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    H2X TRANSISTOR Search Results

    H2X TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H2X TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1N4002

    Abstract: D1N4002 diode motor winding copper coil data 200B AN677 HCS410 MTP23P06V MTP50N06V MTW14N50 RG41
    Text: AN677 Designing a Base Station Coil for the HCS410 Author: Mike Sonnabend, Jan van Niekerk Microchip Technology Inc. OVERVIEW This application note describes the Excel spreadsheet to design base station coils. The spreadsheet file name is basesta.xls. A zip file containing this spreadsheet and a copy of this application note can be downloaded


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    PDF AN677 HCS410 D1N4002 D1N4002 diode motor winding copper coil data 200B AN677 HCS410 MTP23P06V MTP50N06V MTW14N50 RG41

    D1N4002

    Abstract: coil design and construction manual babani D1N4002 diode babani MTW14N50 DIODE D1N4002 1 microhenry inductor series and parallel RLC circuit datasheet coil inductor inductor coils
    Text: M AN677 Designing a Base Station Coil for the HCS410 INTRODUCTION Author: Mike Sonnabend, Jan van Niekerk Microchip Technology Inc. OVERVIEW This application note describes the Excel spreadsheet to design base station coils. The spreadsheet file name is basestaxls.


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    PDF AN677 HCS410 D1N4002 coil design and construction manual babani D1N4002 diode babani MTW14N50 DIODE D1N4002 1 microhenry inductor series and parallel RLC circuit datasheet coil inductor inductor coils

    D1N4002 diode

    Abstract: d1n4002 Royal OHM 10 ohm 1w MTW14N50 dmo2 babani
    Text: M AN677 Designing a Base Station Coil for the HCS410 INTRODUCTION Author: Mike Sonnabend, Jan van Niekerk Microchip Technology Inc. OVERVIEW This application note describes the Excel spreadsheet to design base station coils. The spreadsheet file name is basestaxls.


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    PDF AN677 125kHz 125kHz) HCS410 DS00677A-page D1N4002 diode d1n4002 Royal OHM 10 ohm 1w MTW14N50 dmo2 babani

    D1N4002

    Abstract: coil design and construction manual babani babani MTW14N50 D1N4002 diode coil eddy distance DIODE D1N4002 200B AN677 MH 9016
    Text: M AN677 Designing a Base Station Coil for the HCS410 INTRODUCTION Author: Mike Sonnabend, Jan van Niekerk Microchip Technology Inc. OVERVIEW This application note describes the Excel spreadsheet to design base station coils. The spreadsheet file name is basestaxls.


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    PDF AN677 HCS410 D-81739 D1N4002 coil design and construction manual babani babani MTW14N50 D1N4002 diode coil eddy distance DIODE D1N4002 200B AN677 MH 9016

    h2x transistor

    Abstract: No abstract text available
    Text: BCW70LT1 General Purpose Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −45 Vdc Emitter−Base Voltage VEBO −5.0 Vdc IC −100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board 1


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    PDF BCW70LT1 OT-23 O-236AB) OT-23 h2x transistor

    H2X transistor

    Abstract: BCW70LT1
    Text: BCW70LT1 General Purpose Transistors PNP Silicon w This device is available in Pb−free package s . Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or


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    PDF BCW70LT1 BCW70LT1/D H2X transistor BCW70LT1

    BCW70LT1

    Abstract: H2X transistor
    Text: BCW70LT1 General Purpose Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –100 mAdc Collector Current — Continuous COLLECTOR 3 1 BASE


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    PDF BCW70LT1 r14153 BCW70LT1/D BCW70LT1 H2X transistor

    104 k5k capacitor

    Abstract: k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx
    Text: IBM Mobile Systems ThinkPad Computer Hardware Maintenance Manual August 2004 This manual supports: ThinkPad T40/T40p, T41/T41p, T42/T42p MT 2373/2374/2375/2376/2378/2379 ThinkPad Dock II (MT 2877) Note Before using this information and the product it supports, be sure to read the general information


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    PDF T40/T40p, T41/T41p, T42/T42p T42/T42p 92P2252 104 k5k capacitor k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx

    S 9018 to-92

    Abstract: C1674K SC1674 C2786 2sc 3138 2369A to-92
    Text: NPN High Speed Saturated Switches Device No. [Mark] Case Style PN5134 VCEO V Min VCES* V VCBO EBO (V) (V) Min Min ICBO VCB (nA) @ (V) Max I V hFE @ C & CE Min Max (mA) (V) 10 20* 3.5 100 15 20 15 B SV52 [B 2] TO-236 (49) 12 20 5.0 100 10 25 40 25 MMBT2369 [1J]


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    PDF PN5134 O-236 S 9018 to-92 C1674K SC1674 C2786 2sc 3138 2369A to-92

    philips ecg master replacement guide

    Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
    Text: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW


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    PDF 32R2105RW 32R2110RW 32R2111RW 32R2112RU 32R2124RV philips ecg master replacement guide smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024

    1FK7060-5AF71-1

    Abstract: 1FK7103-5AF71 1FK7063-5AF71 1FK7042-5AF71 1FK7105-5AF71-1 1FK7022-5AK71 siemens servo motor 1fk7060 1FK7083-5AF71 1FK7032-5AK71 1FK7063-5AF71-1
    Text: Configuration Manual 12/2006 Edition 1FK7 Synchronous Motors SINAMICS S120 sinamics s Foreword Motor Description 1 SINAMICS S120 Application 2 Synchronous Motors 1FK7 Mechanical data 3 Electrical data 4 Configuration 5 Motor components 6 Technical data and


