256CH
Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 Photodiode array combined with signal processing IC The S8865-64/-128/-256 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit,
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S8865-64/-128/-256
S8865-64/-128/-256
C9118
S8865-256.
SE-171
KMPD1071E02
256CH
9 ELEMENT photoDIODE ARRAY
simple Photodiode
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R800-10-012-20-001
Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,
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S8865-64/-128/-256
S8866-64-02/-128-02
S8865-64/-128/-256
S8866-64-02/-128-02
C9118
SE-171
KMPD1071E04
R800-10-012-20-001
S8865-64
16 Photodiode-Array
S8865 C9118
S8865-64G
S8866-64
S8866-64G-02
S8865-128
S8865-256
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,
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S8865-64/-128/-256
S8866-64-02/-128-02
C9118
SE-171
KMPD1071E03
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process
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S11865-64/-128/-256
S11866-64-02/-128-02
S11865/S11866
S8865/S8866
B1201,
KMPD1134E04
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be
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S8865-64/-128/-256
S8866-64-02/-128-02
S8865-64/-128/-256
S8866-64-02/-128-02
C9118
KMPD1071E08
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be
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S8865-64/-128/-256
S8866-64-02/-128-02
S8865-64/-128/-256
S8866-64-02/-128-02
C9118
provid33-
SE-171
KMPD1071E07
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PDF
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S8865-256G
Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
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PDF
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photodiode 256 elements
Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
photodiode 256 elements
PHOTODIODE 4 CHANNEL ARRAY
74HC32
KMPDC0222EA
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LEMO FFA-00
Abstract: Rs422 timing diagram LEMO FFA.00 image sensor x-ray x-ray cmos image sensor charge amplifier x-ray biomedical sensor LEMO C7410 scintillator
Text: IMAGE SENSOR Flat panel sensor C7410 Acquires digital X-ray images in real time Hamamatsu now introduces a state-of-the-art X-ray imaging device, the model C7410 Flat Panel Sensor. This is a key device for digital X-ray imaging such as in non-destructive inspection and biomedical analysis, and delivers high-quality images at a TV scan rate.
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C7410
C7410
SE-171
KACC1043E02
LEMO FFA-00
Rs422 timing diagram
LEMO FFA.00
image sensor x-ray
x-ray cmos image sensor
charge amplifier x-ray
biomedical sensor
LEMO
scintillator
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifiers S11865-64G/-128G/-256G S11866-64G-02/-128G-02 Photodiode arrays combined with signal processing IC for X-ray detection The S11865/S11866 series These are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray detection. X-ray tolerance has been improved compared to the previous products S8865/S8866 series .
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S11865-64G/-128G/-256G
S11866-64G-02/-128G-02
S11865/S11866
S8865/S8866
B1201,
KMPD1135E04
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
S8866-64G-02/-128G-02
C9118
S8865-256G.
SE-171
KMPD1105E02
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray
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Original
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
C9118
S8865-256G.
SE-171
KMPD1105E01
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PDF
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s886564g
Abstract: KMPDC0072EA
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray
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Original
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
C9118
S8865-256G.
SE-171
KMPD1105E01
s886564g
KMPDC0072EA
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
S8866-64G-02/-128G-02
C9118
S8865-256G
S8866-64G-02.
SE-171
KMPD1105E05
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PDF
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
S8866-64G-02/-128G-02
C9118
S8865-256G
S8866-64G-02.
KMPD1105E06
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PDF
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Selection guide
Abstract: Infrared detectors P13243-011MA
Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
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KIRD0001E08
Selection guide
Infrared detectors
P13243-011MA
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G7233-256
Abstract: G7230-256 S7233 Hamamatsu photodiode 256 elements InGaAs photodiode array chip InGaAs PIN photodiode Long Wavelength 2.6 phct C7221 G7230-128 G7231-128
Text: InGaAs LINEAR IMAGE SENSORS G7230/G7231/G7233 SERIES HAMAMATSU PRELIMINARY DATA Oct. 1997 NIR applications 0.9 to 1.7 |jm/1.2 to 2.6 pm FEATURES • Spectral response range G7230/G7231 series: 0.9 to 1.7 pm G7233 series: 1.2 to 2.6 pm • G7231/G7233 series:
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G7230/G7231
/G7233
G7233
G7231/G7233
i49i06162-3750.
