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    Renesas Electronics Corporation

    Renesas Electronics Corporation H5N1506P-E

    NCH POWER MOSFET 150V 98A 16MOHM TO-3P - Trays (Alt: H5N1506P-E)
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    Avnet Americas H5N1506P-E Tray 200
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    H5N1506P Datasheets (3)

    Part
    ECAD Model
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    Description
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    PDF
    H5N1506P Renesas Technology Transistors> Switching/MOSFETs Original PDF
    H5N1506P Renesas Technology MOSFET, Switching; VDSS (V): 150; ID (A): 98; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.014; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff ( us) typ: 0.22; Package: TO-3P Original PDF
    H5N1506P-E-E Renesas Technology MOSFET: Silicon N Channel MOSFET High Speed Power Switching Original PDF

    H5N1506P Datasheets Context Search

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    H5N1506P

    Abstract: H5N1506P-E PRSS0004ZE-A SC-65
    Text: H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.2.00 Jul 03, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate 2. Drain (Flange)


    Original     		H5N1506P REJ03G0389-0200 PRSS0004ZE-A H5N1506P H5N1506P-E PRSS0004ZE-A SC-65 PDF

    FET 4900

    Abstract: H5N1506P H5N1506P-E
    Text: H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0100Z Rev.1.00 Jul.30.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings


    Original     		H5N1506P REJ03G0389-0100Z FET 4900 H5N1506P H5N1506P-E PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    H5N1506P

    Abstract: H5N1506P-E PRSS0004ZE-A SC-65
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF