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    Part ECAD Model Manufacturer Description Download Buy
    HAT2175H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 15A 42Mohm Lfpak Visit Renesas Electronics Corporation
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    HAT2175H Price and Stock

    Renesas Electronics Corporation HAT2175H-EL-E

    MOSFET N-CH 100V 15A LFPAK
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    HAT2175H Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HAT2175H Renesas Technology Silicon N-Channel MOS FET Original PDF
    HAT2175H Renesas Technology MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 15; RDS (ON) typ. (ohm) @10V: 0.033; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1445; toff ( us) typ: 0.028; Package: LFPAK Original PDF
    HAT2175H-EL-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15A 5LFPAK Original PDF

    HAT2175H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2175H

    Abstract: No abstract text available
    Text: HAT2175H Silicon N Channel Power MOS FET Power Switching REJ03G0006-0400 Rev.4.00 Sep 20, 2005 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A)


    Original     		PDF HAT2175H REJ03G0006-0400 PTZZ0005DA-A) HAT2175H

    HAT2175H

    Abstract: No abstract text available
    Text: HAT2175H Silicon N Channel Power MOS FET Power Switching REJ03G0006-0300Z Rev.3.00 Apr.14.2003 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 33 mΩ typ. (at VGS = 10 V) Outline LFPAK


    Original     		PDF HAT2175H REJ03G0006-0300Z HAT2175H

    DNP resistors

    Abstract: AN1459 V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE
    Text: ISL8107EVAL2Z Application Note June 9, 2009 AN1459.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107


    Original     		PDF ISL8107EVAL2Z AN1459 ISL8107 ISL8107 com/data/fn/fn6605 ISL8107EVAL2Z DNP resistors V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE

    RJ102

    Abstract: HA16163T Nihon Inter Electronics CHIP DIODE m7 NIHON PULSE rj101 rohm M7 RJ105 diode m7 toshiba HAT2175H
    Text: HA16163T DC-DC Converter Evaluation Board HA16163 EVB2.0 480 kHz, 48 V, 3.3 V, 100 W Isolated power supply Application Note REJ05F0002-0100Z (Previous: ADE-504-008(Z) Rev.1.00 Apr.22.2003 Renesas Technology Corp. Cautions Keep safety first in your circuit designs!


    Original     		PDF HA16163T HA16163 REJ05F0002-0100Z ADE-504-008 2SB1188 HA16163T RJ102 Nihon Inter Electronics CHIP DIODE m7 NIHON PULSE rj101 rohm M7 RJ105 diode m7 toshiba HAT2175H

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjk5020

    Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
    Text: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment


    Original     		PDF HA16174 HA16158 HA16341 HA16342 HA16167 rjk5020 HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    HAT2175H

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as

    HAT2175H

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF