Untitled
Abstract: No abstract text available
Text: HEP series 125℃ Super Low ESR・High Reliability • Specifications Items Rated voltage (V) Surge voltage (V) Category temperature range (℃) Capacitance tolerance
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120Hz/20â
500hrs.
000hrs.
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Untitled
Abstract: No abstract text available
Text: HEP series 125℃ Super Low ESR・High Reliability • Specifications Items Rated voltage (V) Surge voltage (V) Category temperature range (℃) Capacitance tolerance
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120Hz/20â
500hrs.
000hrs
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J1772
Abstract: ITT Cannon J1772 SAE J1772 veam SAE-J1772 ITT 25 contact ITT Interconnect DSASW00214064 d-sub backshell HEP transistors
Text: Interconnect Solutions Cannon, VEAM, BIW Delivering the Industry’s first, UL Rated, J1772 Level 2 “75 AMP” Less than Four Hour Charging Solution UL Recognized – Level 2 75Amp Charging With the recent release of the SAE Electric Vehicle J1772 charging specification in 2010,
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J1772
75Amp
ITT Cannon J1772
SAE J1772
veam
SAE-J1772
ITT 25 contact
ITT Interconnect
DSASW00214064
d-sub backshell
HEP transistors
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HEP transistors
Abstract: SPRU511 TMS320C55x CSL USB usb 3 datasheet usb control chip C5502 TMS320C5000 C55X IER0
Text: TMS320C55x CSL USB Programmer’s Reference Guide SPRU511 October 2001 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
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TMS320C55x
SPRU511
HEP transistors
SPRU511
TMS320C55x CSL USB
usb 3 datasheet
usb control chip
C5502
TMS320C5000
C55X IER0
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OPA03
Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
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OPA03
Abstract: OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation
Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
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4169B
OPA03
OPA02
128 x 1 multiplexer
hep silicon diode
DMILL
BGP02
calorimeter sensor CIRCUIT
inverter grade SCR
BGP01
digital SUN SENSOR cmos detector space radiation
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NF800-CEP
Abstract: NF1250-SS DSN40 no-fuse Circuit breaker Mitsubishi
Text: MITSUBISHI ELECTRIC Low Voltage Switchgears Moulded-Case Circuit Breakers Disconnectors WSS, PSS & Super Series 3 A – 1600 A Technical Catalogue 2004 AUDIN - 8, avenue de la malle - 51370 Saint Brice Courcelles - Tel : 03.26.04.20.21 - Fax : 03.26.04.28.20 - Web : http: www.audin.fr - Email : info@audin.fr
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RU-344041
ZA-1600
133207-D
D-40880
NF800-CEP
NF1250-SS
DSN40
no-fuse Circuit breaker Mitsubishi
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smd hee
Abstract: No abstract text available
Text: SMD TVS - 3000W 3000 W Part No. Uni-Polar 3.0SMCJ5.0A 3.0SMCJ6.0A 3.0SMCJ6.5A 3.0SMCJ7.0A 3.0SMCJ7.5A 3.0SMCJ8.0A 3.0SMCJ8.5A 3.0SMCJ9.0A 3.0SMCJ10A 3.0SMCJ11A 3.0SMCJ12A 3.0SMCJ13A 3.0SMCJ14A 3.0SMCJ15A 3.0SMCJ16A 3.0SMCJ17A 3.0SMCJ18A 3.0SMCJ20A 3.0SMCJ22A
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0SMCJ10A
0SMCJ11A
0SMCJ12A
0SMCJ13A
0SMCJ14A
0SMCJ15A
0SMCJ16A
0SMCJ17A
0SMCJ18A
0SMCJ20A
smd hee
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Untitled
Abstract: No abstract text available
Text: SMDJ SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSOR – SMDJ SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance.
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SMC/DO-214AB
DO214AC.
MIL-STD-750,
ColoJ170CA
SMDJ180A
SMDJ180CA
SMDJ190A
SMDJ190CA
SMDJ200A
SMDJ200CA
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smdj15
Abstract: No abstract text available
Text: SMDJ SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSOR – SMDJ SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance.
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SMC/DO-214AB
DO214AC.
