350
1N4549
1N4550
1N4556
1N4557
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1n2620
Abstract: 1N4564 1N2625 1N2613 1N2626 in2819 1N2804 1N2846 1N3305 1N3350
Text: MOTOROLA SC { D I O D E S / O P T O * D E~|b3 b 7 a 5 S 0 0 7 Ô0 G7 T -//- / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549 thru 1N4556 1N4557thru 1N4564 6.8V thru 200V Case 54-05 6.8V thru 200V (Case 58-01) 3.9V thru 7.5V (Case 58-01)
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4053B
Abstract: 40538 demultiplexer 4000B
Text: 4053B TRIPLE 2-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER D E SC R IP TIO N — The 4053B is a Triple 2-Channel Analog M ultiplexer/Dem ultiplexer with a common Enable Input E . Each M ultiplexer/D em ultiplexer has tw o Independent Inputs/Outputs (Y 0 ,Y>|), a
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4053B
4053B
4000B
40538
demultiplexer
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DL 4770
Abstract: D0205AB International Rectifier SSC
Text: 4855452 INTERNATIONAL RECTIFIER IQ R "□s 02E 07900 D 7“ -¿>.3-«2/ Data Sheet NO. PU-2.104 in t e r n a t io n a l r e c t if ie r DE I 4fl5545E □□D7ÌG0 1 | R23DF AND R23DFR SERIES 2400-2200 VOLTS RANGE REVERSE RECOVERY TIME 2.75//S 135 AMP AVG STUD MOUNTED
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07C1G0
R23DF
R23DFR
75//s
R230FR
a400v>
RBXFR248.
D0-205AB
DL 4770
D0205AB
International Rectifier SSC
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C702 diode
Abstract: c712pn C702 C712 C712L C712PE C712PM C712PS C712PT RS-397
Text: IN VERTER SCR's SELECTO R GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 RMS CURRENT-AMPERES 700 800 850
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Untitled
Abstract: No abstract text available
Text: * HEX D-LATCH SYNERGY SY100S350 SEMICONDUCTOR FEATURES DESCRIPTION Max. transparent propagation delay of 900ps Min. Master Reset and Enable pulse widths of 100ps Iee min. o f-98 m A Industry standard 100K ECL levels Extended supply voltage option: V ee = -4.2V to -5.5V
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SY100S350
900ps
100ps
SY100S350
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Untitled
Abstract: No abstract text available
Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Iee min. o f-6 0 m A Extended supply voltage option: V ee = -4 .2 V to -5 .5 V The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This
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SY100S304
1050ps
SY100S304
75Ki2
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diode ba 241
Abstract: rd100ifp 4069 NOT GATE IC 28-UNF-2A
Text: PACKAGE DIMENSIONS 3/4” PF Isolated TO-5 (Non-lsolated) 3/4” PFS (Isolated) 3/4” PF/T03 (Isolated) CASE TEM PERA TU RE " M EA S U R E M EN T POIN T •+-CASI TEMPERATURE 1 - * MEASUREMENT POIN1 iS AT THE GENTE R OF BASE , U 0 MOUSIN G HARDWARE
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PF/T03
diode ba 241
rd100ifp
4069 NOT GATE IC
28-UNF-2A
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General electric SCR c39
Abstract: c180 scr C180 C380 C380A C380B C380C C380D C380E C390
Text: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C
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TL 0621 P
Abstract: t4 0560 c TL 0621 N T4 0560 M39006/22-02S1
Text: I CLR79 MIL-C-39006/22 Wet Tantalum Capacitors M allorY All Tantalum Case Hermetically Sealed GENERAL SPECIFICATIONS Up to 3 Volts Reverse Capability Operating Temperature: -55°C to +125°C Higher Ripple Current Capability Voltage Range: 6 to 125 VDC Capacitance Range:
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CLR79
MIL-C-39006/22)
CLR79
M39006/22-0251
CLR790251.
CLR790251H)
1284/Indianapolis
46206-1284/Phone:
273-0090/Fax:
TL 0621 P
t4 0560 c
TL 0621 N
T4 0560
M39006/22-02S1
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C440
Abstract: C440E C440M C440N C440S C440T C441 C601 C602 C701
Text: PHASE CONTROL SCR's 2 7 6 .1 276 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . M a x . average on-state c urrent @ 1 8 0 ° T (A V ) conduction (A ) @ T q , C602 C 601 C 441 C440 C 701 C 702 1 7 0 0 -2 6 0 0
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