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    H2N6517

    Abstract: H2N6520
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages.


    Original     		PDF HE6268 H2N6517 H2N6517 H2N6520 183oC 217oC 260oC H2N6520

    H2N6517

    Abstract: H2N6520
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 1/4 H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages.


    Original     		PDF HE6268-B H2N6517 H2N6517 H2N6520 H2N6520