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    H7N0603DS Search Results

    H7N0603DS Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    H7N0603DSTR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 30A 15Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    H7N0603DS Price and Stock

    Renesas Electronics Corporation H7N0603DSTRE

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop H7N0603DSTRE 6,000
    • 1 -
    • 10 $4.97
    • 100 $4.04
    • 1000 $3.61
    • 10000 $3.37
    		Buy Now

    H7N0603DS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    H7N0603DS Renesas Technology Silicon N Channel MOS FET Original PDF
    H7N0603DS Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 30; Pch : 40; RDS (ON) typ. (ohm) @10V: 0.011; RDS (ON) typ. (ohm) @4V[4.5V]: [0.016]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3200; toff ( us) typ: 0.09; Package: DPAK (S) Original PDF

    H7N0603DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H7N0603DL

    Abstract: H7N0603DS td 2003 ap A120A
    Text: H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0100Z Rev.1.00 Oct.14.2003 Features • Low on - resistance RDS on = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline DPAK-2 D DPAK-S 4 4 G 1 2 3


    Original     		PDF H7N0603DL, H7N0603DS REJ03G0123-0100Z H7N0603DL H7L0603DS H7N0603DL H7N0603DS td 2003 ap A120A

    H7N0603DL

    Abstract: H7N0603DS PRSS0004ZD-B PRSS0004ZD-C
    Text: H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.2.00 Jan.26.2005 Features • Low on - resistance RDS on = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: DPAK(L)-2)


    Original     		PDF H7N0603DL, H7N0603DS REJ03G0123-0200 PRSS0004ZD-B PRSS0004ZD-C H7N0603DL Unit2607 H7N0603DL H7N0603DS PRSS0004ZD-B PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF do-900 Unit2607

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    H7N0603DL

    Abstract: H7N0603DS PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d-900 Unit2607 H7N0603DL H7N0603DS PRSS0004ZD-B PRSS0004ZD-C