A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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PDF
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FL024N
Abstract: FL024
Text: AUIRFL024N AUTOMOTIVE GRADE HEXFET Power MOSFET Features • • • • • • • • • D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRFL024N
FL024N
FL024
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRFL014N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRFL014N
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PDF
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ll024n
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRLL024N HEXFET Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRLL024N
ll024n
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PDF
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smd marking H1A
Abstract: smd H1A h1a smd AUIRLL024N
Text: PD-96387A AUTOMOTIVE GRADE AUIRLL024N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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PD-96387A
AUIRLL024N
smd marking H1A
smd H1A
h1a smd
AUIRLL024N
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-96387A AUTOMOTIVE GRADE AUIRLL024N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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PD-96387A
AUIRLL024N
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97695 AUIRFL024N Features HEXFET Power MOSFET • • • • • • • Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant
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AUIRFL024N
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smd H1A
Abstract: smd marking H1A h1a smd IRS 740 h1A marking sot AUIRFL024N smd diode h1a SOT 23 H1A
Text: PD - 97695A AUIRFL024N Features HEXFET Power MOSFET • • • • • • • Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant
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7695A
AUIRFL024N
smd H1A
smd marking H1A
h1a smd
IRS 740
h1A marking sot
AUIRFL024N
smd diode h1a
SOT 23 H1A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-96382A AUTOMOTIVE GRADE AUIRFL014N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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PD-96382A
AUIRFL014N
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SMD M1A
Abstract: h1a smd smd marking H1A smd H1A m1a smd AUIRFL014N
Text: PD-96382A AUTOMOTIVE GRADE AUIRFL014N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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Original
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PD-96382A
AUIRFL014N
SMD M1A
h1a smd
smd marking H1A
smd H1A
m1a smd
AUIRFL014N
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97695A AUIRFL024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant
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7695A
AUIRFL024N
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PDF
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Ericsson TSR 491 628
Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
Text: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.
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Tsi620TM
80D7000
Tsi620,
Tsi620
Ericsson TSR 491 628
NT 1307c
ericsson TSR 491 641
Ericsson
nokia 1600 schematic diagram
schematic diagram UPS active power 600
schematic diagram UPS 600 Power free
marking code H02
schematic diagram UPS active power 400
tsi620-10gclv
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PDF
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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OCR Scan
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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PDF
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