HE8811 2008 Search Results
HE8811 2008 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPN12008QM |
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MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance |
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20083EB0BD |
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Elite Backplane connectors, DO 8pair, 12position, NiS |
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HPH2-0083LD |
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General Purpose Inductor, 8.3uH, 10%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT |
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HP2-0083LB |
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General Purpose Inductor, 4.1uH, 10%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT |
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HP2-0083LD |
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General Purpose Inductor, 4.1uH, 10%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT |
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HE8811 2008 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Untitled
Abstract: No abstract text available
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Original |
HE8811 ODE-208-051A HE8811 HE8811: | |
HE8811 2008
Abstract: HE8811
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Original |
HE8811 HE8811 ODE2062-00 HE8811: HE8811 2008 | |
laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
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Original |
200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package | |
LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
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OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G |