Untitled
Abstract: No abstract text available
Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
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fet transistor a03
Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain
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MGFC4419G
MGFC4419G
12GHz
fet transistor a03
MGFC4419
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GaAs FET HEMT Chips
Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)
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MGFC4453A
MGFC4453A
12GHz
25pcs
GaAs FET HEMT Chips
on 5295 transistor
transistor on 4436
InGaAs HEMT mitsubishi
low noise x band hemt transistor
fet transistor a03
FET Spec sheet
transistor on 5295
5458 transistor
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2SK676
Abstract: GaAs FET HEMT Chips
Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high
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2SK676H5
2SK676H
2SK676
GaAs FET HEMT Chips
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TRW mmic
Abstract: No abstract text available
Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for
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TLH124C
TLH124C
90-degree
50-ohm
9701455-S-J1
TRW mmic
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Untitled
Abstract: No abstract text available
Text: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm
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Untitled
Abstract: No abstract text available
Text: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm
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FHX35LG
Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.
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FHX35X/002
FHX35LG/002
FHX35X/002
FHX35LG/002
FCSI0598M200
FHX35LG
FHX35
fujitsu hemt
fujitsu gaas fet
hemt low noise die
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ATF-38143
Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features Surface Mount Package SOT-343 • Low Noise Figure Description Agilent Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead
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ATF-38143
OT-343
SC-70
OT-343)
SC-70)
ATF-38143
5968-7868E
ATF-38143-BLK
ATF-38143-TR1
ATF-38143-TR2
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low noise amplifier ghz
Abstract: amplifier 1 2 ghz
Text: HMC-ALH482 AMPLIFIERS - LOW NOISE - CHIP v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz
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HMC-ALH482
HMC-ALH482
low noise amplifier ghz
amplifier 1 2 ghz
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FHX35
Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.
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FHX35X/002
FHX35LG/002
FHX35X/002
FHX35LG/002
Co4888
FHX35
eudyna
FHX35LG
hemt low noise die
fujitsu gaas fet
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HMC-ALH444
Abstract: ALH444 hemt 20 dB 14 ghz GaAs 12 GHZ gain noise gate compression
Text: HMC-ALH444 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems
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HMC-ALH444
HMC-ALH444
ALH444
hemt 20 dB 14 ghz
GaAs 12 GHZ gain
noise gate compression
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MGF4310
Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.
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MGFC4410
MGF4310
MGF4910
200um
8E-30
MGF4914E-01
MGF4918E-01
12GHz,
MGF4914C
MGF4318E-01
MGF4918D
MGF4914
MGF4917
MGFC4418
MGFC4416
MGF4318
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Untitled
Abstract: No abstract text available
Text: HMC-ALH482 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz
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HMC-ALH482
HMC-ALH482
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Untitled
Abstract: No abstract text available
Text: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz
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HMC-ALH482
HMC-ALH482
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Untitled
Abstract: No abstract text available
Text: HMC-ALH482 v00.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz
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HMC-ALH482
HMC-ALH482
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Untitled
Abstract: No abstract text available
Text: HMC-ALH482 v03.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz
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HMC-ALH482
HMC-ALH482
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sony 0642
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron
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2SK677H5
2SK677H5
D0G312b
sony 0642
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amplifier schematic diagram SHARP
Abstract: HMC-ALH444
Text: HMC-ALH444 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems
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HMC-ALH444
HMC-ALH444
amplifier schematic diagram SHARP
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alh444
Abstract: HMC-ALH444
Text: HMC-ALH444 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems
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HMC-ALH444
HMC-ALH444
alh444
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Untitled
Abstract: No abstract text available
Text: HMC-ALH444 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems
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HMC-ALH444
HMC-ALH444
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HMC-ALH445
Abstract: No abstract text available
Text: HMC-ALH445 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Typical Applications Features This HMC-ALH445 is ideal for: Noise Figure: 3.9 dB @ 28 GHz • Wideband Communication Systems Gain: 9 dB • Point-to-Point Radios
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HMC-ALH445
HMC-ALH445
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HMC-ALH444
Abstract: No abstract text available
Text: HMC-ALH444 v03.0410 AMPLIFIERS - LOW NOISE - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems
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HMC-ALH444
HMC-ALH444
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