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    HAT2096H Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    HAT2096H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 40A 5.3Mohm Lfpak Visit Renesas Electronics Corporation
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    HAT2096H Price and Stock

    Renesas Electronics Corporation HAT2096H-EL-E

    MOSFET N-CH 30V 40A LFPAK
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    Bristol Electronics HAT2096H-EL-E 4,652
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    Quest Components HAT2096H-EL-E 1,989
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    Avnet Asia HAT2096H-EL-E 18 Weeks 2,500
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    Hitachi Ltd HAT2096H-EL

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    HAT2096H Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HAT2096H Hitachi Semiconductor Silicon N Channel Power MOS FET Original PDF
    HAT2096H Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    HAT2096H Renesas Technology Silicon N-Channel MOS FET Original PDF
    HAT2096H Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 40; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.0042; RDS (ON) typ. (ohm) @4V[4.5V]: [0.007]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff ( us) typ: 0.062; Package: LFPAK Original PDF
    HAT2096H-EL-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A LFPAK Original PDF

    HAT2096H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2096H

    Abstract: HAT2096H-EL-E
    Text: HAT2096H Silicon N Channel Power MOS FET Power Switching REJ03G1186-0400 Previous: ADE-208-1431B Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 4.2 mΩ typ. (at VGS = 10 V)


    Original     		PDF HAT2096H REJ03G1186-0400 ADE-208-1431B) PTZZ0005DA-A HAT2096H HAT2096H-EL-E

    HAT2096H

    Abstract: Hitachi DSA00351
    Text: HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B Z 3rd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V) Outline


    Original     		PDF HAT2096H ADE-208-1431B D-85622 D-85619 HAT2096H Hitachi DSA00351

    ADE-208-1431A

    Abstract: 1431a Hitachi DSA0076 HAT2096H
    Text: HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431A Z 2nd Edition Jul. 2001 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ (at VGS = 10V) Outline LFPAK


    Original     		PDF HAT2096H ADE-208-1431A ADE-208-1431A 1431a Hitachi DSA0076 HAT2096H

    HAT2096H

    Abstract: HAT2096H-EL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    BIHM65-H4R0

    Abstract: LM431BIM3 C1608X7R2A561K 12AQ3
    Text: ISL6740EVAL3 Application Note Specifications -11.8 -12VO, REG/DSL 14 OUTPUTS 200kHz/300kHz -12.0 -12.2 36VI/-12VO 48VI/-12VO 60VI/-12VO 72VI/-12VO -12.4 -12.6 • Input Voltage: 36V to 72V -12.8 • Outputs: 3.3V ±1% @ 4A 1.5V ±1% @ 7A 12V +3.5%/-10% (typical) @ 1.5A


    Original     		PDF ISL6740EVAL3 AN1127 ISL6740EVAL3 ISL6740 ISL6402 36VI/-12VO 48VI/-12VO BIHM65-H4R0 LM431BIM3 C1608X7R2A561K 12AQ3

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    HAT2096H

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 HAT2096H

    PS2801-1-A

    Abstract: REG IC 48V IN 12V 10A OUT DPAK369C Vishay 470uF E 40748-LF1 31660 X7R ROHS .1uF smd cr7 HAT2116H-EL-E Midcom 7
    Text: ISL6740EVAL3Z Application Note AN1127.2 -11.8 -12VO, REG/DSL 14 OUTPUTS 200kHz/300kHz -12.0 -12.2 VOUT (V) The ISL6740EVAL3Z serves as a reference design for a 48V to ±12V, 3.3V and 1.5V isolated power supply. It utilizes an ISL6740 double-ended voltage mode controller in half bridge


    Original     		PDF ISL6740EVAL3Z AN1127 -12VO, 200kHz/300kHz) ISL6740EVAL3Z ISL6740 ISL6402 36VI/-12VO 48VI/-12VO PS2801-1-A REG IC 48V IN 12V 10A OUT DPAK369C Vishay 470uF E 40748-LF1 31660 X7R ROHS .1uF smd cr7 HAT2116H-EL-E Midcom 7

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


    Original     		PDF HA16142P/FP ADE-504-006 DO-35 DO-41 HA16142P/FP 2SJ1334 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    LFPAK package

    Abstract: HAT2064R HAT2099H HA16163 converter DC-DC SOP-8 synchronous rectification H5N2508DS HA17L431ALP HAT2058R HAT2077R
    Text: For Communication Equipment High-Efficiency DC/DC Converter Power Supplies Features and Merits Features Merits Low on-resistance Improved power supply efficiency Low Qg, low Qgd Low drive loss energy saving in standby mode High-speed switching Low switching loss


    Original     		PDF H7N1002LS/LM HAT2064R HAT2118R* HAT2116H HAT2096H HAT2099H FY12AAJ-03F FY14AAJ-03F LFPAK package HAT2064R HAT2099H HA16163 converter DC-DC SOP-8 synchronous rectification H5N2508DS HA17L431ALP HAT2058R HAT2077R

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as

    Low Capacitance MOS FET

    Abstract: Pch MOS FET HAT2068R HAT2096H Low Input Capacitance MOS FET Hitachi DSA0015 f200k
    Text: New Products Hitachi Develops LFPAK Thin Power MOS FET Package Employing Bonding-Wire-Less Construction and Enabling 20% Reduction in On-Resistance < Typical Applications > • CPU power supplies in notebook PCs, etc. • Power supplies for communication devices


    Original     		PDF HAT2096H, HAT2096H HAT2096H Low Capacitance MOS FET Pch MOS FET HAT2068R Low Input Capacitance MOS FET Hitachi DSA0015 f200k