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    HAT2173H Search Results

    HAT2173H Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2173H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 25A 15Mohm Lfpak Visit Renesas Electronics Corporation
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    HAT2173H Price and Stock

    Renesas Electronics Corporation HAT2173HWS-E

    MOSFET N-CH 100V 25A 5LFPAK
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    Renesas Electronics Corporation HAT2173H-EL-E

    MOSFET N-CH 100V 25A LFPAK
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    HAT2173H-EL-E Cut Tape 1
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    HAT2173H-EL-E Digi-Reel 1
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    Bristol Electronics HAT2173H-EL-E 115
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    Avnet Asia HAT2173H-EL-E 26 Weeks 2,500
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    Chip-Germany GmbH HAT2173H-EL-E 21
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    Win Source Electronics HAT2173H-EL-E 12,700
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    Renesas Electronics Corporation HAT2173H-EL

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    Bristol Electronics HAT2173H-EL 2,500
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    HAT2173H Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT2173H Renesas Technology Silicon N-Channel MOS FET Original PDF
    HAT2173H Renesas Technology MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff ( us) typ: 0.037; Package: LFPAK Original PDF
    HAT2173H-EL-E Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    HAT2173H-EL-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 25A LFPAK Original PDF

    HAT2173H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HAT2173H-EL-E

    Abstract: HAT2173H
    Text: HAT2173H Silicon N Channel Power MOS FET Power Switching REJ03G0030-0200 Rev.2.00 Sep 26, 2005 Features • • • • • High speed switching Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 12 mΩ typ. (at VGS = 10 V)


    Original     		HAT2173H REJ03G0030-0200 PTZZ0005DA-A) HAT2173H-EL-E HAT2173H PDF

    HAT2173H

    Abstract: RG 58 AU
    Text: HAT2173H Silicon N Channel Power MOS FET Power Switching REJ03G0030-0100Z Rev.1.00 May.06.2003 Features • • • • Capable of 8V gate drive Low drive current High density mounting Low on-resistance RDS on = 12 mΩ typ. (at VGS = 10 V) Outline LFPAK


    Original     		HAT2173H REJ03G0030-0100Z HAT2173H RG 58 AU PDF

    Untitled

    Abstract: No abstract text available
    Text: Using the UCC28230EVM User's Guide Literature Number: SLUU331 July 2008 User's Guide SLUU331 – July 2008 Intermediate Bus Converter 300-W Evaluation Module 1 Introduction The UCC28230 evaluation module, is a 300-W intermediate bus converter, providing an unregulated


    Original     		UCC28230EVM SLUU331 UCC28230 PDF

    voltage regulator 9V to 3,3V

    Abstract: PA0184 IHLP2525CZERR10M PA18-3 flyback converter 10A 6TPE220MI 2N3906 TP0307 BAS16 LT3837
    Text: advertisement Flyback Controller Simplifies Design of Low Input Voltage DC/DC Converters – Design Note 410 David Burgoon Introduction Small, high efficiency DC/DC converters are critical to the design of leading-edge electronics. Achieving high accuracy and efficiency traditionally means adding extra


    Original     		LT3837. PA0184 FMMT718 FMMT618 Si7336ADP BAT54WS 220pF DN410 V/10A dn410f voltage regulator 9V to 3,3V PA0184 IHLP2525CZERR10M PA18-3 flyback converter 10A 6TPE220MI 2N3906 TP0307 BAS16 LT3837 PDF

    HAT2173H-EL-E

    Abstract: HAT2173H
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    76V0A

    Abstract: MCHP-045-V31-1 AN1335 48V 100w SMPS forward High-Speed PWM DS70323 buck boost converter closed loop in matlab "High-Speed PWM" DS70323 DS70296 DSC full-bridge dsPIC dsPIC33FJ16GS502
    Text: AN1335 Phase-Shifted Full-Bridge PSFB Quarter Brick DC/DC Converter Reference Design Using a dsPIC DSC Author: Ramesh Kankanala Microchip Technology Inc. ABSTRACT This application note provides the digital implementation of a telecom input 36 VDC-76 VDC to output 12 VDC,


    Original     		AN1335 VDC-76 dsPIC33F DS01335A-page 76V0A MCHP-045-V31-1 AN1335 48V 100w SMPS forward High-Speed PWM DS70323 buck boost converter closed loop in matlab "High-Speed PWM" DS70323 DS70296 DSC full-bridge dsPIC dsPIC33FJ16GS502 PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    rjk5020

    Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
    Text: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment


    Original     		HA16174 HA16158 HA16341 HA16342 HA16167 rjk5020 HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174 PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as PDF