HER102G
Abstract: HER104G HER106G HER108G HER10X
Text: HER10xG Series Features: • • • • • • Glass passivated chip junction. High efficiency, low VF. High current capability. High reliability. High surge current capability. For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
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HER10xG
DO-41
DO-41.
MIL-STD-202,
HER102G
HER104G
HER106G
HER108G
HER10X
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HER 300 diode
Abstract: 101G 103G 105G 106G HER101G HER108G her105g diode
Text: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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HER101G
HER108G
DO-41,
MIL-STD-202,
DO-41
HER 300 diode
101G
103G
105G
106G
HER101G
HER108G
her105g diode
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Untitled
Abstract: No abstract text available
Text: HER101G - HER108G 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inverter,
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HER101G
HER108G
DO-41
MIL-STD-202,
HER101GIFICATIONS
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Untitled
Abstract: No abstract text available
Text: HER101G - HER108G Pb 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor,
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PDF
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HER101G
HER108G
DO-41
DO-41
MIL-STD-202,
HER105G
HER101G-HER104G
HER106G-HER108G
HER101G-HER105G
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Untitled
Abstract: No abstract text available
Text: HER101G thru HER108G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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HER101G
HER108G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
AEC-Q101
JESD22-B102
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Untitled
Abstract: No abstract text available
Text: HER101G thru HER108G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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Original
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PDF
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HER101G
HER108G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
AEC-Q101
JESD22-B102
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Untitled
Abstract: No abstract text available
Text: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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Original
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PDF
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HER101G
HER108G
DO-41,
MIL-STD-202,
DO-41
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Untitled
Abstract: No abstract text available
Text: HER101G - HER108G 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inverter,
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Original
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PDF
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HER101G
HER108G
DO-41
MIL-STD-202,
260/10s
HER10xG
DO-41
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Untitled
Abstract: No abstract text available
Text: HER101G - HER108G 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inverter,
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Original
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PDF
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HER101G
HER108G
DO-41
MIL-STD-202,
260/10s
HER10xG
DO-41
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High Efficient Rectifiers
Abstract: No abstract text available
Text: HER101-HER108 1.0AMP. High Efficient Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
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PDF
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HER101-HER108
DO-41
DO-41
50Vdc
HER10x
HER10xG
High Efficient Rectifiers
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Untitled
Abstract: No abstract text available
Text: HER101G - HER108G 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inverter,
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Original
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PDF
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HER101G
HER108G
DO-41
MIL-STD-202,
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101G
Abstract: 103G HER101G HER108G
Text: HER101G - HER108G TAIWAN SEMICONDUCTOR Pb 1.0 AMP. Glass Passivated High Efficient Rectifiers DO-41 RoHS COMPLIANCE . 1 0 7 2 . 7 .080 (2 . 0 ) DIA. 1 . 0 (2 5 . 4 ) MIN. Features •> <>- •> -v- ■> -v- Glass passivated chip junction. High efficiency, Low VF
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OCR Scan
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PDF
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HER101G
HER108G
DO-41
DO-41
MIL-STD-202,
HER101
50Vde
101G
103G
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smm 300
Abstract: 101G 103G HER101G HER108G
Text: % HER101G - HER108G TAIWAN SEMICONDUCTOR 1.0AMP. Glass Passivated High Efficient Rectifiers RoHS DO-41 COMPLIANCE -S2I- .107 2 .7 .080 (2 .0 ) 1.0 ( 25.4 ) MIN. DIA. F e a tu re s 4-v* <0* > 4- U l Glass passivated chip junction. High efficiency, Low V F
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OCR Scan
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PDF
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HER101G
HER108G
DO-41
HER10X0
UL94V-Orate
MIL-STD-202,
smm 300
101G
103G
HER108G
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