sandisk 32GB Nand flash
Abstract: SDED7-256M-N9 MD2533-D8G-X-P X-GOLD 110 NAND flash 64gb md2533-d16g-x-p MD2534-D1G-X-P sded5-004g-ncy mdoc h3 SDED5-002G
Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk‟s successful mDOC
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92-DS-1205-10
sandisk 32GB Nand flash
SDED7-256M-N9
MD2533-D8G-X-P
X-GOLD 110
NAND flash 64gb
md2533-d16g-x-p
MD2534-D1G-X-P
sded5-004g-ncy
mdoc h3
SDED5-002G
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sandisk 32GB Nand flash
Abstract: sDED7-256M-N9Y sded7-256m-n9 X-GOLD 223 infineon x-gold MD2534-D2G-X-P SDED5-001G-NA sandisk mDOC H3 SanDisk SDED7-256M-N9 MD2534-D1G-X-P
Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, November 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC
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92-DS-1205-10
sandisk 32GB Nand flash
sDED7-256M-N9Y
sded7-256m-n9
X-GOLD 223
infineon x-gold
MD2534-D2G-X-P
SDED5-001G-NA
sandisk mDOC H3
SanDisk SDED7-256M-N9
MD2534-D1G-X-P
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sandisk 32GB Nand flash
Abstract: SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P
Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2008 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC
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92-DS-1205-10
sandisk 32GB Nand flash
SDED7-256M-N9
SDED7-256M-N9Y
MD2534-D1G-X-P
SDED5-512M-N9T
SDED7-256M-N9T
SDED5-002G-NC
sded5-004g-ncy
SanDisk SDED7-256M-N9
MD2534-D2G-X-P
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BAW56W
Abstract: marking h3
Text: SEMICONDUCTOR BAW56W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H3 1 2 Item Marking Description Device Mark H3 BAW56W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAW56W
BAW56W
marking h3
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPX-H3 1. Scope The present specifications shall apply to an SJPX-H3. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060509 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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UL94V-0
10msec.
1msect10msec
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marking h3
Abstract: No abstract text available
Text: BCW89 SMALL SIGNAL PNP TRANSISTOR • ■ ■ Type Marking BCW 89 H3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO-AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM
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BCW89
OT-23
marking h3
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
BCW89
C-120
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smd LB 012
Abstract: BCW89
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3
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OT-23
BCW89
C-120
smd LB 012
BCW89
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BCW89
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3
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OT-23
BCW89
C-120
BCW89
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3
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OT-23
BCW89
C-120
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Untitled
Abstract: No abstract text available
Text: DMA26603 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: H3 Basic Part Number
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DMA26603
UL-94
DRA2144E
DMA266030R
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0714A
Abstract: NS9L153MT-H3
Text: Nichia STS-DA1-0714A <Cat.No.090417> SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE MODEL : NS9L153MT-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-0714A <Cat.No.090417> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current
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STS-DA1-0714A
NS9L153MT-H3
10sec.
10msec.
NS9L153MT-H3
10reel
20reel
0714A
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NSSL123BT-H3
Abstract: NSSL123
Text: Nichia STS-DA1-0804A <Cat.No.090611> SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE MODEL : NSSL123BT-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-0804A <Cat.No.090611> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current
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STS-DA1-0804A
NSSL123BT-H3
10msec.
10sec.
123BT-H
15reel
30reel
NSxx123BT-Hx
NSSL123BT-H3
NSSL123
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NS2L123BT-H3
Abstract: STS-DA1-0808A NS2L123B-H3
Text: Nichia STS-DA1-0808A <Cat.No.090611> SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE MODEL : NS2L123BT-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-0808A <Cat.No.090611> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current
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STS-DA1-0808A
NS2L123BT-H3
10msec.
10sec.
123BT-H
15reel
30reel
NSxx123BT-Hx
NS2L123BT-H3
NS2L123B-H3
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Vishay diodes code marking
Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
Text: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year
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OD-323
LLP75-3A,
LLP75-3B
OD-523
DO-219AB)
OT-23
OD-123
06-May-04
DO-35
Vishay diodes code marking
marking code vishay label
VISHAY MARKING CODE
Vishay SOT23 MARKING F5
Vishay DaTE CODE
marking code vishay
MARKING CODE f5
SOD-523 DO-219AB
marking CODE n5
marking l4 sot-23
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marking h3a
Abstract: marking h3 KDV153
Text: SEMICONDUCTOR KDV153 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H3A 1 2 Item Marking Description Device Mark H3 KDV153 Grade A A, B, C, D * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDV153
OT-23
marking h3a
marking h3
KDV153
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F5 marking code
Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month
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OD-323
LLP75-3A,
LLP75-3B
OD-523
DO-219AB)
OT-23
OD-123
06-May-04
F5 marking code
MARKING CODE f5
marking code vishay label
SMF DO-219AB
Vishay diodes code marking
Vishay DaTE CODE
DO-219AB
marking L4 SOD123
SOD-523 DO-219AB
SOD-80 sod123
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F MARKING 6PIN
Abstract: No abstract text available
Text: UMH3N IMH3A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMH3N and IMH3A; H3 UMH3N (UMT6) Z.OtO.2 package contains two independent NPN digital transistors
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SC-74)
DTC143TKA)
SC-70)
SC-59)
F MARKING 6PIN
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V
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BAL74
Q62702-A718
OT-23
M0001
fl235L05
fl5BSb05
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BCW89
Abstract: BS7 marking
Text: L BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _t.02_ 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS
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BCW89
23A33T4
0D0Q773
BCW89
BS7 marking
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Untitled
Abstract: No abstract text available
Text: CDU. BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0 .14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 0.60 0.40 2.00 1.Ö0 ABSOLUTE MAXIMUM RATINGS
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BCW89
200nA;
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marking h3
Abstract: SC08810 od31
Text: F Z J S G S - T H O M S O N Ä 7 # Me^iLliOTSMIgS BCW89 SMALL SIGNAL PNP TRANSISTOR Type Marking BCW89 H3 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO-AMPLIFICATION AND
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BCW89
OT-23
SC08810
7T2TE37
OT-23
marking h3
SC08810
od31
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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OCR Scan
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BCW89
23fl33T4
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Untitled
Abstract: No abstract text available
Text: BCW89 CDU SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O .H 0.70 0.50 "11.4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 ööö+T j f S »W-05 0.12 0.02 ABSOLUTE MAXIMUM RATINGS
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BCW89
200tiA;
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