Untitled
Abstract: No abstract text available
Text: TQM7M4022 Preliminary data sheet 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module Description: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability
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TQM7M4022
GSM850/900/DCS/PCS
GSM85el
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Untitled
Abstract: No abstract text available
Text: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)
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TPCA8063-H
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LTE filter band 40
Abstract: 885007 LTE band 40 LQW15AN1N0C00 LTE bandpass filter
Text: 885007 2436 MHz BAW Filter Applications WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points Applicable reject bands: 2.6 GHz WiMAX/LTE,
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40/Indian
LTE filter band 40
885007
LTE band 40
LQW15AN1N0C00
LTE bandpass filter
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A12 diode
Abstract: diode 0450
Text: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free
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DFN1006)
MIL-STD-750,
C/10s
IEC61000-4-2
IEC61000-4-4
5/50s)
8/20s
A12 diode
diode 0450
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Untitled
Abstract: No abstract text available
Text: TQM7M4022 Preliminary data sheet 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module Description: Package Outline: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability
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TQM7M4022
GSM850/900/DCS/PCS
GSM850
GSM900
GSM850/GSM900
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TPCA8A09-H
Abstract: No abstract text available
Text: TPCA8A09-H MOSFETs Silicon N-Channel MOS U-MOS-H/Schottky Barrier Diode TPCA8A09-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)
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TPCA8A09-H
TPCA8A09-H
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Untitled
Abstract: No abstract text available
Text: TPCC8064-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCC8064-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.)
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TPCC8064-H
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Untitled
Abstract: No abstract text available
Text: RF3160 Preliminary 2 DUAL-BAND GSM/DCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM/DCS Handsets • GPRS Compatible • Commercial and Consumer Systems • GSM, E-GSM and DCS Products 2 Product Description 2.286 + 0.051 The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input
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RF3160
RF3160
880MHz
915MHz
1710MHz
1785MHz
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Untitled
Abstract: No abstract text available
Text: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied
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RF2492
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Untitled
Abstract: No abstract text available
Text: BCM21331 SINGLE-CHIP 65-nm EDGE BASEBAND + RF + MULTIMEDIA SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost EDGE/GPRS handset design General characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband
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BCM21331
65-nm
480-Mbps
208-MHz
389-pin
21331-PB00-R
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Untitled
Abstract: No abstract text available
Text: RF3110 Preliminary 2 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM Handsets • GSM, E-GSM and DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible 2 POWER AMPLIFIERS • Portable Battery-Powered Equipment
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RF3110
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Untitled
Abstract: No abstract text available
Text: RF2681 Preliminary 4 W-CDMA LINEAR VARIABLE GAIN DRIVER AMPLIFIER Typical Applications • General Purpose Driver Amplifier Product Description The RF2681 is a linear variable gain amplifier specifically designed for PA driver applications in W-CDMA handsets.
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RF2681
RF2681
12-pin,
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TPA6204A1
Abstract: TPA6204A1DRB TPA6204A1DRBG4 TPA6204A1DRBR TPA6204A1DRBRG4 TPA6211A1 TPA2005D1
Text: TPA6204A1 www.ti.com SLOS429B − MAY 2004 − REVISED SEPTEMBER 2009 1.7-W MONO FULLY DIFFERENTIAL AUDIO POWER AMPLIFIER FEATURES D Designed for Wireless or Cellular Handsets APPLICATIONS D Ideal for Wireless Handsets D PDAs D Notebook Computers and PDAs
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TPA6204A1
SLOS429B
TPA2005D1
TPA6211
TPA6204A1
TPA6204A1DRB
TPA6204A1DRBG4
TPA6204A1DRBR
TPA6204A1DRBRG4
TPA6211A1
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MOBILE jammer GSM 1800 MHZ circuit diagram
Abstract: MOBILE jammer GSM 1800 MHZ mobile jammer circuit design gsm gsm mobile jammer jammer gsm mobile jammer circuit long range jammer gsm block diagram of wireless watt meter mobile phone jammer jammer circuit for mobile communication diagram
Text: Global Position System Low Noise Amplifier GPS, LNA, Sensitivity, Jamming, Cohabitation, TTFF This White Paper explains why an external low noise amplifier results in a better performance. Next generation mobile handsets will be equipped with GSM, WLAN, Bluetooth and GPS.
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Untitled
Abstract: No abstract text available
Text: Crystal Units NX5032SA For Mobile Communications • Features A high precision small surface-mount type crystal unit, suitable for mobile communications such as the base clock of mobile phone handsets. ●Compact and thin. 4.9 x 3.1 × 0.75 mm typ. ●Frequencies for the base clock source of a variety of mobile phones are available.