44i0181-367-3560
S-164
46I08-750-5895
KMIR1006E03
G7233-256
G7230-256
S7233
Hamamatsu photodiode 256 elements
InGaAs photodiode array chip
InGaAs PIN photodiode Long Wavelength 2.6
phct
C7221
G7230-128
G7231-128
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c1837
Abstract: ir photodiode amplifier near IR photodiodes low noise ir photodiode amplifier photodiode 1024 elements silicon S-2318 s2301 S23011 photodiode 256 elements silicon photodiode 512 elements
Text: HAMAMATSU CORP 11E D • 422^01 35,38 and 46 ELEMENT PHOTODIODE ARRAYS Hamamatsu offers new series of linear photodiode arrays designed for multichannel spectrophotometers. These photodiode arrays feature wide spectral response from ultraviolet to near infrared and low cross-talk between
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OCR Scan
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Q0G2545
S2311
S2312
S2313
C1837
C1837
S2280)
mm/250g
ir photodiode amplifier
near IR photodiodes
low noise ir photodiode amplifier
photodiode 1024 elements silicon
S-2318
s2301
S23011
photodiode 256 elements silicon
photodiode 512 elements
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C2325
Abstract: S2301-512 s2301 S23011 S2301-FX c2325 hamamatsu
Text: HAMAMATSU CORP n E D • 4a21bCH 0Da25fc,3 & ■ "J Z \\ •» HAMAMATSU TECHNICAL DATA € PCD LINEAR IMAGE SENSORS S2301-FX SERIES (FOR X-RAY DETECTION The S2301 series PCD linear image sensors are monolithic self-scanning photodiode arrays designed originally for
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4a21bCH
0Da25fc
S2301-FX
S2301
S2301,
S2304
C2325
S2301-512
S23011
c2325 hamamatsu
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PDF
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MS3904
Abstract: mos 4069
Text: HAMAMATSU SERIAL/CURRENT OUTPUT TYPE MOS LINEAR IMAGE SENSORS S3901, S3904 SERIES TEC H N IC A L DATA Wide Sensitive Area 2.5mm Photodiode Height , High UV Sensitivity, Excellent Photometric Capabilities, Low Power Consumption FEATURES • Wide photosensitive area
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OCR Scan
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S3901,
S3904
S3901)
S3904)
S3901
MS3904
mos 4069
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PDF
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S2301-512Q
Abstract: S2304-512Q S2301-512 S2304 s2301 S2301-256Q S2304-1024Q
Text: HAMAMATSU CORP 11E D HAMAMATSU TECHNICAL DATA 0QGSS51 € c € • PCD LINEAR IMAGE SENSORS S2301 SERIES t=v/-s s * 5 0 /¿ m € 1 P itc h T yp e) The S2301 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically
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OCR Scan
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0QGSS51
S2301
S2304
S2304-256Q)
S2304-512Q)
S2304-1024Q)
S2301-512Q
S2304-512Q
S2301-512
S2301-256Q
S2304-1024Q
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PDF
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st s3931
Abstract: 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp
Text: H AM A M A TSU THERM O ELECTRIC ALLY-CO OLED TECHNICAL DATA N-MOS LINEAR IMAGE SENSORS S5930, S5931 SERIES A built-in therm oelectric cooler enables highly stable m easurem ents even at very-low -light level FEATURES • Wide photosensitive area Pixel pitch: 50 n m S5930 Series , 25/* m (S5931 Series)
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OCR Scan
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S5930,
S5931
S5930
Telephone306
D-82211
33-CK9
st s3931
10sp thermistor
S3931
Peltier element
thermoelectric peltier
Silicon Photodiode DT 25
"Peltier element"
S593
L4064
10sp
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PDF
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S5463-512Q
Abstract: S5463-1024Q S5463 S5462-256Q S5464-1024Q S5461 S5462 pmx2 S5464-1024 quartz delay line
Text: C-MOS HAMAMATSU Linear Image Sensors S5461, S5462, S5463, S5464 Series Linear Image Sensors Built-in C-MOS Integration Amplifier FEATURES •B u ilt-in C-MOS integration am plifier and clamp circuit for signal readout •F a c ilita te s to configure the external signal processing circuit
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OCR Scan
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S5461,
S5462,
S5463,
S5464
S5461
S5462)
S5464)
S5463-512Q
S5463-1024Q
S5463
S5462-256Q
S5464-1024Q
S5461
S5462
pmx2
S5464-1024
quartz delay line
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