Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching MARKING: H9
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OT-23
OT-23
1SS344
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching MARKING: H9
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OT-23
OT-23
1SS344
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DMA366A3
Abstract: No abstract text available
Text: DMA366A3 Tentative Total pages page DMA366A3 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : H9 Package Code : SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 °C
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DMA366A3
DMA366A3
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594211
Abstract: 020C Erni 10N500
Text: 5,08 0,8 ±0,03 A A Technical Data: 6 0,1 0,8 h9 max. 17,9 +0,05 4,07 6,6 3 5,2 7,1 3 ±0,05 4,76 5,9 Insertion/withdrawel force per contact: Mechanical operations: Contact resistance inner conductor: outer conductor: Insulation resistance inner/outer conductor:
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EDO DRAM
Abstract: 32-PIN MT4LC16M4G3 MT4LC16M4H9 MT4LC16M4H9DJ-5
Text: PRELIMINARY 16 MEG x 4 EDO DRAM TECHNOLOGY, INC. MT4LC16M4G3 MT4LC16M4H9 DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3)
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MT4LC16M4G3
MT4LC16M4H9
096-cycle
32-Pin
EDO DRAM
MT4LC16M4G3
MT4LC16M4H9
MT4LC16M4H9DJ-5
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: MLX90360 Triaxis Position Sensor IC Features and Benefits Triaxis Hall Technology On Chip Signal Processing for Robust Absolute Position Sensing Simple Magnetic Design Programmable Measurement Range Programmable Linear Transfer Characteristic Multi-points or Piece-Wise-Linear
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MLX90360
TSSOP-16
ISO14001
Dec/13
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Toggle Switches
Abstract: toggle ic marking code H8 marking code 2C 2C11 marking H9
Text: TOGGLE SWITCHES TOGGLE SWITCHES SERIES 2C AGENCY APPROVALS IP67 • Sealed surface mount sub-miniature toggle switches SPECIFICATIONS In conformity with: • EN 60529: 1991 • IEC 529: 1989 CHARACTERISTICS • Supplied on Tape and Reel for automatic machine feed.
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tag h9
Abstract: E195524 1B21-N2F4V9AE 1B11-N2F4H9AE 1B3X Toggle Switches
Text: TOGGLE SWITCHES SERIES 1B AGENCY APPROVALS SPECIFICATIONS Contact Rating: S silver - 5A with resistive load @ 125 VAC or 28 VDC - 2A with resistive load @ 250 VAC A (gold) - 0.4 VA max @ 20 VAC or DC max Electrical life: 50,000 make and break cycles at full load
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E195524
15x21x4
tag h9
E195524
1B21-N2F4V9AE
1B11-N2F4H9AE
1B3X
Toggle Switches
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Untitled
Abstract: No abstract text available
Text: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • RoHS Compliant • High Self Resonance Frequencies
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1B11-NF4PCAE
Abstract: 1b11 1b1-1 E195524 1B21-NF4PCAE TAG 90 1B2X 3PDT toggle switch terminal layout
Text: TOGGLE SWITCHES SERIES 1B AGENCY APPROVALS SPECIFICATIONS Contact Rating: S silver - 5A with resistive load @ 125 VAC or 28 VDC - 2A with resistive load @ 250 VAC A (gold) - 0.4 VA max @ 20 VAC or DC max Electrical life: 50,000 make and break cycles at full load
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E195524
15x21x4
1B11-NF4PCAE
1b11
1b1-1
E195524
1B21-NF4PCAE
TAG 90
1B2X
3PDT toggle switch terminal layout
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC16M4G3/H9 16 MEG X 4 DRAM |U|IC=RON 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses G3 or 12 row-addresses, 12 column-addresses (H9)
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MT4LC16M4G3/H9
096-cycle
MT4LC16M4G3DJ-5
MT4LC16M4Q3/H9
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H9 transistor marking
Abstract: transistor h9
Text: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V
