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    H20 MOSFET Search Results

    H20 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H20 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    in5231

    Abstract: driver piezo print heads inkjet print head interface ic a 2231 piezo print head inkjet print head driver HV507 IN4002 voltage direction piezo head of inkjet IN5245
    Text: AN-H20 Application Note HVCMOS Drivers for Non-Impact Printing This article discusses the use of monolithic high voltage ICs for non-impact printing and plotting applications. Supertex’s HVCMOS process technology allows combining low voltage logic as well as high voltage DMOS outputs up to 400V on


    Original     		PDF AN-H20 in5231 driver piezo print heads inkjet print head interface ic a 2231 piezo print head inkjet print head driver HV507 IN4002 voltage direction piezo head of inkjet IN5245

    IR BOOST CHARGER BM 125

    Abstract: FCM2012V-121RC10-0805 W83L517 SiS301 R5460 d38aa u3843 STAC97 G731 MF3 IC D41
    Text: B A 3 1 1 H26 HOLEC217D67BC67 H25 HOLEC217D67BC67 H9 HOLEC217D67BC67 H11 HOLEC217D67BC67 H10 HOLEC256D106 1 9 8 7 6 H17 HOLES256X325D106 2 9 3 8 4 7 5 6 H22 HOLES256X325D106 2 9 3 8 4 7 5 6 1 H12 HOLEC335D185 C H2 HOLEC256D106 2 3 4 5 1 H20 HOLES256X325D106


    Original     		PDF SIS650-1 SIS650-2 SIS650-3 SIS650-4 SIS962-1 SIS962-2 SIS962-3 SIS962-4 PC87591 SIS301 IR BOOST CHARGER BM 125 FCM2012V-121RC10-0805 W83L517 R5460 d38aa u3843 STAC97 G731 MF3 IC D41

    KK0G733011020

    Abstract: DC-533 MOSFET B20 p03 G733 W83L950 l7912 GP57 diode DB3 C531 xa1720 UV111
    Text: B 1 D 1 1 9 8 7 6 1 EMI H12 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 H13 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 9 8 7 6 H15 HOLEC256D106P2-V8 2 3 4 5 H23 SMD157X98 1 H20 HOLEC256D106P2 1 H8 HOLEC334D184P2 1 H14 HOLEC256D106P2-V8 2 3 4 5 1 1 1 H7 HOLEC334D184P2 1 H5


    Original     		PDF SIS650-1 SIS650-2 SIS650-3 SIS650-4 SIS962-1 SIS962-2 SIS962-3 SIS962-4 PC87591 SIS301 KK0G733011020 DC-533 MOSFET B20 p03 G733 W83L950 l7912 GP57 diode DB3 C531 xa1720 UV111

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


    Original     		PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    h06 diode

    Abstract: DN-H06 HV9931 dimmer chokes power control circuit 220vdc ES1J DIODE ES1J SCHEMATIC dimmer mov-10 d2 diode series
    Text: DN-H06 14W Off-line LED Driver, 120VAC, PFC, 14V, 1.0A Load Specifications Parameter Value AC line voltage 100 - 135VAC LED string voltage 0 - 14V LED current 1.0A Switching frequency 70 - 120kHz Design Note The input line current features low harmonic distortion, satisfying the requirements of EN 61000-3-2 Class C (Lighting


    Original     		PDF DN-H06 120VAC, 135VAC 120kHz 135VAC. 100VAC. AN-H52 h06 diode DN-H06 HV9931 dimmer chokes power control circuit 220vdc ES1J DIODE ES1J SCHEMATIC dimmer mov-10 d2 diode series

    2n7226

    Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


    Original     		PDF MIL-PRF-19500/592C MIL-S-19500/592B 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, 2N7228U 2n7226 transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228

    IRFG1Z0

    Abstract: irfh25 irfg9110 IRFH150
    Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15


    OCR Scan     		PDF O-258 IRFV360 IRFV460 O-258 IRFH150 IRFH250 IRFH350 IRFH450 O-210AC IRFG110 IRFG1Z0 irfh25 irfg9110

    6786U

    Abstract: 6802U 6800U 6792U
    Text: Government and Space Products International Rectifier IQ R *D Part Number i = 2 5 ° c ^DS(on Bvdss (A) (V) r ^ ir c (A) h @ T r = 25°C W Fox on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC JA N TX 2N 6796U 100 JA N TX2N 6798U


    OCR Scan     		PDF 6796U 6798U 6800U 6802U 6782U 6784U 6786U 6788U 6790U 6792U

    h20 smd

    Abstract: No abstract text available
    Text: International I« R Rectifier •o Part Number ¿2 Government and Space Products Tf=25°C W RDS on bVDSS (V) Tf=100°C (A) Pd @ T r= 2 5 °C (W) a Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC N-Channel IR F E 0 2 4 60


