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    HAMAMATSU S8550 APD ARRAY Search Results

    HAMAMATSU S8550 APD ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    HAMAMATSU S8550 APD ARRAY Datasheets Context Search

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    Hamamatsu S8550 APD Array

    Abstract: S8550 s8550 c Photodiode Array 32 element APD Arrays diode F4 4e S8550 applications S8550 transistor SE-171 apd array
    Text: APD Si APD array S8550 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.


    Original     		PDF S8550 S8550 SE-171 KAPD1009E01 Hamamatsu S8550 APD Array s8550 c Photodiode Array 32 element APD Arrays diode F4 4e S8550 applications S8550 transistor apd array

    apd array

    Abstract: Photodiode Array 32 element S8550 applications S8550S Hamamatsu S8550 APD Array
    Text: APD Si APD array S8550 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.


    Original     		PDF S8550 S8550 SE-171 KAPD1009E01 apd array Photodiode Array 32 element S8550 applications S8550S Hamamatsu S8550 APD Array

    Si APD array

    Abstract: E4 mark Photodiode Array 32 element
    Text: APD Si APD array S8550 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.


    Original     		PDF S8550 S8550 SE-171 KAPD1009E02 Si APD array E4 mark Photodiode Array 32 element

    S8550

    Abstract: Hamamatsu S8550 APD Array apd array APD Arrays S8550 applications S8550 equivalent SE-171 Photodiode Array 32 element
    Text: APD Si APD array S8550 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.


    Original     		PDF S8550 S8550 SE-171 KAPD1009E02 Hamamatsu S8550 APD Array apd array APD Arrays S8550 applications S8550 equivalent Photodiode Array 32 element

    Untitled

    Abstract: No abstract text available
    Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain


    Original     		PDF D-82211 KAPD0001E05