AN11130
Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
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CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
AN11130
Micro-coax UT
UT-062C-18
LR12010T0200J
RL7520WT-R005-f
Micro-coax UT-062C-18
RL7520WT-R005
Z5 1512
1001G00
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30221
Abstract: LR12010T0200J
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
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CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
30221
LR12010T0200J
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Untitled
Abstract: No abstract text available
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
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CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
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bc857b nxp
Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
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CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
bc857b nxp
C5750X7S2A106M
Gan transistor
C 1972 transistor
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Untitled
Abstract: No abstract text available
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
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CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
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Untitled
Abstract: No abstract text available
Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035S-100
CLF1G0035S-100
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100B102KW
Abstract: AN11130 66-0304-00004-000 600F0R 96798
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
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CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
100B102KW
AN11130
66-0304-00004-000
600F0R
96798
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I1228
Abstract: No abstract text available
Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035-100
CLF1G0035-100
I1228
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Untitled
Abstract: No abstract text available
Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035S-50
CLF1G0035S-50
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
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atc100a150
Abstract: power transistor gan s-band
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
atc100a150
power transistor gan s-band
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Untitled
Abstract: No abstract text available
Text: RF3928 280W GaN Wideband Pulsed Power Amplifier Package: Hermetic 2-Pin, Flanged Ceramic Features • Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions
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RF3928
RF3928
DS130514
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TDMA simulation ADS
Abstract: ATF-50189 BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305
Text: ATF-50189 High Linearity 900 MHz Amplifier Avago Technologies Enhancement Mode Psuedomorphic HEMT in SOT 89 Package Application Note 5293 Introduction Application Guidlines Avago Technologies ATF-50189 is an enhancement mode PHEMT designed for high linearity and medium
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ATF-50189
800MHz
900MHz
2400MHz
900MHz
AV01-0365EN
TDMA simulation ADS
BTS 3900 a
C7-15PF
ATF0189
ATF050189
ATF-501P8
ATF-54143
GSM900
msu 305
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RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
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GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS120202
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RF3931
Abstract: 46dBm
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
RF3931
DS110317
46dBm
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fet transistor a03
Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain
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MGFC4419G
MGFC4419G
12GHz
fet transistor a03
MGFC4419
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MGF4314E
Abstract: MGF4319E MGF4318E low noise x band hemt transistor MGF4310E gd 361 transistor gs 431 transistor mgf431 TRANSISTOR 132-gd
Text: bSLHaaT O G l T f l ? 1} S O I • MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4310E Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 3 1 0E OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to
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MGF4310E
12GHz
MGF4314E:
MGF4318E:
MGF4319E:
Unit132
DD17flflS
MGF4314E
MGF4319E
MGF4318E
low noise x band hemt transistor
gd 361 transistor
gs 431 transistor
mgf431
TRANSISTOR 132-gd
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LR 120N
Abstract: M62260FP avr qt 6ka transistor
Text: MITSUBISHI Dig./Ana. INTERFACE M62260FP CS / BS CONVERTER DRIVER IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) M62260FP is developed to be a 2-channel HEMT driver. Capable of simplifying the peripheral circuits, this 1C permits com pact unitized design.
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M62260FP
M62260FP
LR 120N
avr qt
6ka transistor
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