    OCR Scan     		PDF IRFE130 JRFE330 1RFE420 JANTX2N6794L' O-254AA O-257AA 0036AB O-258AA O-259AA h20 smd

    Untitled

    Abstract: No abstract text available
    Text: Internationa I Iô R Rectifier Government and Space Products Id Part Number VDSS RoSfon ffi T C=25°C M W ^ pd T ^ IO O ’C Total “ ose Rating W RBds Si) @ Tr = 25°C W Number HEXFET ® Power MOSFETs f ose Demand Outline Key Radiation Hardened LCC N-Channel


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220


    OCR Scan     		PDF E9220 1RFE9230 JANTX2N6845U JANTX2N6847U JANTXV2N6845U JANTXV2N6847U JANTXV2N6849U O-254AA O-257AA M0-036AB

    8279-5

    Abstract: 27101 IRFK3DC50 IRFK3F450 82790
    Text: International IQR Rectifier N T Ç i i N À » I C :tu t,fc HEXFET Power MOSFETs / .S N - S p c Kj « * ’ 1 '12 •o V BR DSS >D Re Drain-to-Source ^DS(on) Pulse Continuous Po Breakdown On-State Drain Current Drain Current Max. Thermal Max. Power Part


    OCR Scan     		PDF 3F450 IRFK2D054 IRFK2F054 IRFK2DC50 IRFK2FC50 IRFK3DC50 IRFK2DE50 IRFK2FE50 8279-5 27101 IRFK3F450 82790

    JANSR2N7261

    Abstract: No abstract text available
    Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 JANSR2N7261

    RFD8P05SM

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI


    OCR Scan     		PDF 4302E71 PCF8P05W MII-Std-750, RFD8P05 RFD8P05SM RFP8P05 PCF8P05D 1-800-4-HARRIS

    transistor N43

    Abstract: harris 34
    Text: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni


    OCR Scan     		PDF PCF420W Mil-Std-750, IRF820 IRFF420 IRFU420 PCF420W PCF420D 1-800-4-HARRIS transistor N43 harris 34

    rfd3055rle

    Abstract: RFD3055RLESM
    Text: H A RR IS SEIIICOND SECT OR bflE D • 430 2 27 1 DDSlDHfl S'il ■ HAS PCF12N06RLEW PCF12N06RLED H A R R IS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Die Features • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon


    OCR Scan     		PDF PCF12N06RLEW PCF12N06RLED MII-Std-750, RFD12N06RLE RFD12N06RLESM RFD3055RLE RFD3055RLESM RFP12N06RLE RFP3055RLE

    h20 mosfet

    Abstract: PCF25N05D fusee
    Text: HARRIS SEHICOND SECTOR S bflE D • 4302271 0051150 StS ■ HAS PCF25N05W PCF25N05D h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF PCF25N05W PCF25N05D Mil-Std-750, RFD16N05 RFP25N05 RFP25N06 BUZ11 PCF25N05D 1-800-4-HARRIS h20 mosfet fusee

    HARRIS IRFD110

    Abstract: IRF510
    Text: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI


    OCR Scan     		PDF 430EB71 PCF110W ry1993 Mll-Std-750, IRF510 IRFD110 IRFU110 IRFF110 2N6782 PCF110W HARRIS IRFD110 IRF510

    PCF14N

    Abstract: RFD10N05SM RFD10N05
    Text: HARRI S SEUI COND SECTOR LflE D • M30BB71 OOSl l Ofl ■ HAS PCF14N05W P^^F14NI05[^ h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • Tbfl Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF M30BB71 PCF14N05W F14NI05[ Mil-Std-750, RFD10N05 RFD10N05SM RFP14N05 PCF14N05D 1-800-4-HARRIS PCF14N RFD10N05

    IRF630 HARRIS

    Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
    Text: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF M30E271 PCF230W Mil-Std-750, IRF630 BUZ30 IRF230 2N6758 IRFF230 2N6798 PCF230W IRF630 HARRIS Transistor irf230 5A/IRF630 HARRIS

    Untitled

    Abstract: No abstract text available
    Text: H A RR IS S E M I C O N D SECT OR bflE 5 • Œ\ h a r r i s \M J 430 2 27 1 □ 0 5 1 DÛ 4 .7T4 ■ HAS PCF15N06LW PCF15N06LD S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum


    OCR Scan     		PDF PCF15N06LW PCF15N06LD ry1993 MII-Std-750, RFM15N06L RFP15N06L PCF15N06LD 1-800-4-HARRIS

    rfp12n10

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF 00S11G0 PCF12N10W jF12N1 Mil-Std-750, IRF120 IRF520 IRFR120 IRFF120 RFM12N10 RFP12N10 rfp12n10