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    H11F1 300 Price and Stock

    onsemi H11F1300

    OPTOISOLTR 5.3KV PHOTO FET 6-DIP
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    onsemi H11F1300W

    OPTOISOLTR 5.3KV PHOTO FET 6-DIP
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    H11F1 300 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11F1300 Fairchild Semiconductor Optocoupler, 6-Pin DIP Bilateral Analog FET Output Optocoupler Original PDF
    H11F1300W Fairchild Semiconductor Optocoupler, 6-Pin DIP Bilateral Analog FET Output Optocoupler Original PDF

    H11F1 300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR R46

    Abstract: H11F1
    Text: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The


    Original     		PDF H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 TRANSISTOR R46 H11F1

    H11F1

    Abstract: H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
    Text: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The


    Original     		PDF H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 H11F1 H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46

    H11F1

    Abstract: H11F3 E91231 H11F H11F2 H11F1X R46Note
    Text: H11F1X, H11F2X, H11F3X H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The H11F_ series are optically coupled isolators


    Original     		PDF H11F1X, H11F2X, H11F3X H11F1, H11F2, H11F3 E91231 DB91018-AAS/A2 H11F1 H11F3 E91231 H11F H11F2 H11F1X R46Note

    H11F1

    Abstract: H11F3 H11F2
    Text: Optoelectronics Products Bilateral Analog FET Output; DC Sensing Input RDS Ω VBR(V) I46(nA) tON/tOFF(µs) ON Max OFF Min Min Max Max VISOACRMS (kV) 1 minute H11F1 200 300M 30 50 25/25 5.3 H11F2 330 300M 30 50 25/25 5.3 H11F3 470 300M 15 50 25/25 5.3 Part Number


    Original     		PDF H11F1 H11F2 H11F3 H11F1 H11F3 H11F2

    h11f1 application

    Abstract: H11F1 40 FET Analog Devices
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		PDF H11F1 H11F2 H11F3 \TEMP\H11F2300 17-Aug-2007 H11F2 H11F2300 H11F2300W H11F23S h11f1 application 40 FET Analog Devices

    H11f1 variable resistor 500k

    Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		PDF H11F1 H11F2 H11F3 H11f1 variable resistor 500k variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F 5v 10mA reed relay data sheet book h11f1 pin

    H11F1

    Abstract: H11f1 variable resistor 500k H74A1 H11F H11F2 H11F3 bv46
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		PDF H11F1 H11F2 H11F3 H11f1 variable resistor 500k H74A1 H11F H11F3 bv46

    H11f1 variable resistor 500k

    Abstract: H11F1 300 H11F1300W h11f1 application H11F1
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		PDF H11F1 H11F2 H11F3 E90700, P01101067 H11F1300 H11F1300W H11F13S H11F13SD H11f1 variable resistor 500k H11F1 300 h11f1 application

    H11F3

    Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		PDF H11F1 H11F2 H11F3 P01101067 H11F3 H11F3300 H11F3300W H11F33S H11F33SD H11F3S H11f1 variable resistor 500k an 7511 500k variable resistor

    Untitled

    Abstract: No abstract text available
    Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers


    Original     		PDF H11F1, H11F2, H11F3 H11F1 H11F2 H11F3 50ohm,

    Untitled

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		PDF H11F1, H11F2, H11F3 H11F1 H11F2 50ohm,

    Untitled

    Abstract: No abstract text available
    Text: Schematics and Specifications 6-Pin Package Photo SCR Output; DC Threshold Sensing Input ANODE 1 6 GATE CATHODE 2 5 ANODE NC 3 IFT* mA max VTM (V) max VDRM (V) min IDM (µA) max IH (mA) max VISO ACRMS (kV) 1 minute 4N39 14 1.3 200 50 1.0 5.3 4N40 14 1.3


    Original     		PDF H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 H11F1 H11F2 H11F3

    ST206D

    Abstract: H11F H11F1 15v reed relay low cost H11F2 H11F3
    Text: Eü PHOTO FET OPTOCOUPLERS OPTO E L E C T R O N I C S H11F1 H11F2 H11F3 PACKAGE DIMENSIONS DESCRIPTION The H11F series has a gallium-alumirtum-arsenide infrared emitting diode coupled to a symmetrica! bilateral silicon photodetector. The detector is electrically isolated


    OCR Scan     		PDF H11F1 H11F2 H11F3 ST1603 100flto. 300Mn ST2062 ST2G63 ST206D H11F 15v reed relay low cost

