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    Untitled

    Abstract: No abstract text available
    Text: 3UALITY T E C H N O L O G I E S CORP S7E VMbhflSl OGOMEGfc, b ?S • Ö T V T> Optoisolator Specifications_ H11G45, H11G46 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H 11G series consists o f a gallium arsenide, infrared


    OCR Scan     		PDF H11G45, H11G46

    Untitled

    Abstract: No abstract text available
    Text: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere


    OCR Scan     		PDF GEPS2001 GEPS2001 H51868