KAI-1003M
Abstract: KAI-1003 transistor H1A transistor model h1a kek-4h0062-kai-1003 KAI-1003-ABA-CD-B2 Kodak PS-1197 tcd storage gate ccd
Text: DEVICE PERFORMANCE SPECIFICATION Revision 6.0 MTD/PS-0601 July 19, 2010 KODAK KAI-1003 IMAGE SENSOR 1024 H X 1024 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0601
KAI-1003
MTD/PS-1197
MTD/PS-0601
KAI-1003M
transistor H1A
transistor model h1a
kek-4h0062-kai-1003
KAI-1003-ABA-CD-B2 Kodak
PS-1197
tcd storage gate ccd
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A608 transistor pnp
Abstract: transistor A608 A608 A608 transistor bta608 pnp transistor a608 BTA608A3 bta60 C306A BTA6
Text: Spec. No. : C306A3-S Issued Date : 2005.09.29 Revised Date : Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA608A3 Features • The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification.
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C306A3-S
BTA608A3
BTA608A3
BTC536A3
UL94V-0
A608 transistor pnp
transistor A608
A608
A608 transistor
bta608
pnp transistor a608
bta60
C306A
BTA6
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C945 pin spec
Abstract: TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet
Text: CYStech Electronics Corp. Spec. No. : C204A3 Issued Date : 2003.04.01 Revised Date : 2005.01.03 Page No. : 1 / 5 General Purpose NPN Epitaxial Planar Transistor BTC945A3 Description • The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.
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C204A3
BTC945A3
BTC945A3
BTA733A3.
UL94V-0
C945 pin spec
TRANSISTOR c945 p
C945 TO92
transistor npn c945
transistor c945
c945 w 53
C945 NPN transistor
c945 P
c945 transistor
transistor c945 datasheet
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n6718
Abstract: NPN transistor ECB TO-92 IC350 IC35 H2A transistor
Text: Spec. No. : C823A3 Issued Date : 2006.10.16 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTN6718A3 Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features
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C823A3
BTN6718A3
BTN6718A3
UL94V-0
n6718
NPN transistor ECB TO-92
IC350
IC35
H2A transistor
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NH10
Abstract: BTNH10A3
Text: Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date :2006.08.16 Page No. : 1/5 CYStech Electronics Corp. VHF/UHF NPN Epitaxial Planar Transistor BTNH10A3 Description The BTNH10A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
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C201A3-H
BTNH10A3
BTNH10A3
UL94V-0
NH10
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a733 transistor
Abstract: A7333 A733 P C306A Transistor a733 BTA733A3 A733 BTC945A3
Text: Spec. No. : C306A3 Issued Date : 2003.07.14 Revised Date : 2005.01.03 Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description • The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.
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C306A3
BTA733A3
BTA733A3
BTC945A3.
UL94V-0
a733 transistor
A7333
A733 P
C306A
Transistor a733
A733
BTC945A3
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transistor h2a
Abstract: diode marking H2 H2N5089
Text: HI-SINCERITY Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE6273
H2N5089
183oC
217oC
260oC
transistor h2a
diode marking H2
H2N5089
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HMPSH10
Abstract: HA2001
Text: HI-SINCERITY Spec. No. : HA200105 Issued Date : 2000.11.01 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
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HA200105
HMPSH10
HMPSH10
Dissipati60
183oC
217oC
260oC
HA2001
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transistor h2a
Abstract: HSB564A
Text: HI-SINCERITY Spec. No. : HE6519 Issued Date : 1993.01.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB564A is designed for general purpose low frequency power amplifier applications.
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HE6519
HSB564A
HSB564A
183oC
217oC
260oC
transistor h2a
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HBF422
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6404 Issued Date : 1993.03.18 Revised Date : 2004.06.18 Page No. : 1/4 MICROELECTRONICS CORP. HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures
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HE6404
HBF422
183oC
217oC
240oC
260oC
HBF422
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transistor h2a
Abstract: diode marking H2 vbe 10v, vce 500v NPN Transistor HTL145 HE645
Text: HI-SINCERITY Spec. No. : HE6454 Issued Date : 1993.02.24 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HTL145 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTL145 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.
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HE6454
HTL145
HTL145
183oC
217oC
260oC
transistor h2a
diode marking H2
vbe 10v, vce 500v NPN Transistor
HE645
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c351a
Abstract: N4401 DTC114 DTA114EA3 DTC114E DTC114EA3
Text: Spec. No. : C351A3 Issued Date : 2003.08.20 Revised Date :2003.09.29 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors Built-in Resistors DTC114EA3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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C351A3
DTC114EA3
DTA114EA3
Colle50
c351a
N4401
DTC114
DTA114EA3
DTC114E
DTC114EA3
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OC 140 germanium transistor
Abstract: HSD879 Germanium Transistor transistor h2a
Text: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor
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HA200207
HSD879
183oC
217oC
260oC
OC 140 germanium transistor
HSD879
Germanium Transistor
transistor h2a
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700 H2A
Abstract: HE9018
Text: HI-SINCERITY Spec. No. : HE6120 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HE9018 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner.
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HE6120
HE9018
HE9018
183oC
217oC
260oC
700 H2A
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HSC1815
Abstract: diode marking H2
Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
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HE6523
HSC1815
HSC1815
150oC
200oC
183oC
217oC
260oC
245oC
10sec
diode marking H2
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HE8550
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6114 Issued Date : 1992.09.30 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull
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HE6114
HE8550
HE8550
150oC
200oC
183oC
217oC
260oC
245oC
10sec
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SD965
Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
Text: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings
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HE6537
HSD965
HSD965
183oC
217oC
260oC
SD965
equivalent transistor HSD965
HSD965 PIN
he6537
transistor HSD965
HE6537 data sheet
PT10M
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
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HE6523
HSC1815
HSC1815
183oC
217oC
260oC
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6527 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. TO-92 Absolute Maximum Ratings
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HE6527
HSC2228Y
HSC2228Y
183oC
217oC
260oC
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.
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HE6267
H2N3417
H2N3417
183oC
217oC
260oC
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ht-666
Abstract: transistor h2a HT666 HE6464
Text: HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.
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HE6464
HT666
HT666
183oC
217oC
260oC
ht-666
transistor h2a
HE6464
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE6232
H2N6426
183oC
217oC
260oC
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4126 is designed for general purpose switching and amplifier applications. TO-92
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HE6216
H2N4126
H2N4126
H2N4124
625mW
183oC
217oC
260oC
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transistor h2a
Abstract: HMPSA56 H2A transistor HE631
Text: HI-SINCERITY Spec. No. : HE6311 Issued Date : 1992.09.09 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSA56 PNP SILICON TRANSISTOR Description Amplifier transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C
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HE6311
HMPSA56
183oC
217oC
260oC
transistor h2a
HMPSA56
H2A transistor
HE631
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