    H11F2 equivalent

    Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
    Text: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated


    OCR Scan     		PDF H11F1 H11F2 H11F3 ST1603A 100FINE ST2062 ST2063 H11F2 equivalent C4615 H11F bv46 8T20 H11F3 R200A HIIFI

    H11F11

    Abstract: H11FS vy 5 fet
    Text: EU PHOTO FET OPTOCOüPtERS m m tm a m cs H11F1 H11F2H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon pbotodetector. The detector is electrically isolated from the input and performs like an idea? isolated FET


    OCR Scan     		PDF H11F1 H11F2H11F3 ST2062 H11F11 ST2063 H11FS vy 5 fet

    Untitled

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H l l F fam ily consists o f a g allium -alum inum -arsenide in frared em itting d io d e co u pled to a sym m etrical bilateral silicon p h o to d etecto r.


    OCR Scan     		PDF H11F1, H11F2, H11F3 H11F1

    11F2

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.


    OCR Scan     		PDF H11F1, H11F2, H11F3 11F2

    H11F1 HARRIS

    Abstract: No abstract text available
    Text: 38 75 081 G E S O L I D ST A T E 01E 19728 Optoelectronic Specifications_ HA RR IS S E M I C O N D S E C T O R 37E D H11F1, H11F2, I 4 3 Ü2 27 1 O G S T n O IHAS b H11F3 Photon Coupled Bilateral Analog FET The GE Solid State H11F family consists of a gallium arsenide infrared emitting


    OCR Scan     		PDF H11F1, H11F2, H11F3 92CS-42662 92CS-429S1 H11F1 HARRIS

    LM 8105

    Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
    Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17


    OCR Scan     		PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6001 740L6010 LM 8105 SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t

    H11F1

    Abstract: H11K1
    Text: _ TH OM S O N / D I S T R I B U T O R SñE D • T05t.fl73 0 D D 5 7 S 1 23b ■ TCSK Optoelectronic Products Optoisolators/Optocouplers Typ«# H11A10 Continued Surge Isolation C urrent Transfer Ratio Min Voltage V)0 (RMS) D escription Programmable


    OCR Scan     		PDF 0DD57S1 H11A10 H11AA1 H11AA2 H11AA3 H11AA4 CNY35 H11F1 H11F2 H11K1

    IL300G

    Abstract: TLP250 HCPL316J HCPL-316J il300-g TLP251 HCPL3120 IL300 H11F1 HCPL7800
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics jen\ 495 739-09-95, 644-41-29 npO H M e O nTpO Hbl Kofl: TLP251 0,1 A TLP250 HCPL316J @ 1 pe ak m 0,3 IGBT c p e flH e M IGBT 6 onbw oM m o w ,h o c tm IGBT 6 onbw oM m o w ,h o c tm m k c , m o w ,h o c t m


    OCR Scan     		PDF TLP251 TLP250 HCPL3120 HCPL316J IL300 IL300G H11F1 HCPL7800 Qm/300 IL300G TLP250 HCPL316J HCPL-316J il300-g TLP251 HCPL3120 H11F1 HCPL7800

    Untitled

    Abstract: No abstract text available
    Text: ISOCOM LTD Optolink OPTOCOUPLERS SCHMITT TRIGGER Single Channel DIP, Microprocessor Compatible Schmitt Trigger T- O n Threshold Current Insulation Continuous P!V LED O IO m A Rl - 270 0 Breakdown Forward Current M IN O v Voltage V c c _ 5V M A X (m A ) VCRMS)


    OCR Scan     		PDF -270Q H11L2 PT609 ICFt2502 ICPL2530 ICPL2S31 ICPL2533 6N136 44019l

    H11F1

    Abstract: No abstract text available
    Text: IS OC On C O M P O N E N T S LTD 4SE » • 4ûflb510 G D 0 0 2 3 3 7 « I S O High Isolation Opto-Couplers Single Channel, Transistors Output, w ithout Base Connection Part Number IS205 IS206 Current T ransfer Ratio If 10mA M iN <%i Features V D C C ontinuous


    OCR Scan     		PDF flb510 IS205 IS206 ISTS823A ISTS824A ISTS832S ISTS832SD ISTS870A/B ISTS871A/B ISTS875A/B H11F1

    CNY17 III

    Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
    Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196


    OCR Scan     		PDF IN6264 IN6265 IN6266 4N25A 4N29A 4N32A 4N38A BPW36 BPW37 BPW38 CNY17 III H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47