MIL-STD-750,
SMDJ170CA
SMDJ180A
SMDJ180CA
SMDJ190A
SMDJ190CA
SMDJ200A
SMDJ200CA
smdj15
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hep 154
Abstract: 22 HFK 189 hep 581 HEP 208 marking IGF 3.0SMCJ Series ifx 177 hep 177
Text: World Products Inc. | Transient Voltage Suppression Diodes | 3.0SMCJ Series Page 1 of 5 Transient Voltage Suppression Diodes 3.0SMCJ Series Surface Mount 3000 Watt Specifications Features | Absolute Maximum Ratings | Mechanical Characteristics | Mechanical Dimensions | Standard Mounting Pad Layout | Electrical Characteristics
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E135015
RS-481-A
0SMCJ170A
30SMCJ
hep 154
22 HFK 189
hep 581
HEP 208
marking IGF
3.0SMCJ Series
ifx 177
hep 177
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smd hee
Abstract: smdj18ca
Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 3000 Watt Peak Power ■ Dimension Dim SMD DO-214AB ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 6.60 7.11 0.260 0.280 B 5.59 6.22 0.220
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DO-214AB)
SMDJ130A
SMDJ130CA
SMDJ150
SMDJ150C
SMDJ150A
SMDJ150CA
SMDJ160
SMDJ160C
SMDJ160A
smd hee
smdj18ca
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marking hdv
Abstract: No abstract text available
Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 3000 Watt Specifications - 3.0SMCJ Series Electrical Characteristics Part Number* 3.0SMCJ5.0 3.0SMCJ5.0A 3.0SMCJ6.0
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0SMCJ10
0SMCJ10A
0SMCJ11
0SMCJ11A
0SMCJ12
0SMCJ12A
0SMCJ13
0SMCJ13A
0SMCJ14
0SMCJ14A
marking hdv
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Untitled
Abstract: No abstract text available
Text: 3.0SMCJ5.0-LF THRU 3.0SMCJ170A-LF 3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 GLASS PASSIVATED JUNCTION LOW PROFILE EXCELLENT CLAMPING CAPABILITY LOW INCREMENTAL SURGE RESISTANCE
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0SMCJ170A-LF
0SMCJ100
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Abstract: No abstract text available
Text: TVS DIODES 3.0SMCJ Series — 3000 Watt Surface Mount 3.0SMCJ Series Features • 3000 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
DO214AB
UL94V-0
MIL-STD-750
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SN74AUP1G08DPWR
Abstract: DPW0005A-C01 SN74AUP1GXX SN74AUP1G08-Q1
Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software SN74AUP1G08 SCES502O – NOVEMBER 2003 – REVISED JUNE 2014 SN74AUP1G08 Low-Power Single 2-Input Positive-AND Gate 1 Features • 1 • • • • • • • • • •
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SN74AUP1G08
SCES502O
SN74AUP1G08
SN74AUP1G08DPWR
DPW0005A-C01
SN74AUP1GXX
SN74AUP1G08-Q1
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marking code HFr
Abstract: HEP 311
Text: 3.0SMCJ SERIES LITE-ON SEMICONDUCTOR Bi-Directional device is under development SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 3000 WATTS FEATURES For surface mounted applications
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0SMCJ130A
0SMCJ130CA
0SMCJ150A
0SMCJ150CA
0SMCJ160A
0SMCJ160CA
0SMCJ170A
0SMCJ170CA
marking code HFr
HEP 311
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HEP 580
Abstract: No abstract text available
Text: Data Sheet 5 .0 V to 220 V S M D T R A N S I E N T V O LT A G E S U P P R E S S O R S M e c ha nic a l Dim e ns ions De s c ription 3 .0 S MC J 5 .0 . . . 220 TVS Device Load DO-214AB SMC Uni-Polar TVS Device Load Bi-Polar F e a ture s n 1500 WAT T P E AK P OWE R P R OT E C T ION
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DO-214AB
0SMCJ220A
300us
HEP 580
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ifr 150
Abstract: hep 232 HFZ 027 marking igk marking hdv
Text: TVS DIODES 3.0SMCJ Series — 3000 Watt Surface Mount 3.0SMCJ Series Features • 3000 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
ifr 150
hep 232
HFZ 027
marking igk
marking hdv
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hep 154 diode
Abstract: SMLJ11CA SMLJ100A SMLJ10A SMLJ10CA SMLJ11A SMLJ12A SMLJ170A SMLJ90A SMC 2060
Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 3000 watts SMLJ Transient Voltage Suppressor Diode Series
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DO-214AB
RS-481-A
DO-214AB)
hep 154 diode
SMLJ11CA
SMLJ100A
SMLJ10A
SMLJ10CA
SMLJ11A
SMLJ12A
SMLJ170A
SMLJ90A
SMC 2060
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hep 154
Abstract: HFZ 027 marking IGF
Text: TVS Diodes 3.0SMCJ Series — 3000 Watt Surface Mount 3.0SMCJ Series Features • RoHS Compliance designated by suffix “F” • 3000 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction
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E135015
RS-481-A
DO214AB
UL94V-0
MIL-STD-750
hep 154
HFZ 027
marking IGF
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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Untitled
Abstract: No abstract text available
Text: 3 0 0 0 W A T T S U R F A C E M O U N T 3.0SM CJ Series Features • ■ ■ ■ 3 0 0 0 watt peak pulse power dissipation Available in voltages from 5.0V to 170V Unidirectional and bidirectional Glass passivated junction ■ ■ Low clamping factor Each device 100% surge tested
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0SMCJ160
0SMCJ160A
0SMCJ170
0SMCJ170A
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