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    HAT2200WP Search Results

    HAT2200WP Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2200WP-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 20A 28Mohm Wpak Visit Renesas Electronics Corporation

    HAT2200WP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT2200WP Renesas Technology MOSFET, Switching; VDSS (V): 100; ID (A): 20; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: 0.023 (8V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -2390; toff ( us) typ: -; Package: WPAK Original PDF

    HAT2200WP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2200WP

    Abstract: HAT2200WP-EL-E
    Text: HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0300 Rev.3.00 May 27, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A


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    PDF HAT2200WP REJ03G1678-0300 PWSN0008DA-A HAT2200WP HAT2200WP-EL-E

    HAT2200WP

    Abstract: HAT2200WP-EL-E
    Text: Preliminary Datasheet HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0310 Rev.3.10 May 13, 2010 Features •    Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 m typ. (at VGS = 10 V)


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    PDF HAT2200WP REJ03G1678-0310 PWSN0008DA-A te9044 HAT2200WP HAT2200WP-EL-E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0310 Rev.3.10 May 13, 2010 Features •    Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 m typ. (at VGS = 10 V)


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    PDF HAT2200WP REJ03G1678-0310 PWSN0008DA-A tempera9044

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    HAT1128R

    Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
    Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response


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    PDF RJK0305DPB RJK0331DPB) HAT2188WP RJK2055DPA RJK2057DPA HAT2191WP HAT2192WP HAT2193WP RJK2555DPA RJK2557DPA HAT1128R RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


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    PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


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    PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as