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    PDF 6SN1197-0AD16-0BP1 1FK7061-7AH71, 1FK7063-5AF71, 1FK7063-5AH71, 1FK7064-7AF71, 1FK7064-7AH71, 1FK7080-5AF71, 1FK7080-5AH71, 1FK7083-5AF71, 1FK7060-5AF71-1 1FK7103-5AF71 1FK7063-5AF71 1FK7042-5AF71 1FK7105-5AF71-1 1FK7022-5AK71 siemens servo motor 1fk7060 1FK7083-5AF71 1FK7032-5AK71 1FK7063-5AF71-1

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bGE D • DG11SS7 b3b TRANSISTORS FUNCTION GUIDE 1-3. RF/VHF/UHF Amplifier Transistors 1-3-1. SOT-23 Type Transistors Device Condition It MHz C ob VcEO <pF) NPN G pe Condition NF(dB) hFE Ia s c (dB) Vce lc (V) (mA) MIN TYP MAX (V)


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    PDF DG11SS7 OT-23 KSC2734 KSC3120 KSC2759 KST5179 KSC2757 KSC2758 KST10 KSC2756

    H2X transistor

    Abstract: h3y sot-23 transistor
    Text: SSI 32R525R 4-Channel Thin Film Read/Write Device mCMMhns Preliminary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R525R is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R525R 32R525R H2X transistor h3y sot-23 transistor

    MAGNETIC HEAD read amplifier H3X

    Abstract: h2x transistor
    Text: SSI 32R525R wmâiàms' 4-Channel Thin Film Read/Write Device < Prelim inary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R525R is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R525R 32R525R MAGNETIC HEAD read amplifier H3X h2x transistor

    5aw13

    Abstract: No abstract text available
    Text: SSI 32R526R 4-Channel Thin Film Read/Write Device Prelim inary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R526 is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R526R 32R526 5aw13

    TRANSISTOR HNY

    Abstract: MAGNETIC HEAD impedance MAGNETIC HEAD circuit MAGNETIC Write HEAD circuit magnetic head amplifier MHz transistor 5457 SSI32R526R-4F vlh-s
    Text: SSI 32R526R Mmsidans' 4-Channel Thin Film Read/Write Device Preliminary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R526 is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R526R 32R526 TRANSISTOR HNY MAGNETIC HEAD impedance MAGNETIC HEAD circuit MAGNETIC Write HEAD circuit magnetic head amplifier MHz transistor 5457 SSI32R526R-4F vlh-s

    transistor 5457

    Abstract: H2X transistor IW transistor magnetic head amplifier MHz MAGNETIC HEAD circuit MAGNETIC Write HEAD circuit MAGNETIC HEAD impedance MAGNETIC HEAD
    Text: SSI 32R525R ómmsvstm' 4-Channel Thin Film Read/Write Device Preliminary D a ta i 1 July, 1990 DESCRIPTION FEATURES The SSI 32R525R is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R525R 24-pin transistor 5457 H2X transistor IW transistor magnetic head amplifier MHz MAGNETIC HEAD circuit MAGNETIC Write HEAD circuit MAGNETIC HEAD impedance MAGNETIC HEAD

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R526R 4-Channel Thin Film Read/Write Device óuiconSustcM' Preliminary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R526 is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R526R 32R526

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R114 M&nMbtis 4-Channel Thin Film Read/Write Device Not A vailable. Please see SSI 32R520 & SSI 32R525. INNOVATORS IN/ INTEGRATION August, 1988 DESCRIPTION FEATURES The SSI 32R 114 is an integrated read/write circuit de­ signed for use with non-center tapped thin film heads


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    PDF 32R114 24-Pin 32R114 32R114-F

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R520/520R 4-Channel Thin Film Read/Write Device MCOflMknS June, 1989 FEATURES DESCRIPTION The SSI 32R520 is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls four heads and has three modes of operation: read, write,


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    PDF 32R520/520R 32R520 24-pin 24-Pln 32R520R 32R520R-F

    SS9013 SOT-23

    Abstract: KSC1330 transistor J1x SS9014 sot-23 KSC2880 M74040 KSC2884 Marking BA SOT89 KSP44 kst2222
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 1.1.1 General Purpose Transistors SOT-23 Type Transistors C ondition Device and Polarity Marking NPN KST06(1G) KST050H) KSC1623(C1X> PNP VcEO (V) lc (A) VCE lc (V) (mA) MIN 80 0.5 1 0.5 1 100 100


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    PDF OT-23 KST812M4 KST812M5 KST812M6 KST812M7 KSK211 O-92S KSK161 KSK596 KSK30 SS9013 SOT-23 KSC1330 transistor J1x SS9014 sot-23 KSC2880 M74040 KSC2884 Marking BA SOT89 KSP44 kst2222

    3600q

    Abstract: h3y sot-23 transistor
    Text: IW i o 1933 SSI 32R525R/525RM ¡monsiàms' 2 and 4-Channel Thin Film Read/Write Device A TDK Group/Company February 1993 DESCRIPTION FEATURES The SSI 32R525R/525RM is an integrated read/write circuit designed for use with non-centertapped thin film heads in disk drive systems. Each chip controls four


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    PDF 32R525R/525RM 32R525R/525RM 32R525RM 32R525R write525RM-2CL 32R525RM-2CL 32R525R-2CL 32R525R-4CL 3600q h3y sot-23 transistor

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


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    PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    D880 voltage regulator

    Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5


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    PDF OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180