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    HAMAMATSU 256 CHANNEL PHOTODIODE Search Results

    HAMAMATSU 256 CHANNEL PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    HAMAMATSU 256 CHANNEL PHOTODIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R800-10-012-20-001

    Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
    Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,


    Original     		PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 SE-171 KMPD1071E04 R800-10-012-20-001 S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 S8865-128 S8865-256

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,


    Original     		PDF S8865-64/-128/-256 S8866-64-02/-128-02 C9118 SE-171 KMPD1071E03

    256CH

    Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
    Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 Photodiode array combined with signal processing IC The S8865-64/-128/-256 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit,


    Original     		PDF S8865-64/-128/-256 S8865-64/-128/-256 C9118 S8865-256. SE-171 KMPD1071E02 256CH 9 ELEMENT photoDIODE ARRAY simple Photodiode

    R7600U-300

    Abstract: MOST150 S11518
    Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07


    Original     		PDF G11608 G11608-256DA G11608-512DA DE128228814 R7600U-300 MOST150 S11518

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be


    Original     		PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 KMPD1071E08

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be


    Original     		PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 provid33- SE-171 KMPD1071E07

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    detector ingaas

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E09 detector ingaas

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    G9205

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 SE-171 KMIR1011E07

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process


    Original     		PDF S11865-64/-128/-256 S11866-64-02/-128-02 S11865/S11866 S8865/S8866 B1201, KMPD1134E04

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


    Original     		PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01

    S8865-256G

    Abstract: No abstract text available
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


    Original     		PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G9821 STM-16/OC-48) SE-171 KIRD1085E01

    hamamatsu 256 channel photodiode

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G9821 STM-16/OC-48) SE-171 KIRD1085E01 hamamatsu 256 channel photodiode

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G9816 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G9816 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G9816 SE-171 KIRD1084E01

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G9821 STM-16/OC-48) SE-171 KIRD1085E01

    G8194

    Abstract: G8194-21 G8194-22 G8194-23 G8194-32 InGaas PIN photodiode, 795 ,sensitivity TIA 604-10
    Text: PHOTODIODE InGaAs PIN photodiode G8194 series Receptacle type, 1.3/1.55 µm, 2 GHz G8194 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		PDF G8194 SE-171 KIRD1033E02 G8194-21 G8194-22 G8194-23 G8194-32 InGaas PIN photodiode, 795 ,sensitivity TIA 604-10

    Receptacle LC

    Abstract: pin Photodiode 2 GHz G8194 G8194-21 G8194-22 G8194-23 G8194-32 TIA 604-10 FC Receptacle pin photodiode 20 ghz
    Text: PHOTODIODE InGaAs PIN photodiode G8194 series Receptacle type, 1.3/1.55 µm, 2 GHz G8194 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		PDF G8194 SE-171 KIRD1033E04 Receptacle LC pin Photodiode 2 GHz G8194-21 G8194-22 G8194-23 G8194-32 TIA 604-10 FC Receptacle pin photodiode 20 ghz

    photodiode InGaAs NEP

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G9816 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G9816 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G9816 SE-171 KIRD1084E01 photodiode InGaAs NEP

    G10477-21

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode with preamp G10477 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G10477 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module.


    Original     		PDF G10477 SE-171 KIRD1084E02 G10477-21

    G9843

    Abstract: G9843-21 G9843-22 G9843-32 sensitivity dB photodiode pin
    Text: PHOTODIODE GaAs PIN photodiode with preamp G9843 series Receptacle type, 0.85 µm, 2.5 Gbps G9843 series is a family of high-speed receivers specifically developed for 0.85 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity GaAs PIN photodiode integrated with a high-speed preamp and integrated in a receptacle module. Packages are


    Original     		PDF G9843 SE-171 KGPD1016E02 G9843-21 G9843-22 G9843-32 sensitivity dB photodiode pin

    S8221

    Abstract: G8337
    Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8221/G8337 series Receptacle type, 0.8 µm, 1.25, 2.1 Gbps S8221/G8337 series are high-speed receivers specifically developed for 0.8 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity Si or GaAs PIN photodiode integrated with a high-speed preamp and integrated in a receptacle module.


    Original     		PDF S8221/G8337 IEEE1394 S8221 G8337 SE-171 KPIN1043E04