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    HLB123D

    Abstract: HLB123 pt 1017
    Text: HI-SINCERITY Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2005.08.16 Page No. : 1/5 MICROELECTRONICS CORP. HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications.


    Original     		PDF HE6603 HLB123D HLB123D O-126ML 183oC 217oC 260oC HLB123 pt 1017

    HLB123D

    Abstract: PT 1017
    Text: HI-SINCERITY Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 1/4 MICROELECTRONICS CORP. HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications.


    Original     		PDF HE6603 HLB123D HLB123D O-126ML PT 1017