Untitled
Abstract: No abstract text available
Text: HER101 thru HER108 High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes
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HER101
HER108
DO-41,
MIL-STD-750,
DO-201ADç
D0-201AD
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PDF
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER501 - HER508 HIGH EFFICIENT RECTIFIER DIODES
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HER501
HER508
DO-201AD
DO-201AD
UL94V-O
HER501-HER505
HER506-HER508
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PDF
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER251 - HER258 HIGH EFFICIENT RECTIFIER DIODES
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HER251
HER258
UL94V-O
HER251-HER255
HER256-HER258
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PDF
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HER 107 diode
Abstract: HER101 HER108
Text: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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Original
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HER101
HER108
DO-41
UL94V-O
MIL-STD-202,
HER101-HER105
HER106-HER108
HER 107 diode
HER108
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PDF
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Untitled
Abstract: No abstract text available
Text: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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Original
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HER101
HER108
DO-41
UL94V-O
MIL-STD-202,
HER101-HER105
HER106-HER108
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PDF
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com HER101 - HER108 IATF 0113686 SGS TH07/1033 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current
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Original
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TH09/2479
TH97/2478
HER101
HER108
TH07/1033
DO-41
UL94V-O
MIL-STD-202,
HER101-HER105
HER106-HER108
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PDF
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HER101
Abstract: HER108
Text: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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Original
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HER101
HER108
DO-41
UL94V-O
MIL-STD-202,
AND12
HER101-HER105
HER106-HER108
HER108
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PDF
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Untitled
Abstract: No abstract text available
Text: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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Original
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HER101
HER108
DO-41
UL94V-O
MIL-STD-202,
HER101-HER105
HER106-HER108
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PDF
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Untitled
Abstract: No abstract text available
Text: HER101 – HER108 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes
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Original
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HER101
HER108
DO-41,
MIL-STD-202,
DO-41
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PDF
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Untitled
Abstract: No abstract text available
Text: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic
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HER101
HER108
DO-41,
MIL-STD-202,
DO-41
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PDF
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HER 107 diode
Abstract: DIODE HER108 HER 103 diode Diode HER 107 HER101 HER101-T3 HER101-TB HER104 HER105 HER108
Text: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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Original
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HER101
HER108
DO-41,
MIL-STD-202,
DO-41
HER 107 diode
DIODE HER108
HER 103 diode
Diode HER 107
HER101
HER101-T3
HER101-TB
HER104
HER105
HER108
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PDF
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HER104
Abstract: HER101 HER105 HER106M VR50 HER101M HER104-HER105
Text: MOSPEC HER101 Thru HER105 Switchmode Power Rectifiers ULTRAFAST RECTIFIERS Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 1.0 AMPERES 50-400 VOLTS ＊High Surge Capacity
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HER101
HER105
HER101M
HER106M
DO-41
ER101
HER101-HER103
HER104-HER105
HER104
HER105
HER106M
VR50
HER104-HER105
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PDF
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mospec 2sa
Abstract: HER101 HER105
Text: Bk MOSPEC HER101 thru HER105 Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS . Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: * * * * * * * * 1.0 AMPERES
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OCR Scan
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HER101
HER105
mospec 2sa
HER105
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PDF
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER101 - HER108 HIGH EFFICIENT
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HER101
HER108
DO-41
UL94V-O
HER101-HER105
HER106-HER108
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.0A * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching
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Original
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HER101
HER108
DO-41
DO-15
DO-201AD
26mm/TYPE
52mm/TYPE
DO-41
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PDF
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER301 - HER308 HIGH EFFICIENT
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HER301
HER308
DO-201AD
DO-201AD
UL94V-O
flam120
HER301-HER305
HER306-HER308
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PDF
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER151 - HER158 HIGH EFFICIENT
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HER151
HER158
DO-41
UL94V-O
HER151-HER155
HER156-HER158
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PDF
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A-405
Abstract: HER101 HER108
Text: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * Ideally suited for use in very high frequency switching
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Original
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HER101
HER108
DO-41,
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
A-405
HER108
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PDF
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Untitled
Abstract: No abstract text available
Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH15S120
PG-TO220-2
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PDF
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Untitled
Abstract: No abstract text available
Text: IDH10S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 36 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH10S120
PG-TO220-2
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PDF
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21n60G
Abstract: FMW21N60G 21N60 HER 103 diode
Text: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any
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FMW21N60G
MS5F5934
H04-004-05
H04-004-03
21n60G
FMW21N60G
21N60
HER 103 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 27 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH08S120
PG-TO220-2
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PDF
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Untitled
Abstract: No abstract text available
Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDH08S60C
PG-TO220-2
D08S60C
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PDF
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D12G60
Abstract: diode smd ED 17
Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDD12SG60C
20mA2)
D12G60
diode smd ED 17
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PDF
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