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NX5032SA
NX5032SA-12
000M-STD-CSG-1
NX5032SA
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QFN24
Abstract: WCDMA* antenna WCDMA1700 NJG1658K34
Text: NJG1658K34 DP7T ANTENNA SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1658K34 is a GaAs DP7T antenna switch IC designed for WCDMA/GSM multimode handsets. This switch can be operated by six bits control signal from 1.3V of logic high voltage. This switch features low insertion loss and low distortion. Also, the ESD
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NJG1658K34
NJG1658K34
QFN24-34
WCDMA800
WCDMA1700/1500
WCDMA2000
GSM850/900
GSM1800/1900
QFN24
WCDMA* antenna
WCDMA1700
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901M
Abstract: NJG1516KC1
Text: NJG1516KC1 SPDT SWITCH GaAs MMIC QGENERAL DESCRIPTION NJG1516KC1 is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features low loss, high isolation at high power, and exhibits wide operating frequency range from 50MHz to
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NJG1516KC1
NJG1516KC1
50MHz
FLP10-C1
36dBm
31dBm,
901M
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GRM36
Abstract: HK1005 HK1608 NJG1714KC1 mix 3001
Text: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC •GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.
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NJG1714KC1
NJG1714KC1
NJG1714KC1.
FLP10
FLP10-C1
1900MHz
GRM36
HK1005
HK1608
mix 3001
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Untitled
Abstract: No abstract text available
Text: TPA2010D1 www.ti.com SLOS417A − OCTOBER 2003 − REVISED DECEMBER 2003 2.5ĆW MONO FILTERĆFREE CLASSĆD AUDIO POWER AMPLIFIER FEATURES D Maximum Battery Life and Minimum Heat APPLICATIONS D Ideal for Wireless or Cellular Handsets and − Efficiency With an 8-Ω Speaker:
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TPA2010D1
SLOS417A
250-kHz
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMP1302 Series: Switch and Attenuator Plastic Packaged PIN Diodes Applications • TV distribution and cellular base stations • High volume switch and attenuators Features • Designed for base station and handset applications • Low-distortion design
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SMP1302
J-STD-020
200043O
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Untitled
Abstract: No abstract text available
Text: CXG1100TN High Power DPDT Switch with Logic Control Description The CXG1100TN is a high power DPDT switch MMIC. This IC can be used in wireless communi-cation systems, for example, dual-band CDMA handsets. The CXG1100TN can be operated by CMOS control. The Sony’s JFET process is used for low insertion
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CXG1100TN
CXG1100TN
900MHz
60dBm
10-pin
TSSOP-10P-L01
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RF7166
Abstract: SP4T Antenna Switch ecg4050 rf mems switch DCS1800 GSM900 JESD22-A114 HDR1X14 GSM module interface with micro controller circuit trace code decoder RFMD
Text: RF7166 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE Applications 3V Dual-Band GSM/GPRS Handsets GSM900/DCS1800 Products GPRS Class 12 Compliant Portable Battery-Powered Equipment GPCTRL0 GPCTRL1 VBATT NC 17 Power Control Circuit and Switch Decoder
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RF7166
GSM900/DCS1800
GSM900/DCS1800
GSM900
DCS1800
2002/95/EC
DS090205
RF7166
SP4T Antenna Switch
ecg4050
rf mems switch
JESD22-A114
HDR1X14
GSM module interface with micro controller circuit
trace code decoder RFMD
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rf7163
Abstract: DCS1800 EGSM900 PCS1900 RF7163QuadBand
Text: RF7163 RF7163QuadBand GSM850/EGS M900/DCS18 00/ QUAD-BAND GSM850/EGSM900/DCS1800/ PCS1900 TRANSMIT MODULE Applications 3V Quad-Band GSM/GPRS Handsets GSM850/EGSM900/DCS180 0/PCS1900 Products GPRS Class 12 Compliant Portable Battery-Powered
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RF7163
RF7163QuadBand
GSM850/EGS
M900/DCS18
GSM850/EGSM900/DCS1800/
PCS1900
GSM850/EGSM900/DCS180
0/PCS1900
GSM850
EGSM900
rf7163
DCS1800
RF7163QuadBand
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ta31087
Abstract: No abstract text available
Text: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM REGULATOR 1C FOR CORDLESS TELEPHONE 2 independent regulators and m icrocom puter pow er on a chip, very suitable fo r a handset o f cordless telephone. FEATURES • W atch-dog-tim er fun ction • 2 independent regulators
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SSOP16
TA31087FN-1
TA31087FN-5
ta31087
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