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2SA1807F5
SC-63)
A/-60
2SA1807F5
H9 transistor marking
transistor h9
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EDO DRAM
Abstract: No abstract text available
Text: PRELIMINARY M IC B Q N Î H R AM U riMIVI d o d r Âm MT4LC16M4G3 MT4LC16M4H9 FEATURES • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3)
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096-cycle
32-Pin
EDO DRAM
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Untitled
Abstract: No abstract text available
Text: ADVANCE » / li p 'p n M I MT4LC16M4G3/H9 16 MEG X 4 DRAM 16 MEG x 4 DRAM DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses G3 or
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MT4LC16M4G3/H9
096-cycle
MT4LC16M4G3DW-7
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MT4LC16M4H9
Abstract: 4lc16m
Text: ADVANCE I TtCHNOLCGV INC. 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses (G3) or 12 row-addresses, 12 column-addresses (H9)
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096-cycle
34-Pin
MT4LC16M4G3/H9
001E07D
DD15D71
MT4LC16M4H9
4lc16m
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MT4LC16M4H9
Abstract: No abstract text available
Text: PRELIMINARY 16 MEG x 4 EDO DRAM |U|IC=RaN HR AM MT4LC16M4G3 MT4LC16M4H9 FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3) • High-performance CMOS silicon-gate process
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MT4LC16M4G3
MT4LC16M4H9
096-cycle
32-Pin
NC/A12
CYCLE24
MT4LC16M4H9
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MT4LC16M4H9 1995
Abstract: MT4LC16M4H9
Text: ADVANCE DRAM 16 MEG x 4 DRAM 3.3V, EDO PAGE MODE FEATURES • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, tim ing, functions and packages • 13 row-addresses, 11 colum n-addresses G3 or 12 row-addresses, 12 colum n-addresses (H9) • High-perform ance CM OS silicon-gate process
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096-cycle
34-Pin
19REFRESH
C16M4G3/H9
MT4LC16M4G3/H9
MT4LC16M4H9 1995
MT4LC16M4H9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N I 16 MEG x 4 EDO DRAM H D A M U r iM IV I MT4LC16M4G3 MT4LC16M4H9 FEATURES PIN ASSIGNMENT Top View OPTIONS H9 G3 • Packages Plastic SOJ (400 m il) Plastic TSOP (400 mil) A3 A4 A5 DJ TG* • Timing 50ns access 60ns access 32-Pin TSOP*
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MT4LC16M4G3
MT4LC16M4H9
32-Pin
NC/A12*
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2-282836-5
Abstract: No abstract text available
Text: TH I S DRAW ING IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION RIGHTS LOC D I ST RE V I S I ONS RESERVED. D E S C R I P T I ON REVISED H9 TEST ECO-I 0 - 0 2 47 6 CR 09DEC2010 FAC . 35 7 3-282836-7 5
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28SEP2007
2-282836-5
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nichicon LOT date code
Abstract: Nichicon WEEK CODE sanelek cp 120 NICHICON DATE CODE MARKING
Text: S P E C I F I C A T I ON OF ALUMINUM ELECTROLYTIC U D sheet 1 of 21 s e r i CAPACITORS e s APPROVED 71. ¿ ¿ d L r DIG. No. H9 0 6 1 1F 1 ^ /9 ¡ J DESIGNED REV. LET. LET. CHECKED REVISIONS DATE N ICHI CON CORPORATION DR. CK. AP. sheet 2 1. SCOPE This specification covers ”U D series”chip type aluminum electrolytic
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C-5141
C-5102
nichicon LOT date code
Nichicon WEEK CODE
sanelek cp 120
NICHICON DATE CODE MARKING
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MT4LC16M4H9 1995
Abstract: 4LC16M MT4LC16M4H9
Text: ADVANCE M ir -D r n iV I I l,v " M L r . ! T MT4LC16M4G3/H9 16 MEG X 4 DRAM 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE m FEATURES PIN ASSIGNMENT Top View • Sin gle + 3 .3 V ± 0 .3 V p o w er sup p ly • Ind u stry-stan d ard x4 pin o u t, tim in g , fu nctio n s and
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MT4LC16M4G3/H9
096-cy
32-Pin
MT4LC16M4H9 1995
4LC16M
MT4LC16M4H9
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