H2D MARKING CODE
Abstract: H2D Marking h2d diode H2D SOT23
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
MC74HC1G08DFT1
MC74HC1G08DFT2
MC74HC1G08DTT1
H2D MARKING CODE
H2D Marking
h2d diode
H2D SOT23
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BFS17
Abstract: H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking
Text: BFS17 NPN 1GHz Medium Wideband Transistor P b Lead Pb -Free 3 COLLECTOR 3 1 1 BASE Applications: SOT-23 2 EMITTER * Mixers and oscillators in TV tuners * RF communications equipment. 2 Descreption: NPN Transistor In a Plastic SOT-23 Package. MAXIMUM RATINGS (TA = 25ºC)
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BFS17
OT-23
OT-23
26-Feb-07
BFS17
H2D SOT23
h2d transistor
MARKING 16 transistor sot23
H2D Marking
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MC74HC1G08DTT2
Abstract: H2D MARKING CODE h2d diode
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
r14525
MC74HC1G08/D
MC74HC1G08DTT2
H2D MARKING CODE
h2d diode
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A114
Abstract: A115 JESD22 MC74HC MC74HC1G08 SC-5
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC1G08
MC74HC
419As
r14525
MC74HC1G08/D
A114
A115
JESD22
SC-5
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Untitled
Abstract: No abstract text available
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
r14525
MC74HC1G08/D
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Untitled
Abstract: No abstract text available
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of multiple stages, including a
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MC74HC1G08
MC74HC
70/SC
r14525
MC74HC1G08/D
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MC74HC
Abstract: MC74HC1G08 MC74HC1G08DFT2 MC74HC1G08DFT4 MC74HC1G08DTT1 MC74HC1G08DTT3 SC88A
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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Original
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MC74HC1G08
MC74HC1G08
MC74HC
r14525
MC74HC1G08/D
MC74HC1G08DFT2
MC74HC1G08DFT4
MC74HC1G08DTT1
MC74HC1G08DTT3
SC88A
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Untitled
Abstract: No abstract text available
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
r14525
MC74HC1G08/D
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MC7474
Abstract: marking 558 sot23-5 431 SOT23-5 Marking Code m sc70-5 SC70-5 74 08
Text: MC74HC1G08 Single 2−Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
SC70-5/SC-88A/SOT-353
OT23-5/ffix
SC70-5/SC-88A/
OT-353
OT-353
MC7474
marking 558 sot23-5
431 SOT23-5
Marking Code m sc70-5
SC70-5 74 08
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TPC6504
Abstract: h2d transistor 23-T1 H2D MARKING CODE H2D Marking
Text: TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain • Low collector-emitter saturation voltage : VCE sat = 0.17 V (max) • High-speed switching
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TPC6504
TPC6504
h2d transistor
23-T1
H2D MARKING CODE
H2D Marking
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h2d transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MSB92W T1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSB92WT1 PN P Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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OCR Scan
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MSB92W
MSB92WT1
SC-70/SOT-323
7-inch/3000
OUCHTONE1-602-244-6609
MSB92WT1/D
h2d transistor
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RAID SATA controller chip
Abstract: SAS controller chip AD14 AD17 M66EN st dsa2 PRCS21 DVD RW sata circuit diagram
Text: XRS10L620 PCI-X to 2-SATA/1-PATA Host Controller DATA SHEET XRS10L620 Rev 1.00 Index 1. XRS10L620 REVISION HISTORY. 2 2. OVERVIEW . 2
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XRS10L620
XRS10L620
200/sec.
150/sec.
20sec
RAID SATA controller chip
SAS controller chip
AD14
AD17
M66EN
st dsa2
PRCS21
DVD RW sata circuit diagram
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DVD RW sata circuit diagram
Abstract: sata hot plug CIRCUIT diagram REG138
Text: XRS10L620 PCI-X to 2-SATA/1-PATA Host Controller PRELIMINARY DATA SHEET XRS10L620 Rev 0.11 Index 1. XRS10L620 REVISION HISTORY. 2 2. OVERVIEW . 2
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XRS10L620
XRS10L620
200/sec.
150/sec.
20sec
70sec.
DVD RW sata circuit diagram
sata hot plug CIRCUIT diagram
REG138
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MSB92WT1
Abstract: SMD310 h2d transistor
Text: MOTOROLA Order this document by MSB92WT1/D SEMICONDUCTOR TECHNICAL DATA MSB92WT1 Preliminary Information PNP Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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MSB92WT1/D
MSB92WT1
SC-70/SOT-323
7-inch/3000
MSB92WT1
SMD310
h2d transistor
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MSB92WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSB92WT1/D SEMICONDUCTOR TECHNICAL DATA MSB92WT1 Preliminary Information PNP Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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MSB92WT1/D
MSB92WT1
SC-70/SOT-323
7-inch/3000
MSB92WT1
SMD310
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431 marking sot23-5
Abstract: No abstract text available
Text: MC74HC1G08 Single 2−Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
SC70-5/SC-88A/SOT-353
MC74HC1G08/D
431 marking sot23-5
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SOt23-5 footprint wave soldering
Abstract: sc70-5 T1 A114 A115 JESD22 MC74HC MC74HC1G08
Text: MC74HC1G08 Single 2−Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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Original
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MC74HC1G08
MC74HC1G08
MC74HC
SC70-5/SC-88A/SOT-353
MC74HC1G08/D
SOt23-5 footprint wave soldering
sc70-5 T1
A114
A115
JESD22
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
H2D MARKING CODE
marking code V6 DIODE
V = Device Code
H2D Marking
diode Marking code v3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74HC1G08/D Product Preview M C74HC1G08 2 -In p u t AND G ate The MC74HC1G08 is a high speed CMOS 2 -in p u t AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low
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OCR Scan
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C74HC1G08/D
C74HC1G08
MC74HC1G08
19A-01
MC74HC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74HC1G08/D Product Preview M C74HC1G08 2 -In p u t AND G ate The MC74HC1G08 is a high speed CMOS 2 -in p u t AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low
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OCR Scan
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C74HC1G08/D
C74HC1G08
MC74HC1G08
19A-01
MC74HC
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SMD TRANSISTOR H2A NPN
Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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NCP1937
Abstract: NTC thermistor circuit diagram TTC03 PFC inductor TTC-03
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
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NCP1937
NCP1937/D
NTC thermistor circuit diagram
TTC03
PFC inductor
TTC-03
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NCP1937
Abstract: No abstract text available
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW
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NCP1937
751BS
NCP1937xxG
NCP1937/D
NCP1937
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NCP1937
Abstract: No abstract text available
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
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NCP1937
NCP1937/D
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