H2N6517
Abstract: H2N6520
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 1/3 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
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HE6274-B
H2N6520
H2N6520
H2N6517
H2N6517
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H2N6427
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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Original
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HE6274-B
H2N6427
H2N6427
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H2N6517
Abstract: H2N6520
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
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Original
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PDF
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HE6274
H2N6520
H2N6520
H2N6517
183oC
217oC
260oC
H2N6517
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DARLINGTON TIN
Abstract: H2N6427 Darlington transistor to 92
Text: HI-SINCERITY Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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Original
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PDF
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HE6274
H2N6427
183oC
217oC
260oC
DARLINGTON TIN
H2N6427
Darlington transistor to 92
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