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    H5610 TRANSISTOR Search Results

    H5610 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H5610 TRANSISTOR Datasheets Context Search

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    HIT5610

    Abstract: H5610 H5610 transistor
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 HIT5610 H5610 █ 主要用途 █ 外形图及引脚排列 作音频放大。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃


    Original     		HIT5610 H5610 750mW -10AIEC -10AIE -10AIC -500mA -80mA HIT5610 H5610 H5610 transistor PDF